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1. 发明授权

US06464778B2 Tungsten deposition process 有权
标题翻译：钨沉积工艺
公开(公告)号：US06464778B2
公开(公告)日：2002-10-15
申请号：US09761881
申请日：2001-01-17
申请人： Wen Pin Chiu
发明人： Wen Pin Chiu
IPC分类号： C30B2514
CPC分类号： C23C16/14 , H01L21/28556
摘要： A tungsten deposition process. A crystal growth step is carried out in a reaction chamber to form a tungsten crystal layer over a substrate using tungsten hexafluoride, silane and nitrogen as reactive gases. An intermediate step is conducted such that the supply of tungsten hexafluoride to the reaction chamber is cut but the supply of silane is continued. Furthermore, nitrogen is passed into the reaction chamber selectively. A main deposition step is finally conducted to form a tungsten layer over the tungsten crystal layer using tungsten hexafluoride, hydrogen and nitrogen as reactive gases.
摘要翻译：钨沉积工艺。在反应室中进行晶体生长步骤以在使用六氟化钨，硅烷和氮作为反应气体的基板上形成钨晶体层。进行中间步骤，使得向反应室供应六氟化钨，但是继续供应硅烷。此外，氮气选择性地进入反应室。最后进行主沉积步骤，使用六氟化钨，氢和氮作为反应气体在钨晶体层上形成钨层。

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