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1. 发明授权

US08098968B2 Silicide thermal heaters for silicon-on-insulator nanophotonic devices 失效
标题翻译：用于绝缘体上硅纳米光电器件的硅化物热加热器
公开(公告)号：US08098968B2
公开(公告)日：2012-01-17
申请号：US11849591
申请日：2007-09-04
申请人： William Michael John Green , Hendrik F. Hamann , Yurii A. Vlasov
发明人： William Michael John Green , Hendrik F. Hamann , Yurii A. Vlasov
IPC分类号： G02B6/12 , G02F1/01
CPC分类号： G02B6/125 , B82Y20/00 , G02B2006/12145 , G02B2006/12147 , G02F1/0147 , G02F1/025
摘要： A thermally switched Silicon-On-Insulator (SOI) photo electronic device includes a silicon layer including an optical waveguide and a silicide heating element horizontally adjacent to the waveguide. The waveguide has a refractive index that changes with heat applied to the waveguide.
摘要翻译：热开关绝缘体上硅（SOI）光电子器件包括包含光波导的硅层和与波导水平相邻的硅化物加热元件。波导具有随着施加到波导的热而变化的折射率。

2. 发明申请

US20110002576A1 Silicide Thermal Heaters for Silicon-on-Insulator Nanophotonic Devices 失效
标题翻译：硅绝缘体纳米光子器件的硅化物热加热器
公开(公告)号：US20110002576A1
公开(公告)日：2011-01-06
申请号：US11849591
申请日：2007-09-04
申请人： William M. Green , Hendrik F. Hamann , Yurii A. Vlasov
发明人： William M. Green , Hendrik F. Hamann , Yurii A. Vlasov
IPC分类号： G02F1/295 , B29D11/00 , B05D3/00 , B05D1/36
CPC分类号： G02B6/125 , B82Y20/00 , G02B2006/12145 , G02B2006/12147 , G02F1/0147 , G02F1/025
摘要： A thermally switched Silicon-On-Insulator (SOI) photo electronic device includes a silicon layer including an optical waveguide and a silicide heating element horizontally adjacent to the waveguide. The waveguide has a refractive index that changes with heat applied to the waveguide.
摘要翻译：热开关绝缘体上硅（SOI）光电子器件包括包含光波导的硅层和与波导水平相邻的硅化物加热元件。波导具有随着施加到波导的热而变化的折射率。

3. 发明授权

US07068865B2 Method and apparatus for thermo-optic modulation of optical signals 有权
标题翻译：用于光信号光热调制的方法和装置
公开(公告)号：US07068865B2
公开(公告)日：2006-06-27
申请号：US10755816
申请日：2004-01-12
申请人： Hendrik F. Hamann , Sharee J. McNab , Martin P. O'Boyle , Yurii A. Vlasov
发明人： Hendrik F. Hamann , Sharee J. McNab , Martin P. O'Boyle , Yurii A. Vlasov
IPC分类号： G02F1/295
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/26 , G02B6/29353 , G02F1/011 , G02F1/0147 , G02F1/025 , G02F2201/12 , G02F2202/32
摘要： The present invention is a method and an apparatus for thermo-optic control of optical signals using photonic crystal structures. In one embodiment, a first portion of a split signal is modulated by propagating the signal through a photonic crystal waveguide in which two electrical contacts are laterally spaced from the waveguide region by a plurality of apertures formed through the photonic crystal substrate. A voltage applied across the electrical contacts causes resistive heating of the proximate photonic crystal waveguide through which the signal propagates, thereby modulating the temperature relative to an un-modulated second portion of the split signal that is used as a reference.
摘要翻译：本发明是一种使用光子晶体结构对光信号进行热光控制的方法和装置。在一个实施例中，通过将信号传播通过光子晶体波导来调制分割信号的第一部分，其中两个电触点与通过光子晶体衬底形成的多个孔与波导区域横向间隔开。施加在电触点上的电压引起信号传播的邻近光子晶体波导的电阻加热，从而调制相对于用作参考的分离信号的未调制第二部分的温度。

4. 发明授权

US08606060B2 Method and apparatus for dynamic manipulation and dispersion in photonic crystal devices 有权
标题翻译：光子晶体器件动态操作和色散的方法和装置
公开(公告)号：US08606060B2
公开(公告)日：2013-12-10
申请号：US11122152
申请日：2005-05-04
申请人： Hendrik F. Hamann , Sharee J. McNab , Martin P. O'Boyle , Yurii A. Vlasov
发明人： Hendrik F. Hamann , Sharee J. McNab , Martin P. O'Boyle , Yurii A. Vlasov
IPC分类号： G02B6/10 , G02B6/26 , G02B6/032 , G02F1/035 , G02F1/295
CPC分类号： G02B6/1225 , B82Y20/00 , G02F1/011 , G02F1/0147 , G02F1/025 , G02F2201/12 , G02F2202/32
摘要： The present invention is a method and an apparatus for dynamic manipulation and dispersion in photonic crystal devices. In one embodiment, a photonic crystal structure comprises a substrate having a plurality of apertures formed therethrough, a waveguide formed by “removing” a row of apertures, and a plurality of pairs of lateral electrical contacts, the lateral electrical contact pairs extending along the length of the waveguide in a spaced-apart manner. The lateral electrical contact pairs facilitate local manipulation of the photonic crystal structure's refractive index. Thus, optical signals of different wavelengths that propagate through the photonic crystal structure can be dynamically manipulated.
摘要翻译：本发明是用于光子晶体器件中的动态操作和分散的方法和装置。在一个实施例中，光子晶体结构包括具有穿过其中形成的多个孔的基板，通过“移除”一排孔而形成的波导以及多对横向电触点，所述横向电接触对沿着长度的波导。横向电接触对有助于光子晶体结构折射率的局部操纵。因此，可以动态地操纵传播通过光子晶体结构的不同波长的光信号。

5. 发明授权

US08406575B2 Junction field effect transistor geometry for optical modulators 有权
标题翻译：用于光学调制器的结场效应晶体管几何形状
公开(公告)号：US08406575B2
公开(公告)日：2013-03-26
申请号：US12535296
申请日：2009-08-04
申请人： William Michael John Green , Yurii A. Vlasov
发明人： William Michael John Green , Yurii A. Vlasov
IPC分类号： G02F1/01 , G02B6/12 , H01L29/80
CPC分类号： G02F1/025 , G02F1/0121
摘要： An optoelectronic apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.
摘要翻译：用于控制信号的光电子装置包括具有可变折射率的光波导; 形成在波导内的有源器件，该器件具有三个电极，漏极，源极和栅极; 并且其中所述器件位于所述波导内，使得从所述漏极流到所述源极的电流改变所述折射率。

6. 发明授权

US07711212B2 Junction field effect transistor geometry for optical modulators 失效
标题翻译：用于光学调制器的结场效应晶体管几何形状
公开(公告)号：US07711212B2
公开(公告)日：2010-05-04
申请号：US11859665
申请日：2007-09-21
申请人： William Michael John Green , Yurii A. Vlasov
发明人： William Michael John Green , Yurii A. Vlasov
IPC分类号： G02F1/01 , G02B6/12 , H01L29/80
CPC分类号： G02F1/025 , G02F1/0121
摘要： An apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.
摘要翻译：用于控制信号的装置包括具有可变折射率的光波导; 形成在波导内的有源器件，该器件具有三个电极，漏极，源极和栅极; 并且其中所述器件位于所述波导内，使得从所述漏极流到所述源极的电流改变所述折射率。

7. 发明申请

US20090290831A1 Junction Field Effect Transistor Geometry for Optical Modulators 有权
标题翻译：用于光调制器的结场效应晶体管几何
公开(公告)号：US20090290831A1
公开(公告)日：2009-11-26
申请号：US12535296
申请日：2009-08-04
申请人： William Michael John Green , Yurii A. Vlasov
发明人： William Michael John Green , Yurii A. Vlasov
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F1/0121
摘要： An optoelectronic apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.
摘要翻译：用于控制信号的光电子装置包括具有可变折射率的光波导; 形成在波导内的有源器件，该器件具有三个电极，漏极，源极和栅极; 并且其中所述器件位于所述波导内，使得从所述漏极流到所述源极的电流改变所述折射率。

8. 发明申请

US20090080826A1 JUNCTION FIELD EFFECT TRANSISTOR GEOMETRY FOR OPTICAL MODULATORS 失效
标题翻译：用于光学调制器的连接场效应晶体管几何
公开(公告)号：US20090080826A1
公开(公告)日：2009-03-26
申请号：US11859665
申请日：2007-09-21
申请人： William Michael John Green , Yurii A. Vlasov
发明人： William Michael John Green , Yurii A. Vlasov
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F1/0121
摘要： An apparatus for controlling a signal includes an optical waveguide having a variable refractive index; an active device formed within the waveguide, the device having three electrodes, a drain, a source and a gate; and wherein the device is located within the waveguide so that current flowing from the drain to the source changes the refractive index.
摘要翻译：用于控制信号的装置包括具有可变折射率的光波导; 形成在波导内的有源器件，该器件具有三个电极，漏极，源极和栅极; 并且其中所述器件位于所述波导内，使得从所述漏极流到所述源极的电流改变所述折射率。

9. 发明授权

US08953952B2 Optical receiver based on a decision feedback equalizer 有权
标题翻译：基于判决反馈均衡器的光接收机
公开(公告)号：US08953952B2
公开(公告)日：2015-02-10
申请号：US13596755
申请日：2012-08-28
申请人： Jonathan E. Poesel , Alexander V. Rylyakov , Clint L. Schow , Yurii A. Vlasov
发明人： Jonathan E. Poesel , Alexander V. Rylyakov , Clint L. Schow , Yurii A. Vlasov
IPC分类号： H04B10/06 , H03F3/08 , H04B10/69 , H04L25/03
CPC分类号： H03F3/08 , H04B10/6971 , H04L25/03057
摘要： An optical receiver, a method of operating an optical receiver, a correction based transimpedance amplifier circuit, and a method of adjusting an output of a transimpedance amplifier. In one embodiment, the optical receiver comprises an optical-to-electrical converter, a transimpedance amplifier, and a correction circuit. The optical-to-electrical converter is provided for receiving an optical signal and converting the optical signal to an electrical signal. The transimpedance amplifier is provided for receiving the electrical signal from the converter and for generating from the electrical signal an amplified electrical signal. The amplified electrical signal has inter symbol interference resulting from a reduced bandwidth of the transimpedance amplifier. The correction circuit is provided for receiving the electrical signal from the amplifier and for generating, from the electrical signal, an output signal including corrections for the inter symbol interference in the amplified electrical signal effectively increasing a bandwidth of the optical receiver.
摘要翻译：光接收器，操作光接收器的方法，基于校正的跨阻抗放大器电路以及调制跨阻放大器的输出的方法。在一个实施例中，光接收器包括光电转换器，跨阻放大器和校正电路。光 - 电转换器用于接收光信号并将光信号转换成电信号。跨阻放大器被提供用于从转换器接收电信号并且从电信号产生放大的电信号。放大的电信号具有由跨阻放大器的减少的带宽导致的码间干扰。该校正电路用于接收来自放大器的电信号，并且用于从电信号产生包括用于放大的电信号中的符号间干扰的校正的输出信号，从而有效地增加光接收器的带宽。

10. 发明授权

US08772902B2 Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration 失效
标题翻译：在硅硅衬底上制造具有平面氧化物/ SOI界面的局部厚盒，用于硅光子学集成
公开(公告)号：US08772902B2
公开(公告)日：2014-07-08
申请号：US13451141
申请日：2012-04-19
申请人： Solomon Assefa , William M. J. Green , Marwan H. Khater , Yurii A. Vlasov
发明人： Solomon Assefa , William M. J. Green , Marwan H. Khater , Yurii A. Vlasov
IPC分类号： H01L21/70
CPC分类号： G02B6/13 , H01L21/76232 , H01L21/76289
摘要： Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.
摘要翻译：线槽形成在体半导体衬底和不透氧层的堆叠中，使得体半导体衬底中的沟槽的深度大于一对相邻定位的线沟槽之间的横向间隔。不透水间隔物形成在线沟槽的侧壁上。单独或与氧化组合的各向同性蚀刻从氧不透性间隔物的下面去除半导体材料，以扩大线沟槽的扩展底部的横向范围，并且减小相邻扩展底部之间的横向间隔。底部周围的半导体材料被氧化以形成在多个不透氧隔离物下面的半导体氧化物部分。半导体绝缘体（SOI）部分形成在半导体氧化物部分之上和体半导体衬底内。

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