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    • 2. 发明授权
    • Semiconductor substrates and manufacturing methods of the same
    • 半导体衬底及其制造方法相同
    • US07902007B2
    • 2011-03-08
    • US12219360
    • 2008-07-21
    • Won-joo KimTae-hee LeeDae-kil ChaYoon-dong Park
    • Won-joo KimTae-hee LeeDae-kil ChaYoon-dong Park
    • H01L21/84
    • H01L29/7841
    • Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.
    • 提供半导体基板及其制造方法。 半导体衬底包括衬底区域,绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离,并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案,通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域,以及填充绝缘体 在浮体区域和衬底区域之间的材料。
    • 5. 发明申请
    • Semiconductor substrates and manufacturing methods of the same
    • 半导体衬底及其制造方法相同
    • US20090212364A1
    • 2009-08-27
    • US12219360
    • 2008-07-21
    • Won-joo KimTae-hee LeeDae-kil ChaYoon-dong Park
    • Won-joo KimTae-hee LeeDae-kil ChaYoon-dong Park
    • H01L27/12H01L21/00
    • H01L29/7841
    • Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.
    • 提供半导体基板及其制造方法。 半导体衬底包括衬底区域,绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离,并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案,通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域,以及填充绝缘体 在浮体区域和衬底区域之间的材料。