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1. 发明授权

US07368762B2 Heterojunction photodiode 有权
标题翻译：异质结光电二极管
公开(公告)号：US07368762B2
公开(公告)日：2008-05-06
申请号：US11031803
申请日：2005-01-06
申请人： William E. Tennant , Eric C. Piquette , Donald L. Lee , Mason L. Thomas , Majid Zandian
发明人： William E. Tennant , Eric C. Piquette , Donald L. Lee , Mason L. Thomas , Majid Zandian
IPC分类号： H01L31/00
CPC分类号： H01L31/11 , H01L31/02966 , H01L31/103 , H01L31/1032 , H01L31/108
摘要： The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2 which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.
摘要翻译：本发明提供了一种异质结光电二极管，其包括在具有带隙能量E 1 G 1的第一材料区域中形成的pn或肖特基势垒结。当反向偏置时，结形成耗尽区，该耗尽区朝着具有小于E 1 g 1的带隙能量E 2的第二材料区扩展。这有助于在第二区域中产生的信号光电流有效地流过第一区域中的结，同时使由于近接合缺陷和不完美表面的过程相关的暗电流和相关噪声最小化，这通常降低了光电二极管器件的性能。异质结光电二极管可以被包括在成像系统中，该成像系统包括一组连接点以形成成像器。

2. 发明申请

US20070034898A1 Heterojunction photodiode 有权
标题翻译：异质结光电二极管
公开(公告)号：US20070034898A1
公开(公告)日：2007-02-15
申请号：US11031803
申请日：2005-01-06
申请人： William Tennant , Eric Piquette , Donald Lee , Mason Thomas , Majid Zandian
发明人： William Tennant , Eric Piquette , Donald Lee , Mason Thomas , Majid Zandian
IPC分类号： H01L31/00
CPC分类号： H01L31/11 , H01L31/02966 , H01L31/103 , H01L31/1032 , H01L31/108
摘要： The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2 which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.
摘要翻译：本发明提供了一种异质结光电二极管，其包括在具有带隙能量E 1 G 1的第一材料区域中形成的pn或肖特基势垒结。当反向偏置时，结形成耗尽区，该耗尽区朝着具有小于E 1 g 1的带隙能量E 2的第二材料区扩展。这有助于在第二区域中产生的信号光电流有效地流过第一区域中的结，同时使由于近接合缺陷和不完美表面的过程相关的暗电流和相关噪声最小化，这通常降低了光电二极管器件的性能。异质结光电二极管可以被包括在成像系统中，该成像系统包括一组连接点以形成成像器。

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