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1. 发明申请

US20110086459A1 METHOD OF FABRICATING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR 有权
标题翻译：补充金属氧化物半导体（CMOS）图像传感器的方法
公开(公告)号：US20110086459A1
公开(公告)日：2011-04-14
申请号：US12970547
申请日：2010-12-16
申请人： Won-Joon Ho , Kyung-Lak Lee
发明人： Won-Joon Ho , Kyung-Lak Lee
IPC分类号： H01L31/18
CPC分类号： H01L27/14603 , H01L27/14683 , H01L29/7851 , H01L29/7853 , H01L2924/0002 , H01L2924/00
摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
摘要翻译：提供了CMOS图像传感器及其制造方法。具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接区域由阻挡层。

2. 发明授权

US08247256B2 Method of fabricating a complementary metal oxide semiconductor (CMOS) image sensor 有权
标题翻译：制造互补金属氧化物半导体（CMOS）图像传感器的方法
公开(公告)号：US08247256B2
公开(公告)日：2012-08-21
申请号：US12970547
申请日：2010-12-16
申请人： Won-Joon Ho , Kyung-Lak Lee
发明人： Won-Joon Ho , Kyung-Lak Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14683 , H01L29/7851 , H01L29/7853 , H01L2924/0002 , H01L2924/00
摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
摘要翻译：提供了CMOS图像传感器及其制造方法。具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接区域由阻挡层。

3. 发明申请

US20060284273A1 CMOS image sensor and method for fabrication thereof 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20060284273A1
公开(公告)日：2006-12-21
申请号：US11452296
申请日：2006-06-14
申请人： Won-Joon Ho , Kyung-Lak Lee
发明人： Won-Joon Ho , Kyung-Lak Lee
IPC分类号： H01L27/14
CPC分类号： H01L27/14603 , H01L27/14683 , H01L29/7851 , H01L29/7853 , H01L2924/0002 , H01L2924/00
摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
摘要翻译：提供了CMOS图像传感器及其制造方法。具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接区域由阻挡层。

4. 发明授权

US07863658B2 CMOS image sensor and method for fabrication thereof 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07863658B2
公开(公告)日：2011-01-04
申请号：US11452296
申请日：2006-06-14
申请人： Won-Joon Ho , Kyung-Lak Lee
发明人： Won-Joon Ho , Kyung-Lak Lee
IPC分类号： H01L29/76
CPC分类号： H01L27/14603 , H01L27/14683 , H01L29/7851 , H01L29/7853 , H01L2924/0002 , H01L2924/00
摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
摘要翻译：提供了CMOS图像传感器及其制造方法。具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接区域由阻挡层。

5. 发明授权

US06498082B1 Method of forming a polysilicon layer 失效
标题翻译：形成多晶硅层的方法
公开(公告)号：US06498082B1
公开(公告)日：2002-12-24
申请号：US09643730
申请日：2000-08-23
申请人： Won-Joon Ho , Hyung-Sik Kim
发明人： Won-Joon Ho , Hyung-Sik Kim
IPC分类号： H01L213205
CPC分类号： H01L29/4925 , H01L21/28035 , H01L21/32055
摘要： A method of forming a polysilicon layer includes the steps of: loading a semiconductor substrate in a CVD reactor wherein a gate insulating layer is formed on the substrate; decompressing the reactor; depositing a first polysilicon layer on the substrate by flowing an SiH4 gas into the reactor; forming a plurality of Si—N bonds on the first polysilicon layer by maintaining atmospheric pressure of the reactor by filling the reactor with nitrogen gas; decompressing the reactor; and depositing a second polysilicon layer on the first polysilicon layer by flowing SiH4 gas into the reactor.
摘要翻译：形成多晶硅层的方法包括以下步骤：将半导体衬底装载在CVD反应器中，其中栅极绝缘层形成在衬底上; 减压反应器; 通过使SiH 4气体流入反应器而在衬底上沉积第一多晶硅层; 通过用氮气填充反应器来保持反应器的大气压在第一多晶硅层上形成多个Si-N键; 减压反应器; 以及通过将SiH 4气体流入反应器而在第一多晶硅层上沉积第二多晶硅层。

6. 发明授权

US07687333B2 Method of fabricating thin film transistor and array substrate for liquid crystal display device including the same 有权
标题翻译：制造包括该薄膜晶体管的液晶显示装置的薄膜晶体管和阵列基板的方法
公开(公告)号：US07687333B2
公开(公告)日：2010-03-30
申请号：US11965423
申请日：2007-12-27
申请人： Hee-Jung Yang , Dong-sun Kim , Du-Seok Oh , Won-Joon Ho
发明人： Hee-Jung Yang , Dong-sun Kim , Du-Seok Oh , Won-Joon Ho
IPC分类号： H01L21/336
CPC分类号： H01L29/458 , H01L21/2855 , H01L21/76841 , H01L27/124 , H01L27/1288
摘要： According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
摘要翻译：根据一个实施例，制造薄膜晶体管的方法包括在衬底上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层，所述半导体层对应于所述栅电极; 在所述半导体层上形成第一和第二屏障图案，所述第一和第二屏障图案包括氮化铜; 以及分别在第一和第二阻挡图案上形成源极和漏极，源极和漏极包括纯铜。

7. 发明申请

US20090294781A1 ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：用于液晶显示装置的阵列基板及其制造方法
公开(公告)号：US20090294781A1
公开(公告)日：2009-12-03
申请号：US12271775
申请日：2008-11-14
申请人： Seok-Won KIM , Won-Joon Ho , Hyuk-Jin Kwon , Chang-Mo Yoo
发明人： Seok-Won KIM , Won-Joon Ho , Hyuk-Jin Kwon , Chang-Mo Yoo
IPC分类号： H01L21/336 , H01L33/00
CPC分类号： H01L27/124 , G02F1/1368 , G02F2001/136236 , G02F2201/40 , G03F7/40 , G03F7/427 , H01L27/1288
摘要： A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material layer using the initial PR pattern as an etching mask to form the data line and a metallic material pattern, wherein the initial PR pattern is disposed on the data line; performing a first ashing process onto the initial PR pattern to partially remove the initial PR pattern so as to form a first ashed PR pattern, the first ashed PR pattern having a smaller width and a smaller thickness than the initial PR pattern such that end portions of the data line are exposed by the first ashed PR pattern; etching the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer by a first dry-etching process; forming a source electrode and a drain electrode on the substrate.
摘要翻译：制造液晶显示装置阵列基板的方法包括：在金属材料层上形成初始光致抗蚀剂（PR）图案; 使用初始PR图案蚀刻金属材料层作为蚀刻掩模以形成数据线和金属材料图案，其中初始PR图案设置在数据线上; 对初始PR图案执行第一灰化处理以部分地去除初始PR图案以形成第一灰化PR图案，第一灰化PR图案具有比初始PR图案更小的宽度和更小的厚度，数据线由第一个灰色PR图案曝光; 通过第一干蚀刻工艺蚀刻本征非晶硅层和杂质掺杂非晶硅层; 在基板上形成源电极和漏电极。

8. 发明授权

US08183070B2 Array substrate for liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US08183070B2
公开(公告)日：2012-05-22
申请号：US12271775
申请日：2008-11-14
申请人： Seok-Won Kim , Won-Joon Ho , Hyuk-Jin Kwon , Chang-Mo Yoo
发明人： Seok-Won Kim , Won-Joon Ho , Hyuk-Jin Kwon , Chang-Mo Yoo
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F1/1368 , G02F2001/136236 , G02F2201/40 , G03F7/40 , G03F7/427 , H01L27/1288
摘要： A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material layer using the initial PR pattern as an etching mask to form the data line and a metallic material pattern, wherein the initial PR pattern is disposed on the data line; performing a first ashing process onto the initial PR pattern to partially remove the initial PR pattern so as to form a first ashed PR pattern, the first ashed PR pattern having a smaller width and a smaller thickness than the initial PR pattern such that end portions of the data line are exposed by the first ashed PR pattern; etching the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer by a first dry-etching process; forming a source electrode and a drain electrode on the substrate.
摘要翻译：制造液晶显示装置阵列基板的方法包括：在金属材料层上形成初始光致抗蚀剂（PR）图案; 使用初始PR图案蚀刻金属材料层作为蚀刻掩模以形成数据线和金属材料图案，其中初始PR图案设置在数据线上; 对初始PR图案执行第一灰化处理以部分地去除初始PR图案以形成第一灰化PR图案，第一灰化PR图案具有比初始PR图案更小的宽度和更小的厚度，数据线由第一个灰色PR图案曝光; 通过第一干蚀刻工艺蚀刻本征非晶硅层和杂质掺杂非晶硅层; 在基板上形成源电极和漏电极。

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