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1. 发明授权

US06630692B2 III-Nitride light emitting devices with low driving voltage 有权
标题翻译：具有低驱动电压的III型氮化物发光器件
公开(公告)号：US06630692B2
公开(公告)日：2003-10-07
申请号：US09870330
申请日：2001-05-29
申请人： Werner Goetz , Nathan Fredrick Gardner , Richard Scott Kern , Andrew Youngkyu Kim , Anneli Munkholm , Stephen A. Stockman , Christopher P. Kocot , Richard P. Schneider, Jr.
发明人： Werner Goetz , Nathan Fredrick Gardner , Richard Scott Kern , Andrew Youngkyu Kim , Anneli Munkholm , Stephen A. Stockman , Christopher P. Kocot , Richard P. Schneider, Jr.
IPC分类号： H01L3300
CPC分类号： H01L33/32 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.
摘要翻译：提供了具有改进性能的III-氮化物发光二极管。在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。

2. 发明授权

US06943381B2 III-nitride light-emitting devices with improved high-current efficiency 有权
标题翻译：具有改善的高电流效率的III族氮化物发光器件
公开(公告)号：US06943381B2
公开(公告)日：2005-09-13
申请号：US10769590
申请日：2004-01-30
申请人： Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
发明人： Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
IPC分类号： H01L33/00 , H01L33/32
CPC分类号： H01L33/32
摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
摘要翻译：发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。例如，III-氮化物层可以是载流子限制层。在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

3. 发明授权

US06955933B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

4. 发明授权

US07345324B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US07345324B2
公开(公告)日：2008-03-18
申请号：US11177670
申请日：2005-07-07
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

5. 发明授权

US06504171B1 Chirped multi-well active region LED 失效
标题翻译：啁啾多功能区LED
公开(公告)号：US06504171B1
公开(公告)日：2003-01-07
申请号：US09490777
申请日：2000-01-24
申请人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
发明人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
IPC分类号： H01L2906
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.
摘要翻译：发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率在有源区域的发光有源层（即，跨过有源区域）的分布曲线。啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布活性区内的组成。因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

6. 发明授权

US06525335B1 Light emitting semiconductor devices including wafer bonded heterostructures 有权
标题翻译：包括晶圆键合异质结构的发光半导体器件
公开(公告)号：US06525335B1
公开(公告)日：2003-02-25
申请号：US09707495
申请日：2000-11-06
申请人： Michael R. Krames , Christopher P. Kocot
发明人： Michael R. Krames , Christopher P. Kocot
IPC分类号： H01L2906
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/32
摘要： A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor device includes a first carrier confinement layer of a first semiconductor having a first conductivity type, an active region, and a wafer bonded interface disposed between the active region and the first carrier confinement layer. The light emitting semiconductor device may further include a second carrier confinement layer of a second semiconductor having a second conductivity type, with the active region disposed between the first carrier confinement layer and the second carrier confinement layer. The wafer bonded confinement layer provides enhanced carrier confinement and device performance.
摘要翻译：一种形成发光半导体器件的方法包括制造包括有源区的层叠层，并将包括载流子限制半导体层的结构晶片粘合到堆叠。发光半导体器件包括具有第一导电类型的第一半导体的第一载流子限制层，有源区和设置在有源区和第一载流子限制层之间的晶片接合界面。发光半导体器件还可以包括具有第二导电类型的第二半导体的第二载流子限制层，其中有源区域设置在第一载流子限制层和第二载流子限制层之间。晶片接合限制层提供增强的载体限制和装置性能。

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