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1. 发明申请

US20080157398A1 Semiconductor device package having pseudo chips 审中-公开
标题翻译：具有伪芯片的半导体器件封装
公开(公告)号：US20080157398A1
公开(公告)日：2008-07-03
申请号：US11819193
申请日：2007-06-26
申请人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Wen-Ping Yang
发明人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Wen-Ping Yang
IPC分类号： H01L23/48
CPC分类号： H01L25/50 , H01L21/6835 , H01L23/3128 , H01L23/49827 , H01L23/5389 , H01L24/06 , H01L24/24 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/82 , H01L24/96 , H01L25/03 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L2221/68345 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/24 , H01L2224/24137 , H01L2224/24227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48157 , H01L2224/48227 , H01L2224/484 , H01L2224/49171 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2224/45099 , H01L2924/00 , H01L2924/01026 , H01L2924/00012
摘要： The present invention provides a semiconductor device package having pseudo chips structure comprising a first substrate with die receiving through holes formed thereon; a first die having first bonding pads and a second die having second bonding pads disposed within the die receiving through holes, respectively; an adhesion material formed in the gap between the first and second die and sidewalls of the die receiving though holes of the first substrate; redistribution lines formed to couple the first contact pads formed on the first substrate to the first bonding pads and the second bonding pads, respectively; and a protection layer formed on the redistribution lines, the first die, the second die and the first substrate.
摘要翻译：本发明提供了一种具有伪芯片结构的半导体器件封装，包括：第一衬底，其具有形成在其上的通孔; 具有第一接合焊盘的第一管芯和分别设置在所述管芯内的第二接合焊盘的第二管芯，形成在所述第一和第二管芯之间的间隙中的粘合材料和所述第一基板的贯穿孔的所述管芯的侧壁; 再分配线被形成为分别将形成在第一基板上的第一接触焊盘耦合到第一接合焊盘和第二接合焊盘; 以及形成在再分配线上的保护层，第一管芯，第二管芯和第一基板。

2. 发明申请

US20090008729A1 IMAGE SENSOR PACKAGE UTILIZING A REMOVABLE PROTECTION FILM AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：使用可拆卸保护膜的图像传感器包装及其制造方法
公开(公告)号：US20090008729A1
公开(公告)日：2009-01-08
申请号：US11772861
申请日：2007-07-03
申请人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Wen-Ping Yang
发明人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Wen-Ping Yang
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14618 , H01L27/14627 , H01L27/14687 , H01L2224/48091 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： The present invention discloses a structure of image sensor package utilizing a removable protection film. The structure comprises a substrate with a die receiving cavity and inter-connecting through holes. Terminal pads are formed under the inter-connecting through holes and metal pads are formed on an upper surface of the substrate. A die is disposed within the die receiving cavity by an adhesion material. Bonding pads are formed on the upper edge of the die. Bonding wires are coupled to the metal pads and the bonding pads. A protection layer is formed on the micro lens area to protect the micro lens from particle contamination. A removable protection film is formed over the protection layer to protect the micro lens from water, oil, dust or temporary impact during the packaging and assembling process.
摘要翻译：本发明公开了利用可移除保护膜的图像传感器封装的结构。该结构包括具有模具接收腔和相互连接的通孔的基板。端子焊盘形成在相互连接的通孔之下，金属焊盘形成在基板的上表面上。模具通过粘合材料设置在模具容纳腔内。接合垫形成在模具的上边缘上。接合线耦合到金属焊盘和焊盘。在微透镜区域上形成保护层以保护微透镜免受颗粒污染。在保护层上形成可移除的保护膜，以在包装和组装过程中保护微透镜免受水，油，灰尘或临时冲击。

3. 发明授权

US07525139B2 Image sensor with a protection layer 有权
标题翻译：具有保护层的图像传感器
公开(公告)号：US07525139B2
公开(公告)日：2009-04-28
申请号：US11025746
申请日：2004-12-29
申请人： Wen-Kun Yang , Chin-Chen Yang , Wen-Ping Yang , Wen-Bin Sun , Chao-nan Chou , His-Ying Yuan , Jui-Hsien Chang
发明人： Wen-Kun Yang , Chin-Chen Yang , Wen-Ping Yang , Wen-Bin Sun , Chao-nan Chou , His-Ying Yuan , Jui-Hsien Chang
IPC分类号： H01L31/062
CPC分类号： H01L27/14687 , H01L21/561 , H01L24/97 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L31/0203 , H01L31/02325 , H01L2224/04105 , H01L2224/20 , H01L2224/211 , H01L2224/24137 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H05K1/189 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.
摘要翻译：图像传感器管芯包括衬底和形成在衬底上的图像传感器阵列。微透镜设置在图像传感器阵列上。在微透镜上形成保护层，以防止微透镜受到颗粒的抑制。

4. 发明申请

US20050242409A1 Imagine sensor with a protection layer 有权
标题翻译：想象一下具有保护层的传感器
公开(公告)号：US20050242409A1
公开(公告)日：2005-11-03
申请号：US11025746
申请日：2004-12-29
申请人： Wen-Kun Yang , Chin-Chen Yang , Wen-Ping Yang , Wen-Bin Sun , Chao-nan Chou , His-Ying Yuan , Jui-Hsien Chang
发明人： Wen-Kun Yang , Chin-Chen Yang , Wen-Ping Yang , Wen-Bin Sun , Chao-nan Chou , His-Ying Yuan , Jui-Hsien Chang
IPC分类号： H01L27/14 , H01L21/00 , H01L21/50 , H01L21/56 , H01L23/12 , H01L23/50 , H01L27/144 , H01L27/146 , H01L29/06 , H01L31/00 , H01L31/0203 , H01L31/0232 , H01L31/10 , H04N5/225 , H05K1/18
CPC分类号： H01L27/14687 , H01L21/561 , H01L24/97 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L31/0203 , H01L31/02325 , H01L2224/04105 , H01L2224/20 , H01L2224/211 , H01L2224/24137 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H05K1/189 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.
摘要翻译：图像传感器管芯包括衬底和形成在衬底上的图像传感器阵列。微透镜设置在图像传感器阵列上。在微透镜上形成保护层，以防止微透镜受到颗粒的抑制。

5. 发明申请

US20090166873A1 INTER-CONNECTING STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF THE SAME 审中-公开
标题翻译：半导体器件封装的连接结构及其相关方法
公开(公告)号：US20090166873A1
公开(公告)日：2009-07-02
申请号：US11965157
申请日：2007-12-27
申请人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Mon-Chin Tsai
发明人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee , Mon-Chin Tsai
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L27/14618 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L24/24 , H01L24/29 , H01L24/82 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L2224/12105 , H01L2224/24137 , H01L2224/73267 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2225/06582 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/078 , H01L2924/09701 , H01L2924/14 , H01L2924/15311 , H01L2924/3011 , H01L2924/3512 , H01L2924/00
摘要： The interconnecting structure for a semiconductor die includes a die having bonding pads on an active surface; a core attached the side wall (edge) of the die by adhesion material; an isolating base adhered on the active surface of the die by adhesion glue; a through silicon via (TSV) open from the back side of the die to expose the bonding pads; a build up layer coupled between the bonding pads to terminal metal pads by the through silicon via; solder balls melted on terminal pads, wherein the terminal pads located on the core and/or the die.
摘要翻译：半导体管芯的互连结构包括：在有源表面上具有接合焊盘的管芯; 通过粘合材料将芯片的侧壁（边缘）附着在芯上; 通过粘合胶粘在模具的活性表面上的隔离基体; 从芯片的背面开口的通硅通孔（TSV）露出接合焊盘; 通过硅通孔将接合焊盘耦合到端子金属焊盘的堆积层; 焊球在端子焊盘上熔化，其中位于芯和/或模具上的端子焊盘。

6. 发明申请

US20080118707A1 METHOD AND STRUCTURE OF PATTERN MASK FOR DRY ETCHING 审中-公开
标题翻译：用于干蚀刻的图案掩模的方法和结构
公开(公告)号：US20080118707A1
公开(公告)日：2008-05-22
申请号：US11562442
申请日：2006-11-22
申请人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee
发明人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee
IPC分类号： B32B3/00
CPC分类号： H01L27/14618 , H01L24/03 , H01L27/14683 , H01L2224/04042 , H01L2224/85013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01094 , H01L2924/30107 , H01L2924/3025 , Y10T428/24355
摘要： The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.
摘要翻译：本发明提供蚀刻工艺的结构。该结构具有用于保护晶片的区域不被蚀刻的掩模和附着在掩模的下表面下方的密封环。掩模具有至少一个空气开口以暴露待蚀刻的区域。此外，掩模通过密封环附着在晶片上。此外，本发明还提供一种形成干法蚀刻工艺的掩模的方法。首先，本发明包括提供基材并在基材的两侧上涂覆掩模材料的步骤。下一步是将掩模材料图案化以形成开口。随后，通过开口蚀刻基材以产生至少一个掩模开口和掩模腔。最后，执行去除掩模材料。

7. 发明申请

US20080116169A1 METHOD AND STRUCTURE OF PATTERN MASK FOR DRY ETCHING 审中-公开
公开(公告)号：US20080116169A1
公开(公告)日：2008-05-22
申请号：US11837738
申请日：2007-08-13
申请人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee
发明人： Wen-Kun Yang , Jui-Hsien Chang , Chi-Chen Lee
IPC分类号： C03C25/68
CPC分类号： H01L27/14618 , H01L24/03 , H01L27/14683 , H01L2224/04042 , H01L2224/85013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01094 , H01L2924/30107 , H01L2924/3025 , Y10T428/24355
摘要： The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.

8. 发明申请

US20080268647A1 METHOD OF PLASMA ETCHING WITH PATTERN MASK 审中-公开
标题翻译：等离子体蚀刻与图案掩模的方法
公开(公告)号：US20080268647A1
公开(公告)日：2008-10-30
申请号：US12134249
申请日：2008-06-06
申请人： Wen-Kun Yang , Jui-Hsien Chang , Wen-Bin Sun
发明人： Wen-Kun Yang , Jui-Hsien Chang , Wen-Bin Sun
IPC分类号： H01L21/302
CPC分类号： H01L21/321 , H01L21/31144
摘要： The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metal oxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide.
摘要翻译：本发明提供了一种使用图案掩模进行等离子体蚀刻的方法。在晶片的两个部分中有两种不同的器件，包括硅和砷化镓（GaAs）。硅部分用于一般半导体。而GaAs部分用于RF器件。硅中的焊盘材料通常是金属，金属氧化物通常形成在焊盘上。金属氧化物对于进一步的处理是不需要的; 因此应该通过等离子体蚀刻工艺去除。将膜附着到衬底的表面，暴露出需要蚀刻的区域。然后将掩模附着并对准到膜上，从而暴露该区域对蚀刻的需要。然后在衬底上施加等离子体干蚀刻以去除金属氧化物。

9. 发明申请

US20080261346A1 SEMICONDUCTOR IMAGE DEVICE PACKAGE WITH DIE RECEIVING THROUGH-HOLE AND METHOD OF THE SAME 审中-公开
标题翻译：具有接收孔的DIEMIC半导体图像装置及其方法
公开(公告)号：US20080261346A1
公开(公告)日：2008-10-23
申请号：US12165876
申请日：2008-07-01
申请人： Wen-Kun Yang , Jui-Hsien Chang , Tung-chuan Wang
发明人： Wen-Kun Yang , Jui-Hsien Chang , Tung-chuan Wang
IPC分类号： H01L31/18
CPC分类号： H01L27/14618 , H01L24/24 , H01L24/82 , H01L24/97 , H01L27/14627 , H01L27/14685 , H01L2224/04105 , H01L2224/12105 , H01L2224/24227 , H01L2924/01019 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/00
摘要： The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.
摘要翻译：本发明公开了一种包装结构，包括：具有模具接收通孔的基板，连接通孔结构和第一接触垫; 具有设置在模具接收通孔内的微透镜区域的模具; 透明盖覆盖微透镜区域; 形成在模具下方并填充在模具和模具的侧壁之间的间隙中的周围材料; 形成在所述管芯和所述基板上的电介质层; 形成在电介质层上并耦合到第一接触焊盘的再分布层（RDL）; 形成在RDL上的保护层; 以及第二接触焊盘，其形成在所述基板的下表面和所述连接通孔结构的下方。

10. 发明授权

US07423335B2 Sensor module package structure and method of the same 有权
标题翻译：传感器模块的封装结构和方法相同
公开(公告)号：US07423335B2
公开(公告)日：2008-09-09
申请号：US11954087
申请日：2007-12-11
申请人： Wen-Kun Yang , Jui-Hsien Chang
发明人： Wen-Kun Yang , Jui-Hsien Chang
IPC分类号： H01L23/02 , H01L29/22 , H01L29/227 , H01L33/00 , H01L23/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/14618 , H01L24/24 , H01L27/14634 , H01L27/14683 , H01L2224/04105 , H01L2224/12105 , H01L2224/32225 , H01L2224/73267 , H01L2924/014 , H01L2924/14 , H04N5/2251 , H04N5/2257 , H01L2924/00
摘要： An image sensor multi-chips package structure, includes a first package including a first chip with image sensors having first bonding pads and micro lens on a first active surface, a first die receiving window and first conductive inter-connecting through holes penetrated from a first upper contact pads on a first upper surface of the first chip to a first lower contact pads on a first lower surface of the first chip, wherein a first upper build up layer on the active surface of the first chip coupling from the first bonding pads to the first upper contact pads; a second package comprising a second chip having second bonding pads on a second active surface, a second die receiving window and second conductive inter-connecting through holes penetrated from a second upper contact pads of a second upper surface of the second chip to a second lower contact pads on a second lower surface of the second chip, wherein a second upper build up layers on the second upper surface for coupling from the second bonding pads to the second upper contact pads, and second lower build up layers under the second lower surface for coupling from the second lower contact pads to terminal pads located under the second lower surface; and inter-connecting structures coupled between the first lower contact pads to the second upper contact pads.
摘要翻译：一种图像传感器多芯片封装结构，包括第一封装，其包括具有第一焊盘和第一有源表面上的微透镜的图像传感器的第一芯片，第一裸片接收窗和第一导电互连通孔，所述第一芯片的第一上表面上的上接触焊盘到所述第一芯片的第一下表面上的第一下接触焊盘，其中所述第一芯片的所述有源表面上的第一上层叠层从所述第一焊盘耦合到第一个上接触垫; 第二封装，包括具有在第二有源表面上的第二接合焊盘的第二芯片，第二管芯接收窗口和从第二芯片的第二上表面的第二上接触焊盘穿入的第二导电互连通孔，所述第二芯片的第二下表面上的接触焊盘，其中在所述第二上表面上的用于从所述第二接合焊盘耦合到所述第二上触点焊盘的第二上层叠层，以及在所述第二下表面下方的第二下堆积层，从所述第二下接触焊盘耦合到位于所述第二下表面下方的端子焊盘; 以及耦合在所述第一下接触焊盘与所述第二上接触焊盘之间的连接结构。

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