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1. 发明授权

US07650684B2 Method for fabricating a magnetic head including a read sensor 失效
标题翻译：一种用于制造包括读取传感器的磁头的方法
公开(公告)号：US07650684B2
公开(公告)日：2010-01-26
申请号：US10892581
申请日：2004-07-16
申请人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
发明人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
IPC分类号： G11B5/127 , G11B5/33 , C23C16/00
CPC分类号： B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A method for fabricating a magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. The method includes the plasma smoothing of the upper surface of the pinned magnetic layer prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
摘要翻译：一种用于制造磁头的方法，该磁头包括具有传感器层堆叠的自旋阀传感器，所述传感器层堆叠包括钉扎磁性层，形成在钉扎磁性层上的间隔层和形成在间隔层上的自由磁性层。在优选实施例中，间隔层由CuOx构成。该方法包括在沉积间隔层之前对被钉扎的磁性层的上表面的等离子体平滑化，优选的等离子体气体是氩和氧的混合物。

2. 发明授权

US06937448B2 Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures 失效
标题翻译：旋转阀具有在多层自由和固定层结构之间具有规定的耦合场强的氧化铜隔离层
公开(公告)号：US06937448B2
公开(公告)日：2005-08-30
申请号：US10294109
申请日：2002-11-13
申请人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
发明人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
摘要翻译：一种磁头，包括具有传感器层堆叠的自旋阀传感器，所述传感器层堆叠包括被钉扎的磁性层，形成在钉扎的磁性层上的间隔层和形成在间隔层上的自由磁性层。在一个优选的实施方案中，间隔层由CuO x X组成。在沉积间隔层之前进行钉扎磁性层的上表面的等离子体平滑化，优选的等离子体气体是氩和氧的混合物。

3. 发明授权

US06519120B1 Ap-pinned spin valves with enhanced GMR and thermal stability 失效
标题翻译： Ap-pined自旋阀具有增强的GMR和热稳定性
公开(公告)号：US06519120B1
公开(公告)日：2003-02-11
申请号：US09632014
申请日：2000-08-02
申请人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , Robert John Wilson
发明人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , Robert John Wilson
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996
摘要： An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni—Fe—Cr or Ni—Cr film and the AFM layer is preferably Ni—Mn. The non-magnetic Ni—Fe—Cr seed layer results in improved grain structure in the deposited layers enhancing the GMR coefficients and the thermal stability of the SV sensors. The improved thermal stability enables use of Ni—Mn with its high blocking temperature and strong pinning field as the AFM layer material without SV sensor performance degradation from the high temperature anneal step needed to develop the desired exchange coupling.
摘要翻译：具有优选结构的SV传感器，其中种子层是非磁性Ni-Fe-Cr或Ni-Cr膜，AFM层优选为Ni-Mn，其中底物/种子/自由/间隔物/固定/ AFM /帽。非磁性Ni-Fe-Cr种子层导致沉积层中改善的晶粒结构增强了GMR系数和SV传感器的热稳定性。改进的热稳定性使得具有高阻挡温度和强钉扎场的Ni-Mn作为AFM层材料而不会由于开发所需交换耦合所需的高温退火步骤而降低SV传感器性能。

4. 发明授权

US06873499B2 Read head having high resistance soft magnetic flux guide layer for enhancing read sensor efficiency 失效
标题翻译：读头具有高电阻软磁通导向层，可提高读取传感器的效率
公开(公告)号：US06873499B2
公开(公告)日：2005-03-29
申请号：US09769165
申请日：2001-01-24
申请人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
发明人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3109 , B82Y10/00 , G11B5/3919 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Msρ of the flux guide layer is greater than 50 times the Msρ of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and ρ is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.
摘要翻译：读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。这增加了读取传感器的效率。助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。由于磁通导向器高阻电流分流损耗几乎消除。

5. 发明授权

US06785099B2 Read gap improvements through high resistance magnetic shield layers 失效
标题翻译：通过高电阻磁屏蔽层读取间隙改进
公开(公告)号：US06785099B2
公开(公告)日：2004-08-31
申请号：US10068231
申请日：2002-02-04
申请人： Wen-Yaung Lee , Tsann Lin , Daniele Mauri
发明人： Wen-Yaung Lee , Tsann Lin , Daniele Mauri
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/09 , G11B5/3143 , G11B5/3146 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A read head is provided having having ultrathin read gap layers with improved insulative properties between a magnetoresistive sensor and ferromagnetic shield layers. The read head comprises a magnetoresistive sensor with first and second shield cap layers made of high resistivity permeable magnetic material formed between the first and second ferromagnetic shields and the first and second insulative read gap layers, respectively. The shield cap layers made of Fe—Hf—Ox material, or alternatively, the Mn—Zn ferrite material provide highly resistive or insulating soft ferromagnetic layers which add to the electrically insulative read gap layers to provide increased electrical insulation of the spin valve sensor from the metallic ferromagnetic shields while not adding to the magnetic read gap of the read head. The extra insulation provided by the highly resistive shield cap layers makes it possible to use ultrathin insulative first and second read gap layers without increased risk of electrical shorting between the spin valve sensor and the ferromagnetic first and second shields.
摘要翻译：提供读头，其具有在磁阻传感器和铁磁屏蔽层之间具有改进的绝缘性能的超薄读取间隙层。读头包括磁阻传感器，其具有由分别形成在第一和第二铁磁屏蔽之间的高电阻率可渗透磁性材料制成的第一和第二屏蔽盖层以及第一和第二绝缘读取间隙层。由Fe-Hf-Ox材料制成的屏蔽帽层，或者Mn-Zn铁氧体材料提供高电阻或绝缘的软铁磁层，这些层叠电绝缘读取间隙层以提供自旋阀传感器的增加的电绝缘金属铁磁屏蔽，同时不增加读头的磁读取间隙。由高电阻屏蔽盖层提供的额外的绝缘使得可以使用超薄绝缘的第一和第二读取间隙层，而不增加自旋阀传感器和铁磁性第一和第二屏蔽之间的电短路的风险。

6. 发明授权

US06223420B1 Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency 失效
标题翻译：制造具有高阻软磁通导向层的读头的方法，以提高读取传感器的效率
公开(公告)号：US06223420B1
公开(公告)日：2001-05-01
申请号：US09206016
申请日：1998-12-04
申请人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
发明人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
IPC分类号： G11B542
CPC分类号： G11B5/3109 , B82Y10/00 , G11B5/3919 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Ms&rgr; of the flux guide layer is greater than 50 times the Ms&rgr; of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and &rgr; is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.
摘要翻译：读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。这增加了读取传感器的效率。助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。由于磁通导向器高阻电流分流损耗几乎消除。

7. 发明授权

US6141191A Spin valves with enhanced GMR and thermal stability 失效
标题翻译：具有增强的GMR和热稳定性的旋转阀
公开(公告)号：US6141191A
公开(公告)日：2000-10-31
申请号：US986311
申请日：1997-12-05
申请人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , Robert John Wilson
发明人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , Robert John Wilson
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996
摘要： An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni--Fe--Cr or Ni--Cr film and the AFM layer is preferably Ni--Mn. The non-magnetic Ni--Fe--Cr seed layer results in improved grain structure in the deposited layers enhancing the GMR coefficients and the thermal stability of the SV sensors. The improved thermal stability enables use of Ni--Mn with its high blocking temperature and strong pinning field as the AFM layer material without SV sensor performance degradation from the high temperature anneal step needed to develop the desired exchange coupling.
摘要翻译：具有优选结构的SV传感器，其中种子层是非磁性Ni-Fe-Cr或Ni-Cr膜，AFM层优选为Ni-Mn，其中底物/种子/自由/间隔物/固定/ AFM /帽。非磁性Ni-Fe-Cr种子层导致沉积层中改善的晶粒结构增强了GMR系数和SV传感器的热稳定性。改进的热稳定性使得具有高阻挡温度和强钉扎场的Ni-Mn作为AFM层材料而不会由于开发所需交换耦合所需的高温退火步骤而降低SV传感器性能。

8. 发明申请

US20130164562A1 TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH A LONG DIFFUSION PATH AND EX-SITU INTERFACES IN A SENSE LAYER STRUCTURE 有权
标题翻译： TUNNELING MAGNETORESISTANCE（TMR）阅读传感器与长扩散路径和EX-SITU接口在感觉层结构
公开(公告)号：US20130164562A1
公开(公告)日：2013-06-27
申请号：US13335642
申请日：2011-12-22
申请人： Tsann Lin
发明人： Tsann Lin
IPC分类号： G11B5/39 , H01F7/06
CPC分类号： G11B5/3906 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/398 , G11B5/40 , H01F10/3254 , H01F10/3295 , Y10T29/4902 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
摘要翻译：本发明提供了一种在感应层结构中具有长扩散路径和非原位界面的隧道磁阻（TMR）读取传感器。感测层结构包括优选由铁磁Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层和优选由铁磁性Ni-Fe膜形成的第三感测层。感应层结构具有长的扩散路径（定义为第一和第二感测层的总厚度）和用于抑制Ni原子的不期望的扩散的非原位界面。或者，感测层结构包括优选由铁磁性Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层，优选由铁磁性Co-Fe-B膜形成的第三感测层， B-Hf膜，以及优选由铁磁性Ni-Fe膜形成的第四感测层。

9. 发明授权

US08325450B2 Low resistance tunnel magnetoresistance (TMR) structure 有权
标题翻译：低电阻隧道磁阻（TMR）结构
公开(公告)号：US08325450B2
公开(公告)日：2012-12-04
申请号：US12332010
申请日：2008-12-10
申请人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
发明人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
IPC分类号： G01B5/66
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , Y10T428/1114
摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.
摘要翻译：一个实施例中的磁性结构包括隧道势垒层; 自由层以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。还介绍了其他系统和方法。

10. 发明授权

US07796364B2 Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield 有权
标题翻译：在底部屏蔽上外延生长的电流垂直于平面的传感器
公开(公告)号：US07796364B2
公开(公告)日：2010-09-14
申请号：US11618527
申请日：2006-12-29
申请人： Tsann Lin
发明人： Tsann Lin
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/3272 , H01F41/302
摘要： A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a ferromagnetic shield layer and disposing one or more seed layers on the ferromagnetic shield layer. The method also includes disposing a pinning layer on the one or more seed layers, wherein the pinning layer excludes PtMn, and disposing a pinned layer on the pinning layer. The shield layer, each of the one or more seed layers, the pinning layer, and the pinned layer are comprised of compounds having face-centered-cubic structures.
摘要翻译：电流垂直平面（CPP）磁阻传感器和形成电流 - 垂直平面（CPP）磁阻传感器的方法。该方法包括提供铁磁屏蔽层并在铁磁屏蔽层上设置一个或多个晶种层。所述方法还包括在所述一个或多个晶种层上设置钉扎层，其中所述钉扎层排除PtMn，并且将钉扎层设置在钉扎层上。屏蔽层，一个或多个种子层中的每一个，钉扎层和被钉扎层由具有面心立方结构的化合物组成。

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