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4. 发明授权

US07465661B2 High aspect ratio microelectrode arrays 有权
标题翻译：高纵横比微电极阵列
公开(公告)号：US07465661B2
公开(公告)日：2008-12-16
申请号：US10446257
申请日：2003-05-28
申请人： Charles Merritt , Brian Justus
发明人： Charles Merritt , Brian Justus
IPC分类号： H01L21/326 , H01L21/479
CPC分类号： C25D1/00 , C25D1/04
摘要： A method of electroplating a metal into a plurality of channels within an insulating material includes mounting the material to a cathode; placing the cathode into an electroplating solution containing the metal; placing an anode into the electroplating solution; connecting the cathode and the anode to a power supply; controlling operation of the power supply to provide a beginning current density during deposition at the insulating material and initiating electroplating of the metal within the plurality of channels starting at one face of the insulating material; and controlling operation of the power supply to provide a final current density during deposition at the insulating material and ending electroplating of the metal within the plurality of channels at the other face of the insulating material. The final current density is larger than the beginning current density, and the beginning current density is maintained at a level for a sufficient time to substantially prevent bubble formation during the electroplating.
摘要翻译：将金属电镀在绝缘材料内的多个通道中的方法包括将材料安装到阴极; 将阴极放入含有金属的电镀溶液中; 将阳极放入电镀溶液中; 将阴极和阳极连接到电源; 控制所述电源的操作以在所述绝缘材料沉积期间提供初始电流密度并且在所述绝缘材料的一个面处开始在所述多个通道内的所述金属的电镀; 以及控制电源的操作，以在绝缘材料沉积期间提供最终的电流密度，并且在绝缘材料的另一面的多个通道内终止金属的电镀。最终电流密度大于起始电流密度，并且开始电流密度保持在足够时间的水平以基本上防止在电镀期间的气泡形成。

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