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1. 发明授权

US06100183A Method for fabricating a via 有权
标题翻译：制造通孔的方法
公开(公告)号：US06100183A
公开(公告)日：2000-08-08
申请号：US132384
申请日：1998-08-11
申请人： William Lu , Tsung-Yuan Hung , Chi-Cheng Yang , Ching-Hsing Hsieh
发明人： William Lu , Tsung-Yuan Hung , Chi-Cheng Yang , Ching-Hsing Hsieh
IPC分类号： H01L21/033 , H01L21/311 , H01L21/768 , H10L21/283
CPC分类号： H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76834 , H01L21/0332 , H01L21/31116
摘要： A method for fabricating a via that uses a hard etching mask for etching the via. A photoresist layer used to pattern the hard etching mask is removed before starting the via etching. The hard etching mask includes a TiN etching mask, a silicon nitride etching mask, and a oxide/TiN etching mask. For each different etching mass, the TiN etching mask is not necessarily removed after etching; the silicon nitride etching mask is removed after etching; the oxide layer in the oxide/TiN etching mask is sacrificial layer.
摘要翻译：一种制造通孔的方法，该通孔使用硬蚀刻掩模来蚀刻通孔。在开始通孔蚀刻之前去除用于图案硬蚀刻掩模的光致抗蚀剂层。硬蚀刻掩模包括TiN蚀刻掩模，氮化硅蚀刻掩模和氧化物/ TiN蚀刻掩模。对于每个不同的蚀刻质量，TiN蚀刻掩模在蚀刻后不一定被去除; 蚀刻后去除氮化硅蚀刻掩模; 氧化物/ TiN蚀刻掩模中的氧化物层是牺牲层。

2. 发明授权

US6074941A Method of forming a via with plasma treatment of SOG 失效
标题翻译：通过等离子体处理SOG形成通孔的方法
公开(公告)号：US6074941A
公开(公告)日：2000-06-13
申请号：US113471
申请日：1998-07-10
申请人： Ching-Hsing Hsieh , William Lu , Chih-Ching Hsu , Yung-Chieh Kuo
发明人： Ching-Hsing Hsieh , William Lu , Chih-Ching Hsu , Yung-Chieh Kuo
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/316 , H01L21/3105 , H01L21/76814
摘要： A method of forming a via is provided comprising a plasma treatment at the spin-on-glass layer after forming the unlanding via. The plasma comprises hydrogen and a second gas. The mist containing in the spin-on-glass layer is damaged and removed away.
摘要翻译：提供了一种形成通孔的方法，其包括在形成无引导孔之后在旋涂玻璃层处进行等离子体处理。等离子体包括氢气和第二气体。包含在旋涂玻璃层中的雾被损坏并被去除。

3. 发明授权

US06190999B1 Method for fabricating a shallow trench isolation structure 失效
标题翻译：浅沟槽隔离结构的制造方法
公开(公告)号：US06190999B1
公开(公告)日：2001-02-20
申请号：US09152360
申请日：1998-09-14
申请人： Tsung-Yuan Hung , William Lu
发明人： Tsung-Yuan Hung , William Lu
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A method for fabricating a shallow trench isolation (STI) structure includes a pad oxide layer and a hard masking layer are sequentially formed over a semiconductor substrate. A trench is formed in the substrate by patterning over the substrate. Then, the hard masking layer is removed to expose the pad oxide layer. An insulating layer is formed over the substrate to fill the trench. Using the pad oxide layer as a polishing stop, a CMP process is performed to polish the insulating layer until the pad oxide layer is exposed. The remained pad oxide within the trench is simultaneously planarized to have a planar top surface without dishing and microscratch. After the pad oxide is removed, the STI structure is accomplished.
摘要翻译：一种制造浅沟槽隔离（STI）结构的方法包括在半导体衬底上依次形成焊盘氧化物层和硬掩模层。通过在衬底上图案化在衬底中形成沟槽。然后，去除硬掩模层以露出焊盘氧化物层。在衬底上形成绝缘层以填充沟槽。使用焊盘氧化物层作为抛光停止件，进行CMP工艺以抛光绝缘层，直到焊盘氧化物层露出。沟槽内剩余的衬垫氧化物同时被平坦化以具有平坦的顶表面，而不会产生凹陷和显微纹理。在去除衬垫氧化物之后，实现STI结构。

4. 发明授权

US6133114A Method for fabricating a shallow trench isolation 有权
标题翻译：浅沟槽隔离的制造方法
公开(公告)号：US6133114A
公开(公告)日：2000-10-17
申请号：US152450
申请日：1998-09-14
申请人： William Lu , Tsung-Yuan Hung
发明人： William Lu , Tsung-Yuan Hung
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method for fabricating a STI structure includes a pad oxide layer and a hard masking layer are sequentially formed over a semiconductor substrate. A trench is formed in the substrate by patterning over the substrate. A liner oxide layer is formed over a side-wall of the trench in the substrate. An isolating layer by APCVD and an isolating layer by HDPCVD are sequentially formed over the substrate, in which the height of the CVD isolating layer within the trench is lower than the height of the hard masking layer. A CMP process is performed, using the hard masking layer as a polishing stop. The hard masking layer and the pad oxide layer are removed to accomplish the STI structure.
摘要翻译：制造STI结构的方法包括在半导体衬底上依次形成衬垫氧化物层和硬掩模层。通过在衬底上图案化在衬底中形成沟槽。衬底氧化物层形成在衬底中的沟槽的侧壁上。通过APCVD的绝缘层和通过HDPCVD的隔离层依次形成在衬底上，其中沟槽内的CVD隔离层的高度低于硬掩模层的高度。使用硬掩模层作为抛光停止件来执行CMP处理。去除硬掩模层和焊盘氧化物层以实现STI结构。

5. 发明申请

US20050139348A1 Hot swap fan 审中-公开
标题翻译：热插拔风扇
公开(公告)号：US20050139348A1
公开(公告)日：2005-06-30
申请号：US11023517
申请日：2004-12-29
申请人： William Lu , Ying-chi Chen , Te-tsai Chuang , Ming-shi Tsai
发明人： William Lu , Ying-chi Chen , Te-tsai Chuang , Ming-shi Tsai
IPC分类号： F04D29/60 , F28D15/00 , H05K7/20
CPC分类号： H05K7/20172 , F04D29/601
摘要： A hot swap fan includes a fan and a holding member. The fan has an air inlet, an air outlet, and a sidewall connected between the air inlet and the air outlet. The holding member is bent to form a top portion and at least one side portion and affixed on the sidewall. The top portion is formed with at least one handle portion, and part of the side portion is formed as a movable flexible portion connecting to the handle portion. The flexible portion is formed with an engaging structure to engage a casing that accommodates the hot swap fan.
摘要翻译：热插拔风扇包括风扇和保持构件。风扇具有空气入口，空气出口和连接在进气口和空气出口之间的侧壁。弯曲保持构件以形成顶部和至少一个侧部并且固定在侧壁上。顶部形成有至少一个手柄部分，并且侧部的一部分形成为连接到手柄部分的可移动柔性部分。柔性部分形成有接合结构，以接合容纳热插拔风扇的壳体。

6. 发明申请

US20050021084A1 Bone treatment device and method 审中-公开
标题翻译：骨治疗装置及方法
公开(公告)号：US20050021084A1
公开(公告)日：2005-01-27
申请号：US10843580
申请日：2004-05-12
申请人： William Lu , Keith Luk , John Leong , Shew Chow
发明人： William Lu , Keith Luk , John Leong , Shew Chow
IPC分类号： A61B17/08 , A61B17/86 , A61B17/88
CPC分类号： A61B17/864 , A61B17/7098
摘要： The present invention can provide a bone treatment device, which allows for reinforced security at the bone interface and/or for delivery of a bone treatment material into a bone portion. The bone treatment device can have a shaft member with first and second end portions. A delivery channel can be formed in the shaft member to assist administering a bone treatment material to a predetermined bone portion or tissue. The delivery channel can have a chamber formed in the shaft member and extending from the first end portion toward the second end portion. The delivery channel can also have one or more port members formed on the shaft member and communicating with the chamber.
摘要翻译：本发明可以提供一种骨治疗装置，其允许在骨界面处加强安全性和/或将骨治疗材料递送到骨部分中。骨治疗装置可以具有带有第一和第二端部的轴构件。可以在轴构件中形成输送通道，以帮助将骨治疗材料施用于预定的骨部分或组织。输送通道可以具有形成在轴构件中并从第一端部朝向第二端部延伸的室。输送通道还可以具有形成在轴构件上并与腔室连通的一个或多个端口构件。

7. 发明申请

US20080172490A1 Data scanning system and method thereof 审中-公开
标题翻译：数据扫描系统及其方法
公开(公告)号：US20080172490A1
公开(公告)日：2008-07-17
申请号：US12076668
申请日：2008-03-21
申请人： William Lu , Eric Chen , Kuang-Rong Lu , Rick Han
发明人： William Lu , Eric Chen , Kuang-Rong Lu , Rick Han
IPC分类号： G06F15/173
CPC分类号： G06F8/656
摘要： The present invention discloses a data scanning system and a method thereof for a server. The method includes steps of defining an auditing period, scanning an accessed data in a default scanning mode from the server by a user, obtaining a credit data of the user, and executing a rearranging process for resetting a reset scanning mode for the user according to the credit data when the auditing period is expired, thereby the default scanning mode being adjustable according to the credit data of the user.
摘要翻译：本发明公开了一种服务器的数据扫描系统及其方法。该方法包括以下步骤：定义审核期间，用户从服务器以默认扫描模式扫描所访问的数据，获得用户的信用数据，以及执行用于根据用户的复位扫描模式重置用户的重新排列过程当审核期间到期时的信用数据，从而可以根据用户的信用数据来调整默认扫描模式。

8. 发明申请

US20080053575A1 SHAPE MEMORY MATERIAL AND METHOD OF MAKING THE SAME 有权
标题翻译：形状记忆材料及其制备方法
公开(公告)号：US20080053575A1
公开(公告)日：2008-03-06
申请号：US11927816
申请日：2007-10-30
申请人： Kenneth Man Chee Cheung , Kelvin Yeung , William Lu , Chi Chung
发明人： Kenneth Man Chee Cheung , Kelvin Yeung , William Lu , Chi Chung
IPC分类号： C22C30/00
CPC分类号： A61B17/866 , A61B17/72 , A61B17/80 , A61B17/842 , A61B2017/00867 , C22C19/03 , C22C30/00 , C22F1/006 , Y10T428/12
摘要： The present invention relates generally to a shape memory and/or super-elastic material, such as a nickel titanium alloy. Additionally or alternatively, the present invention relates to a super-elastic or pseudo-elastic material that has an initial transition temperature Af above a body temperature. The shape memory material can have a super-elasticity or pseudo-elasticity property at a temperature below the initial transition temperature Af of the material. For example, the shape memory material can have its workable temperature for producing super-elasticity or pseudo-elasticity of about 0° C. to 15° C. below the initial transition temperature Af. The shape memory material can be malleable at a room temperature, and become super-elastic or pseudo-elastic at a body temperature. In addition, the present invention relates to a method of making a shape memory or a super-elastic material. The treatment protocols can include but not limited to thermo-mechanical, thermo-mechanical, radiation, and ternary alloying treatments.
摘要翻译：本发明一般涉及形状记忆和/或超弹性材料，例如镍钛合金。另外或替代地，本发明涉及超弹性或假弹性材料，其具有高于体温的初始转变温度A 。形状记忆材料可以在低于材料的初始转变温度A 的温度下具有超弹性或假弹性性质。例如，形状记忆材料可具有用于产生低于初始转变温度A 的约0℃至15℃的超弹性或假弹性的可工作温度。形状记忆材料可以在室温下延展，并且在体温下变得超弹性或假弹性。此外，本发明涉及一种制作形状记忆或超弹性材料的方法。处理方案可以包括但不限于热机械，热机械，辐射和三元合金化处理。

9. 发明授权

US07172390B2 Hot swap fan connecting device thereof 有权
标题翻译：热插拔风扇连接装置
公开(公告)号：US07172390B2
公开(公告)日：2007-02-06
申请号：US10962458
申请日：2004-10-13
申请人： William Lu , Ying-Chi Chen , Te-Tsai Chuang , Ming-Shi Tsai , Kuo-Cheng Lin
发明人： William Lu , Ying-Chi Chen , Te-Tsai Chuang , Ming-Shi Tsai , Kuo-Cheng Lin
IPC分类号： F04D29/64
CPC分类号： H05K7/20172
摘要： A connecting device of a hot swap fan module comprises at least one terminal and a casing. The at least one terminal is electrically connected to the fan so that, when the fan is mounted in a system, electrical connection is formed between the fan and the system. The connecting device further comprises at least one LED (light emitting diode) which is electrically connected to the fan or the at least one terminal for indicating the operating state of the fan, and at least one cover plate protruded from at least one edge of the casing so as to form the whole casing into an L or U-shaped structure. The casing is closely attached to one side face of the fan housing when the casing is assembled to the fan. The casing also has a recess for receiving those lead wires electrically connecting the terminals, the fan, and the LED.
摘要翻译：热交换风扇模块的连接装置包括至少一个端子和壳体。至少一个端子电连接到风扇，使得当风扇安装在系统中时，在风扇和系统之间形成电连接。所述连接装置还包括至少一个LED（发光二极管），其电连接到所述风扇或所述至少一个端子，用于指示所述风扇的操作状态，以及至少一个从所述风扇的至少一个边缘突出的盖板从而将整个壳体形成为L形或U形结构。当壳体组装到风扇时，壳体紧密地附接到风扇壳体的一个侧面。壳体还具有用于接收电连接端子，风扇和LED的引线的凹部。

10. 发明申请

US20080065074A1 SHAPE MEMORY LOCKING DEVICE FOR ORTHOPEDIC IMPLANTS 有权
标题翻译：用于正交植入物的形状记忆锁定装置
公开(公告)号：US20080065074A1
公开(公告)日：2008-03-13
申请号：US11853686
申请日：2007-09-11
申请人： Kelvin Yeung , William Lu , Keith Luk , Kenneth Cheung
发明人： Kelvin Yeung , William Lu , Keith Luk , Kenneth Cheung
IPC分类号： A61B17/58 , A61B17/56
CPC分类号： A61B17/7032 , A61B17/7034 , A61B2017/00867
摘要： A mechanism to connect the supporting portions of orthopaedic implants such as in the head, spine, upper limb and lower limb and thereby prevent loosening and fretting at the implant interface of an orthopaedic implant construct has been developed based on shape memory effect and super-elasticity of shape memory materials such as nickel-titanium (nitinol or NiTi) shape-memory-alloy, without the use of typical threaded fastening technique. Advantages are conferred by making the entire device, not just connecting pieces, out of shape memory alloy and having shape memory effect and super-elasticity. Heating the memory head of the device will compress the connection portion without the use of an auxiliary device (e.g. coupling member) so that the connection portion can be completely clamped down by the memory head. Further advantages are provided through the use of a two-way shape memory effect in which the memory device can be closed or tightened by heating up the ambient temperature, and re-opened by cooling down the temperature.
摘要翻译：基于形状记忆效应和超弹性，已经开发了一种机构，用于连接诸如头部，脊柱，上肢和下肢之类的矫形植入物的支撑部分，从而防止在矫形植入物构造的植入物界面松动和微动。的形状记忆材料如镍钛（镍钛诺或NiTi）形状记忆合金，而不使用典型的螺纹紧固技术。通过将整个装置，不仅仅是连接件，形状记忆合金，并具有形状记忆效应和超弹性来赋予优点。加热设备的存储头将不会使用辅助设备（例如，耦合构件）来压缩连接部分，使得连接部分可以被存储头完全夹紧。通过使用双向形状记忆效应来提供进一步的优点，其中可以通过加热环境温度来关闭或紧固存储器件，并且通过冷却温度来重新打开。

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