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1. 发明授权

US09245545B1 Short yoke length coils for magnetic heads in disk drives 有权
标题翻译：用于磁盘驱动器磁头的短磁轭长度线圈
公开(公告)号：US09245545B1
公开(公告)日：2016-01-26
申请号：US13899260
申请日：2013-05-21
申请人： Western Digital (Fremont), LLC
发明人： Ut Tran , Yunhe Huang , Keith Y. Sasaki , Curtis V. Macchioni , Zhigang Bai
IPC分类号： H01B13/00 , G11B5/33
CPC分类号： G11B5/332 , G11B5/3123
摘要： A method of forming a single layer inductive coil structure includes forming a first conductive coil on a substrate, forming an insulating layer by atomic layer deposition (ALD) over the first coil and the substrate, and forming one or more additional conductive coils on each of adjacent sides of the first coil insulated from the first coil and the substrate by the insulating layer. A method of forming a stacked layer inductive coil includes forming a cavity in a substrate, forming a first coil in the cavity wherein the cavity has an atomic layer deposition (ALD) layer, forming a second coil in the cavity adjacent to the first coil and separated by the ALD layer from the first coil, forming an insulating layer over the first and second coil, and forming a third coil on the insulating layer.
摘要翻译：形成单层感应线圈结构的方法包括在衬底上形成第一导电线圈，通过在第一线圈和衬底上的原子层沉积（ALD）形成绝缘层，并且在每一个上形成一个或多个附加的导电线圈通过绝缘层与第一线圈和衬底绝缘的第一线圈的相邻侧。形成叠层感应线圈的方法包括在衬底中形成空腔，在空腔中形成第一线圈，其中空腔具有原子层沉积（ALD）层，在邻近第一线圈的空腔中形成第二线圈，以及通过ALD层与第一线圈隔开，在第一和第二线圈上形成绝缘层，并在绝缘层上形成第三线圈。

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