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1. 发明授权

US07553678B2 Method for detecting semiconductor manufacturing conditions 有权
标题翻译：检测半导体制造条件的方法
公开(公告)号：US07553678B2
公开(公告)日：2009-06-30
申请号：US11308343
申请日：2006-03-17
申请人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
发明人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
IPC分类号： G01R31/26
CPC分类号： G03F7/70625 , G03F7/70508 , H01L22/26 , H01L22/34
摘要： A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring the critical dimensions of the plurality of pattern areas, generating a library of relationships between the pitches and the critical dimension of the pattern areas, exposing a test wafer in an unknown manufacturing condition, finding out a relationships between the pitches and the critical dimension of the pattern areas of the test wafer, searching for a most similar relationship in the library, and detecting a set of manufacturing parameters used to expose the test wafer.
摘要翻译：一种用于检测半导体制造条件的方法包括提供具有多个图案区域的光掩模，每个图案区域具有多个具有不同间距的测试线，在不同制造条件下用光掩模曝光多个晶片，测量多个产生间距和图案区域的关键尺寸之间的关系库，使未知制造条件下的测试晶片暴露出来，找出测试晶片的图案区域的间距与临界尺寸之间的关系，在库中搜索最相似的关系，并且检测用于暴露测试晶片的一组制造参数。

2. 发明授权

US07527900B2 Reticle and optical proximity correction method 有权
标题翻译：光栅和光学邻近校正方法
公开(公告)号：US07527900B2
公开(公告)日：2009-05-05
申请号：US11164127
申请日：2005-11-10
申请人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
发明人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/32 , G03F1/62
摘要： An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
摘要翻译： OPC方法包括提供具有初级图案的初级掩模，形成具有与初级图案基本上互补的校正图案的辅助掩模，以及通过与初级掩模和辅助掩模重叠来形成掩模版。校正图案的透光率可调，以平衡初级掩模的光强分布。

3. 发明申请

US20070220458A1 METHOD FOR DETECTING SEMICONDUCTOR MANUFACTURING CONDITIONS 有权
标题翻译：用于检测半导体制造条件的方法
公开(公告)号：US20070220458A1
公开(公告)日：2007-09-20
申请号：US11308343
申请日：2006-03-17
申请人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
发明人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/70508 , H01L22/26 , H01L22/34
摘要： A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring the critical dimensions of the plurality of pattern areas, generating a library of relationships between the pitches and the critical dimension of the pattern areas, exposing a test wafer in an unknown manufacturing condition, finding out a relationships between the pitches and the critical dimension of the pattern areas of the test wafer, searching for a most similar relationship in the library, and detecting a set of manufacturing parameters used to expose the test wafer.
摘要翻译：一种用于检测半导体制造条件的方法包括提供具有多个图案区域的光掩模，每个图案区域具有多个具有不同间距的测试线，在不同制造条件下用光掩模曝光多个晶片，测量多个产生间距和图案区域的关键尺寸之间的关系库，使未知制造条件下的测试晶片暴露出来，找出测试晶片的图案区域的间距与临界尺寸之间的关系，在库中搜索最相似的关系，并且检测用于暴露测试晶片的一组制造参数。

4. 发明申请

US20070167110A1 MULTI-ZONE CARRIER HEAD FOR CHEMICAL MECHANICAL POLISHING AND CMP METHOD THEREOF 审中-公开
标题翻译：用于化学机械抛光的多区域载体头及其CMP方法
公开(公告)号：US20070167110A1
公开(公告)日：2007-07-19
申请号：US11306913
申请日：2006-01-16
申请人： Yu-Hsiang Tseng , Kai-Hung Alex See , Mei-Sheng Zhou , Jin Yu , Zheng Zou , Wen-Zhan Zhou
发明人： Yu-Hsiang Tseng , Kai-Hung Alex See , Mei-Sheng Zhou , Jin Yu , Zheng Zou , Wen-Zhan Zhou
IPC分类号： B24B51/00
CPC分类号： B24B37/30
摘要： A multi-zone carrier head includes a housing; a retaining ring secured to a lower edge of the housing; a backing plate having a plurality of non-concentric pressure zones defined by a plurality of isolated apertures on the backing plate; wherein the backing plate has a wafer side and a non-wafer side, the wafer side facing a backside of a wafer during a CMP operation; and a plurality of pneumatic bladder for independently controlling pressure exerted in the respective non-concentric pressure zones on the backside of the wafer during the CMP operation.
摘要翻译：多区域承载头包括壳体; 保持环固定到壳体的下边缘; 背板，其具有由背板上的多个隔离孔限定的多个非同心压力区; 其中所述背板具有晶片侧和非晶片侧，所述晶片侧在CMP操作期间面向晶片的背面; 以及多个气囊，用于在CMP操作期间独立地控制施加在晶片背面上的各个非同心压力区中的压力。

5. 发明申请

US20070105023A1 RETICLE AND OPTICAL PROXIMITY CORRECTION METHOD 有权
标题翻译：反向和光学近似校正方法
公开(公告)号：US20070105023A1
公开(公告)日：2007-05-10
申请号：US11164127
申请日：2005-11-10
申请人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
发明人： Wen-Zhan Zhou , Jin Yu , Kai-Hung Alex See
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/32 , G03F1/62
摘要： An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
摘要翻译： OPC方法包括提供具有初级图案的初级掩模，形成具有与初级图案基本上互补的校正图案的辅助掩模，以及通过与初级掩模和辅助掩模重叠来形成掩模版。校正图案的透光率可调，以平衡初级掩模的光强分布。

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