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1. 发明授权

US5943357A Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication 失效
标题翻译：长波长垂直腔表面发射激光器，具有用于自动功率控制的光电检测器和制造方法
公开(公告)号：US5943357A
公开(公告)日：1999-08-24
申请号：US912605
申请日：1997-08-18
申请人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
发明人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/323 , H01S3/19 , H01L21/20 , H01S3/08
CPC分类号： H01S5/0264 , B82Y20/00 , H01S5/183 , H01S5/3202 , H01S5/32366 , H01S5/34306
摘要： A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.
摘要翻译：一种具有光电检测器的长波长VCSEL，其中所述VCSEL包括布置在第一衬底元件的第一表面上的第一和第二堆叠DBR，所述第一和第二叠层的DBR具有夹在其间的有源区和PIN光检测器，所述PIN光检测器包括设置在第二衬底元件上的第一掺杂区域衬底元件，设置在第一掺杂区域上的未掺杂区域，以及设置在未掺杂区域上的第二掺杂区域。 PIN光检测器安装在第一衬底元件的相对表面上，从而监测反向VCSEL发射。该器件被制造成允许VCSEL的自动功率控制（APC）。

2. 发明授权

US6121068A Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication 失效
标题翻译：长波长发光垂直腔表面发射激光器及其制造方法
公开(公告)号：US6121068A
公开(公告)日：2000-09-19
申请号：US47954
申请日：1998-03-26
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S3/02 , H01S5/00 , H01S5/02 , H01S5/183 , H01L21/00
CPC分类号： H01S5/1838 , H01S5/021 , H01S5/0217 , H01S5/18341 , H01S5/18369
摘要： A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
摘要翻译：用于光通信的长波长垂直腔表面发射激光器（VCSEL）和制造方法，其包括在支撑衬底上制造有源VCSEL结构，以及在硅衬底上制造高反射性DBR镜结构。 DBR镜结构包括使用SOI晶片融合技术利用外延生长技术和/或晶片结合制造的氧化硅材料和硅材料的交替层。在制造最终的VCSEL器件期间，Si / SiO 2 DBR镜结构被晶片结合到有源VCSEL结构。选择性地去除主动VCSEL结构支撑衬底，以便能够定位第二DBR反射镜堆叠。最终的VCSEL器件的特征在于发射红外光。

3. 发明授权

US6061380A Vertical cavity surface emitting laser with doped active region and method of fabrication 失效
标题翻译：具有掺杂有源区的垂直腔表面发射激光器及其制造方法
公开(公告)号：US6061380A
公开(公告)日：2000-05-09
申请号：US929515
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S5/30 , H01S3/08 , H01S3/085
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3086 , H01S5/34313
摘要： VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off.
摘要翻译：用于高速操作的VCSEL和制造方法包括衬底元件，布置在衬底元件的表面上的分布式布拉格反射器的第一叠层，与分布布拉格反射器的第一叠层的表面匹配的有源区域晶格，以及第二分布的布拉格反射器的堆叠与有源区域的表面匹配。有源区包括多个量子阱层或结构，以及多个掺杂阻挡层。势垒层的掺杂允许在任何出现横向载流子扩散之前载体的更快的复合时间。当VCSEL器件关闭时，载波的这种更快的复合时间防止关断尾部。

4. 发明授权

US6026111A Vertical cavity surface emitting laser device having an extended cavity 失效
标题翻译：具有延伸空腔的垂直腔表面发射激光器件
公开(公告)号：US6026111A
公开(公告)日：2000-02-15
申请号：US959572
申请日：1997-10-28
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/14 , H01S5/183 , H01S3/08
CPC分类号： H01S5/18308 , H01S2301/166 , H01S5/18369 , H01S5/18377 , H01S5/1838 , H01S5/18388 , H01S5/2063
摘要： An extended VCSEL structure formed of a first DBR mirror, an active region, a second DBR mirror as partial reflector, and an extended cavity provided by a transparent conductive substrate wafer fused onto the second DBR mirror. The transparent conductive substrate also serves as a convex mirror with a highly reflective dielectric coating to complete the extended cavity VCSEL structure. The use of the extended cavity makes high power single mode operation achievable because an extended cavity introduces high modal loss to the high order laser modes while supporting the lowest order single mode. The large active area allows high output power from the VCSEL.
摘要翻译：由第一DBR镜，有源区，作为部分反射器的第二DBR镜形成的扩展VCSEL结构以及由透明导电衬底晶片提供的扩展腔，所述透明导电衬底晶片融合到第二DBR镜上。透明导电基板还用作具有高反射介电涂层的凸面镜，以完成扩展腔VCSEL结构。使用扩展腔可实现高功率单模操作，因为扩展腔在支持最低阶单模时对高阶激光模式引入高模态损耗。大的有源区域允许来自VCSEL的高输出功率。

5. 发明授权

US6021146A Vertical cavity surface emitting laser for high power single mode operation and method of fabrication 失效
标题翻译：垂直腔表面发射激光器，用于高功率单模操作和制造方法
公开(公告)号：US6021146A
公开(公告)日：2000-02-01
申请号：US929377
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S3/085
CPC分类号： H01S5/18308 , B82Y20/00 , H01S2301/166 , H01S2301/176 , H01S5/18333 , H01S5/2063 , H01S5/2072 , H01S5/3054 , H01S5/34313
摘要： A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an enhanced conductivity region formed within a central portion of the second stack of distributed Bragg reflectors and within the laser emission path. The enhanced conductivity region is defined by either zinc diffusion or beryllium implants. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.
摘要翻译：一种用于大功率单模操作的VCSEL及其制造方法，包括：衬底元件，布置在衬底元件表面上的分布式布拉格反射器的第一叠层;与分布布拉格反射器的第一叠层表面匹配的有源区域晶格，以及与激活区域的表面晶格匹配的分布式布拉格反射器的第二堆叠。 VCSEL结构包括形成在分布布拉格反射器的第二堆叠的中心部分内并在激光发射路径内的增强的导电区域。增强的电导率区域由锌扩散或铍植入物定义。电触点耦合到分布布拉格反射器的第二堆叠的表面，并且电触点定位在衬底元件的表面上。

6. 发明授权

US6008067A Fabrication of visible wavelength vertical cavity surface emitting laser 失效
标题翻译：可见波长垂直腔表面发射激光器的制作
公开(公告)号：US6008067A
公开(公告)日：1999-12-28
申请号：US34485
申请日：1998-03-04
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343 , H01S3/02
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/34326
摘要： A VCSEL for emitting visible wavelength light including a GaInP substrate element, a first mirror stack with mirror pairs in a GaInP/AlInP material system lattice matched to a GaInP active region. The active region including a quantum well layer, a first barrier layer and a second barrier layer. The active region sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region adjacent a second mirror stack. The second mirror stack lattice matched to the active region and having mirror pairs in a GaInP/AlInP material system. The VCSEL device capable of emitting light in the range of 635-650 nanometers.
摘要翻译：用于发射包括GaInP衬底元件的可见波长光的VCSEL，在与GaInP有源区匹配的GaInP / AlInP材料系统晶格中具有镜对的第一反射镜叠层。有源区包括量子阱层，第一势垒层和第二势垒层。有源区被夹在与第一反射镜叠层相邻的第一包层区域和邻近第二反射镜叠层的第二包层区域之间。第二反射镜堆叠晶格与有源区域匹配，并在GaInP / AlInP材料体系中具有镜像对。能够发射635-650纳米范围内的光的VCSEL器件。

7. 发明授权

US5898722A Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication 失效
标题翻译：双波长单片集成垂直腔表面发射激光器和制造方法
公开(公告)号：US5898722A
公开(公告)日：1999-04-27
申请号：US813399
申请日：1997-03-10
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/343 , H01S5/40 , H01S5/42 , H01S3/10 , H01L21/20 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/423 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18372 , H01S5/34326 , H01S5/4087
摘要： Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabricated and masked during the formation of a long wavelength VCSEL. Each VCSEL further including mirror pairs in a AlAs/AlGaAs material system, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and capable of emitting either a short wavelength light or a long wavelength light, dependent upon design parameters. Electrical contacts are coupled to the active regions of the monolithically integrated short wavelength VCSEL and the long wavelength VCSEL. The dual wavelength monolithically integrated VCSELs fabricated as a semiconductor laser chip capable of read/write applications for both CDs and DVDs.
摘要翻译：双波长单片集成VCSEL和用于发射短波长光和长波长光的制造方法，其包括与衬底表面匹配的第一反射镜堆叠晶格。在形成长波长VCSEL的过程中制造短波长VCSEL并进行掩模。每个VCSEL还包括在AlAs / AlGaAs材料系统中的镜对，与第一反射镜叠层的表面匹配的有源区域晶格和与有源区的表面匹配的能够发射短波长的第二反射镜堆叠晶格光或长波长的光，取决于设计参数。电触点耦合到单片集成短波长VCSEL和长波长VCSEL的有源区。双波长单片集成VCSEL作为半导体激光芯片制造，能够对CD和DVD进行读/写应用。

8. 发明授权

US5883912A Long wavelength VCSEL 失效
标题翻译：长波长VCSEL
公开(公告)号：US5883912A
公开(公告)日：1999-03-16
申请号：US762490
申请日：1996-12-09
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S2302/00 , H01S5/32366 , H01S5/3427 , H01S5/34306
摘要： A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaAs active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well including one of Germanium and Nitrogen, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.
摘要翻译：一种VCSEL，用于发射长波长的光，其包括在与GaAs有源区匹配的GaAs / AlGaAs材料系统晶格中具有镜对的第一反射镜叠层，其中活性结构夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间，所述活性结构具有包括锗和氮中的一种的量子阱，以及与所述第二包层区域匹配并在GaAs / AlGaAs材料体系中具有镜对的第二反射镜堆叠晶格。

9. 发明授权

US5848086A Electrically confined VCSEL 失效
标题翻译：电离VCSEL
公开(公告)号：US5848086A
公开(公告)日：1998-12-08
申请号：US762475
申请日：1996-12-09
申请人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
发明人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/183 , H01S3/19
CPC分类号： H01S5/18313
摘要： A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101) that has dot patterned features (252 and 354). A first cladding region (113) is disposed on the first stack of distributed Bragg reflectors (109). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) disposed on the active area (117). A second stack of distributed Bragg reflectors (127) is disposed on the second cladding region (123). The dot patterned features produce an offset in the stacks of reflectors and a portion of the second stack of distributed Bragg reflectors is oxidized, using the offset, to limit the current path.
摘要翻译：具有表面（102）的半导体衬底（101），其具有设置在具有点状图案特征（252和354）的半导体衬底（101）的表面（102）上的分布布拉格反射器（109）的第一堆叠。第一包层区域（113）设置在分布布拉格反射器（109）的第一叠层上。有源区域（117）设置在第一包层区域（113）上，第二包层区域（123）设置在有源区域（117）上。分布布拉格反射器（127）的第二堆叠被布置在第二包层区域（123）上。点图案化特征在反射器堆叠中产生偏移，并且使用偏移来使分布布拉格反射器的第二堆叠的一部分被氧化以限制电流路径。

10. 发明授权

US5796769A Red light vertical cavity surface emitting laser 失效
标题翻译：红光垂直腔表面发射激光
公开(公告)号：US5796769A
公开(公告)日：1998-08-18
申请号：US699319
申请日：1996-08-19
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/34313 , H01S2302/00 , H01S5/32333 , H01S5/3407 , H01S5/34326
摘要： A stack (103) of distributed Bragg reflectors is disposed on the surface (105) of a semiconductor substrate (102). The stack (103) includes a plurality of alternating layers of material having alternating refractive indexes with the stack (103) having a first dopant type. A first cladding region (104) is disposed on the stack (103) with an active area (106) disposed on the first cladding region (104). The active area (106) includes layers of indium aluminum gallium phosphide, indium gallium arsenide phosphide, and indium aluminum gallium phosphide. A second cladding region (107) is disposed on the active area (106) with a stack (108) of distributed Bragg reflectors disposed on cladding region (107). A contact region (109) is disposed on the stack (108).
摘要翻译：分布式布拉格反射器的堆叠（103）设置在半导体衬底（102）的表面（105）上。堆叠（103）包括具有交替折射率的多个交替层，堆叠（103）具有第一掺杂剂类型。第一包层区域（104）设置在堆叠（103）上，具有设置在第一包层区（104）上的有源区（106）。有源区（106）包括铟镓磷化镓，砷化铟镓磷化铟和磷化铟镓磷酸盐层。第二包层区域（107）被布置在有源区域（106）上，其中布置布拉格反射器的堆叠（108）布置在包层区域（107）上。接触区域（109）设置在堆叠（108）上。

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