专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120319137A1 Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same 有权
标题翻译：静电放电保护元件和静电放电保护芯片及其制造方法
公开(公告)号：US20120319137A1
公开(公告)日：2012-12-20
申请号：US13599636
申请日：2012-08-30
申请人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
发明人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
IPC分类号： H01L29/73 , H01L29/16 , H01L21/331 , H01L29/12 , H01L29/20
CPC分类号： H01L23/60 , H01L27/0259 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
摘要翻译：静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。集电区具有第一导电类型。第一屏障区域与集电区域相邻，具有第二导电类型。半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。发射极区域与第二阻挡区域相邻并且具有第一导电类型。

2. 发明申请

US20110026174A1 Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same 有权
标题翻译：静电放电保护元件和静电放电保护芯片及其制造方法
公开(公告)号：US20110026174A1
公开(公告)日：2011-02-03
申请号：US12533919
申请日：2009-07-31
申请人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
发明人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
IPC分类号： H02H9/04 , H01L29/12 , H01L29/73 , H01L21/331
CPC分类号： H01L23/60 , H01L27/0259 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
摘要翻译：描述了静电放电（ESD）保护元件，ESD保护元件包括集电极区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。集电区具有第一导电类型。第一屏障区域与集电区域相邻，具有第二导电类型。半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。发射极区域与第二阻挡区域相邻并且具有第一导电类型。

3. 发明授权

US08530968B2 Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same 有权
公开(公告)号：US08530968B2
公开(公告)日：2013-09-10
申请号：US13599636
申请日：2012-08-30
申请人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
发明人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
IPC分类号： H01L23/62
CPC分类号： H01L23/60 , H01L27/0259 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

4. 发明授权

US08270131B2 Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same 有权
标题翻译：静电放电保护元件及静电放电保护芯片及其制造方法
公开(公告)号：US08270131B2
公开(公告)日：2012-09-18
申请号：US12533919
申请日：2009-07-31
申请人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
发明人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
IPC分类号： H02H9/00
CPC分类号： H01L23/60 , H01L27/0259 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
摘要翻译：描述了静电放电（ESD）保护元件，ESD保护元件包括集电极区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。集电区具有第一导电类型。第一屏障区域与集电区域相邻，具有第二导电类型。半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。发射极区域与第二阻挡区域相邻并且具有第一导电类型。

5. 发明授权

US09143123B2 RF switch, mobile communication device and method for switching an RF signal 有权
标题翻译： RF开关，移动通信装置以及用于切换RF信号的方法
公开(公告)号：US09143123B2
公开(公告)日：2015-09-22
申请号：US13545822
申请日：2012-07-10
申请人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
发明人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
IPC分类号： H03K17/56 , H03K17/687 , H03K17/10 , H03K17/693
CPC分类号： H03K17/102 , H03K17/693
摘要： An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.
摘要翻译： RF开关包括可切换RF晶体管。可切换RF晶体管包括多个相邻RF晶体管指状物的条纹和布置在可切换RF晶体管的条带末端的至少一个不可切换的虚设晶体管。

6. 发明申请

US20140015593A1 RF Switch, Mobile Communication Device and Method for Switching an RF Signal 有权
标题翻译：射频开关，移动通信设备和用于切换RF信号的方法
公开(公告)号：US20140015593A1
公开(公告)日：2014-01-16
申请号：US13545822
申请日：2012-07-10
申请人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
发明人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/102 , H03K17/693
摘要： An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.
摘要翻译： RF开关包括可切换RF晶体管。可切换RF晶体管包括多个相邻RF晶体管指状物的条纹和布置在可切换RF晶体管的条带末端的至少一个不可切换的虚设晶体管。

7. 发明授权

US09570974B2 High-frequency switching circuit 有权
标题翻译：高频开关电路
公开(公告)号：US09570974B2
公开(公告)日：2017-02-14
申请号：US12704737
申请日：2010-02-12
申请人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
发明人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
IPC分类号： H03K17/16 , H03K17/687 , H02M3/07
CPC分类号： H02M3/07 , H03K17/161 , H03K17/6871 , H03K2217/0018
摘要： A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.
摘要翻译：高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

8. 发明授权

US08326234B2 High frequency switching circuit and method for determining a power of a high frequency signal 有权
标题翻译：高频开关电路及确定高频信号功率的方法
公开(公告)号：US08326234B2
公开(公告)日：2012-12-04
申请号：US12705145
申请日：2010-02-12
申请人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
发明人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
IPC分类号： H04B1/44 , H01P1/10
CPC分类号： H04B1/48
摘要： A high frequency switching circuit, including a high frequency switching element. The high frequency switching element including a first channel terminal and a second channel terminal, wherein the high frequency switching element is configured to switchably route a high frequency signal via a channel path between the first channel terminal and the second channel terminal. The high frequency switching circuit further includes a power detection circuit, wherein the power detection circuit is configured to obtain a first measurement signal from the first channel terminal and a second measurement signal from the second channel terminal, and to combine the first measurement signal and the second measurement signal to derive, in dependence on both the first measurement signal and the second measurement signal, a power signal describing a power value of the high frequency signal routed via the channel path of the high frequency switching element.
摘要翻译：高频开关电路，包括高频开关元件。所述高频开关元件包括第一通道端子和第二通道端子，其中所述高频开关元件被配置为经由所述第一通道端子和所述第二通道端子之间的通道路径切换地路由高频信号。高频切换电路还包括功率检测电路，其中功率检测电路被配置为从第一通道端获得第一测量信号和从第二通道端获得第二测量信号，并且将第一测量信号和第二测量信号，根据第一测量信号和第二测量信号，导出描述经由高频开关元件的沟道路径路由的高频信号的功率值的功率信号。

9. 发明申请

US20110201281A1 High Frequency Switching Circuit and Method for Determining a Power of a High Frequency Signal 有权
标题翻译：高频开关电路及确定高频信号功率的方法
公开(公告)号：US20110201281A1
公开(公告)日：2011-08-18
申请号：US12705145
申请日：2010-02-12
申请人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
发明人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
IPC分类号： H04B1/40 , H03K17/687 , H03F3/45 , G06G7/12 , H03H7/01
CPC分类号： H04B1/48
摘要： A high frequency switching circuit, including a high frequency switching element. The high frequency switching element including a first channel terminal and a second channel terminal, wherein the high frequency switching element is configured to switchably route a high frequency signal via a channel path between the first channel terminal and the second channel terminal. The high frequency switching circuit further includes a power detection circuit, wherein the power detection circuit is configured to obtain a first measurement signal from the first channel terminal and a second measurement signal from the second channel terminal, and to combine the first measurement signal and the second measurement signal to derive, in dependence on both the first measurement signal and the second measurement signal, a power signal describing a power value of the high frequency signal routed via the channel path of the high frequency switching element.
摘要翻译：高频开关电路，包括高频开关元件。所述高频开关元件包括第一通道端子和第二通道端子，其中所述高频开关元件被配置为经由所述第一通道端子和所述第二通道端子之间的通道路径切换地路由高频信号。高频切换电路还包括功率检测电路，其中功率检测电路被配置为从第一通道端获得第一测量信号和从第二通道端获得第二测量信号，并且将第一测量信号和第二测量信号，根据第一测量信号和第二测量信号，导出描述经由高频开关元件的沟道路径路由的高频信号的功率值的功率信号。

10. 发明申请

US20110199146A1 High-Frequency Switching Circuit 有权
标题翻译：高频开关电路
公开(公告)号：US20110199146A1
公开(公告)日：2011-08-18
申请号：US12704737
申请日：2010-02-12
申请人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
发明人： Winfried Bakalski , Hans Taddiken , Nikolay Ilkov , Herbert Kebinger
IPC分类号： H03K17/687
CPC分类号： H02M3/07 , H03K17/161 , H03K17/6871 , H03K2217/0018
摘要： A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.
摘要翻译：高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式