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1. 发明申请

US20090302316A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20090302316A1
公开(公告)日：2009-12-10
申请号：US12464920
申请日：2009-05-13
申请人： Woo-Geun LEE , Jae-Hyoung YOUN , Ki-Won KIM , Young-Wook LEE , Jong-In KIM
发明人： Woo-Geun LEE , Jae-Hyoung YOUN , Ki-Won KIM , Young-Wook LEE , Jong-In KIM
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78696
摘要： A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.
摘要翻译：薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，包括栅极电极，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体，形成在半导体上的数据线，包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极，其中薄膜晶体管的沟道覆盖两个侧表面的栅电极。

2. 发明申请

US20110193076A1 THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF 有权
标题翻译：薄膜晶体管面板及其制作方法
公开(公告)号：US20110193076A1
公开(公告)日：2011-08-11
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
发明人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

3. 发明申请

US20100032664A1 THIN FILM TRANSISTOR SUBSTRATE AND A FABRICATING METHOD THEREOF 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20100032664A1
公开(公告)日：2010-02-11
申请号：US12502653
申请日：2009-07-14
申请人： Young-Wook LEE , Hong-Suk YOO , Jean-Ho SONG , Jae-Hyoung YOUN , Jong-In KIM
发明人： Young-Wook LEE , Hong-Suk YOO , Jean-Ho SONG , Jae-Hyoung YOUN , Jong-In KIM
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern.
摘要翻译：氧化物半导体薄膜晶体管基板包括栅极线和设置在绝缘基板上的栅电极，邻近栅电极设置的氧化物半导体图案，与栅极线电绝缘的数据线，数据线和限定线显示区域，暴露数据线的表面的第一开口，暴露氧化物半导体图案的表面的第二开口和设置在第一开口上的漏电极和漏电极焊盘，漏电极从第一开口延伸到第二开口并电连接漏电极焊盘和氧化物半导体图案。

4. 发明申请

US20110168997A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20110168997A1
公开(公告)日：2011-07-14
申请号：US13006591
申请日：2011-01-14
申请人： Young-Wook LEE , Woo-Geun LEE , Ki-Won KIM , Hyun-Jung LEE , Ji-Soo OH
发明人： Young-Wook LEE , Woo-Geun LEE , Ki-Won KIM , Hyun-Jung LEE , Ji-Soo OH
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/124 , H01L21/76834 , H01L27/1225 , H01L27/1255 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/7869 , H01L29/78693
摘要： A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.
摘要翻译：提供薄膜晶体管（TFT）阵列基板及其制造方法。 TFT阵列基板可以包括设置在基板上的栅极线，包括栅极线和栅电极，设置在栅电极上的氧化物半导体层图案，设置在氧化物半导体层图案上的数据线，并且包括源电极和薄膜晶体管（TFT）的漏电极和栅电极以及沿着与栅极线交叉的方向延伸的数据线，以及蚀刻停止图案，设置在源极/漏极之间形成TFT的区域，以及氧化物半导体层图案和栅极线与数据线在栅极线与数据线之间重叠的区域。

5. 发明申请

US20090251647A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20090251647A1
公开(公告)日：2009-10-08
申请号：US12361511
申请日：2009-01-28
申请人： Young-Wook LEE , Gug-Rae Jo , Jang-Soo Kim , Jae-Hyoung Youn , Byoung-Joo Kim , Min-Uk Kim , Kyoung-Keun Son
发明人： Young-Wook LEE , Gug-Rae Jo , Jang-Soo Kim , Jae-Hyoung Youn , Byoung-Joo Kim , Min-Uk Kim , Kyoung-Keun Son
IPC分类号： G02F1/1335
CPC分类号： G02F1/136286 , G02F1/133514 , G02F2001/136222 , G02F2201/40
摘要： A display substrate includes a plurality of color filters, a gate line, an insulation layer, a data line and a plurality of pixel electrodes. The color filters are formed on a base substrate. The gate line is formed in a trench defined by at least one of the color filters and extended along a first direction. The insulation layer is formed on the color filters and the gate line. The data line is formed on the insulation layer to be extended along a second direction crossing the first direction. The pixel electrodes are formed on the base substrate having the data line formed thereon. Therefore, a metal wiring is formed in a trench defined by color filters, so that the resistance of the metal wiring may be decreased and an aperture ratio may be enhanced.
摘要翻译：显示基板包括多个滤色器，栅极线，绝缘层，数据线和多个像素电极。滤色器形成在基底基板上。栅极线形成在由至少一个滤色器限定的沟槽中并且沿着第一方向延伸。绝缘层形成在滤色器和栅极线上。数据线形成在绝缘层上，沿着与第一方向交叉的第二方向延伸。像素电极形成在其上形成有数据线的基底基板上。因此，在由滤色器限定的沟槽中形成金属布线，从而可以降低金属布线的电阻，并且可以提高开口率。

6. 发明申请

US20080073718A1 MASK FOR FORMING A THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED USING THE SAME AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
标题翻译：形成薄膜晶体管的掩模，使用其制造的薄膜晶体管衬底和使用其制造薄膜晶体管衬底的方法
公开(公告)号：US20080073718A1
公开(公告)日：2008-03-27
申请号：US11861113
申请日：2007-09-25
申请人： Young-Wook LEE , Woo-Geun Lee , Jung-In Park , Youn-Hee Cha
发明人： Young-Wook LEE , Woo-Geun Lee , Jung-In Park , Youn-Hee Cha
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/1288
摘要： A mask that is capable of forming a thin-film transistor (TFT) with improved electrical characteristics is presented. The mask includes a drain mask pattern, a source mask pattern and a light-adjusting pattern. The drain mask pattern blocks light for forming a drain electrode. The source mask pattern blocks light for forming a source electrode and faces the drain mask pattern. A distance between the drain and source mask patterns is no more than the resolution of an exposing device. The light-adjusting pattern is formed between end portions of the source mask pattern and the drain mask pattern to block at least some light from entering a space between the source and drain mask patterns.
摘要翻译：提出了能够形成具有改善的电特性的薄膜晶体管（TFT）的掩模。掩模包括漏极掩模图案，源掩模图案和调光图案。漏极掩模图案阻挡用于形成漏电极的光。源极掩模图案阻挡用于形成源极的光并面向漏极掩模图案。漏极和源极掩模图案之间的距离不大于曝光装置的分辨率。光源调制图案形成在源掩模图案和漏极掩模图案的端部之间，以阻挡至少一些光进入源极和漏极掩模图案之间的空间。

7. 发明申请

US20110227063A1 THIN-FILM TRANSISTOR, METHOD OF FABRICATING THE THIN-FILM TRANSISTOR, AND DISPLAY SUBSTRATE USING THE THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，薄膜晶体管的制造方法和使用薄膜晶体管显示衬底
公开(公告)号：US20110227063A1
公开(公告)日：2011-09-22
申请号：US13046130
申请日：2011-03-11
申请人： Pil-Sang YUN , Young-Wook LEE , Woo-Geun LEE
发明人： Pil-Sang YUN , Young-Wook LEE , Woo-Geun LEE
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L21/467 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/7869
摘要： Provided is an oxide thin-film transistor (TFT) substrate that may enhance the display quality of a display device and a method of fabricating the same via a simple process. The oxide TFT substrate includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
摘要翻译：提供了可以通过简单的处理来提高显示装置的显示质量的氧化物薄膜晶体管（TFT）基板及其制造方法。氧化物TFT基板包括：基板，栅极线，数据线，氧化物TFT和像素电极。氧化物TFT的氧化物层包括具有半导体特性的第一区域和沟道，以及导电并围绕第一区域的第二区域。第一区域的一部分电连接到像素电极，并且第二区域电连接到数据线。

8. 发明申请

US20090184325A1 METHOD OF PLANARIZING SUBSTRATE, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME 审中-公开
标题翻译：基板平面化方法，阵列基板及使用其制造阵列基板的方法
公开(公告)号：US20090184325A1
公开(公告)日：2009-07-23
申请号：US12331044
申请日：2008-12-09
申请人： Jeong-Min PARK , Doo-Hee JUNG , Hi-Kuk LEE , Young-Wook LEE
发明人： Jeong-Min PARK , Doo-Hee JUNG , Hi-Kuk LEE , Young-Wook LEE
IPC分类号： H01L33/00 , B44C1/22 , H01L21/336
CPC分类号： H01L21/2686 , H01L21/31058 , H01L27/1248 , H01L29/78636
摘要： A method of planarizing a substrate. An organic layer is formed on a base substrate to cover a metal line formed on the base substrate. A portion of the organic layer is removed to form a pre-planarization layer exposing the metal layer, so that a surface of the base substrate having the metal line is planarized. The pre-planarization layer is cured to flow toward a side surface of the metal line to form a planarization layer making contact with the side surface of the metal line. Therefore, a stepped portion between the base substrate and the metal line can be minimized or substantially eliminated, thereby increasing the surface uniformity of a subsequent layer, thereby improving the reliability of the manufacturing process.
摘要翻译：平面化基板的方法。在基底基板上形成有机层，以覆盖形成在基底基板上的金属线。去除有机层的一部分以形成暴露金属层的预平坦化层，使得具有金属线的基底基板的表面被平坦化。固化预平坦化层以朝金属线的侧面流动，形成与金属线的侧面接触的平坦化层。因此，可以将基底基板与金属线之间的阶梯部分最小化或基本上消除，从而提高后续层的表面均匀性，从而提高制造工艺的可靠性。

9. 发明申请

US20070139572A1 THIN FILM TRANSISTOR ARRAY PANEL FOR LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管阵列液晶显示器及其制造方法
公开(公告)号：US20070139572A1
公开(公告)日：2007-06-21
申请号：US11609144
申请日：2006-12-11
申请人： Young-Wook LEE
发明人： Young-Wook LEE
IPC分类号： G02F1/136
CPC分类号： G02F1/134309 , G02F2001/134381 , G02F2201/128
摘要： A thin film transistor array panel includes a substrate, a gate line disposed on the substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line contacting the semiconductor layer, a drain electrode contacting the semiconductor layer and separated from the data line, a pixel electrode disposed on the gate insulating layer and contacting the drain electrode, a passivation layer disposed on the pixel electrode, and a common electrode disposed on the passivation layer and including a unit electrode overlapping the pixel electrode.
摘要翻译：薄膜晶体管阵列面板包括基板，设置在基板上的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，与半导体层接触的数据线，接触的漏极电极半导体层并与数据线分离，设置在栅极绝缘层上并接触漏电极的像素电极，设置在像素电极上的钝化层和设置在钝化层上的公共电极，并且包括与像素电极。

10. 发明申请

US20100123842A1 LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREOF 有权
标题翻译：液晶显示及其驱动方法
公开(公告)号：US20100123842A1
公开(公告)日：2010-05-20
申请号：US12421618
申请日：2009-04-09
申请人： Young-Wook LEE , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
发明人： Young-Wook LEE , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/13306 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G3/3659 , G09G2300/0443 , G09G2300/0447 , G09G2300/0809 , G09G2300/0876 , G09G2320/028
摘要： Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor.
摘要翻译：本发明的实施例涉及一种液晶显示器及其驱动方法。根据实施例，液晶显示器包括具有彼此电分离的第一子像素电极，第二子像素电极和第三子像素电极的像素电极。液晶显示器包括连接到第一子像素电极的第一薄膜晶体管，连接到第二子像素电极的第二薄膜晶体管，连接到第三子像素电极的第三薄膜晶体管和连接到第三子像素电极的第四薄膜晶体管第二子像素电极和第三子像素电极。液晶显示器包括连接到第一至第三薄膜晶体管的第一栅极线，连接到第四薄膜晶体管的第二栅极线，连接到第一和第二薄膜晶体管的数据线，以及连接到第一和第二薄膜晶体管的存储电极线到第三薄膜晶体管。

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