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    • 7. 发明申请
    • MOS circuit arrangement
    • MOS电路布置
    • US20060113602A1
    • 2006-06-01
    • US10999722
    • 2004-11-29
    • Cheng-Yu FangWei-Jung ChenSheng-Ti LeeChien-Peng YuYi-Cheng Wang
    • Cheng-Yu FangWei-Jung ChenSheng-Ti LeeChien-Peng YuYi-Cheng Wang
    • H01L29/94
    • H01L27/0266H01L29/78
    • A MOS circuit arrangement includes a silicon substrate, a semiconductor device, a field oxide layer, and a poly-protective layer. The silicon substrate has a conductive doping incorporated therein, wherein the semiconductor device is electrically connected with the silicon substrate. The field oxide layer is formed on the silicon substrate at a position spaced apart from the terminal of the semiconductor device to form an active region between the field oxide layer and the semiconductor device. The poly-protective layer deposited on the active region to communicate the field oxide layer with the terminal of the semiconductor device, wherein the poly-protective layer provides a junction breakdown path between the semiconductor device and the silicon substrate to increase a junction breakdown voltage of the semiconductor device.
    • MOS电路装置包括硅衬底,半导体器件,场氧化物层和多保护层。 硅衬底具有掺入其中的导电掺杂,其中半导体器件与硅衬底电连接。 场氧化物层形成在硅衬底上与半导体器件的端子间隔开的位置处,以在场氧化物层和半导体器件之间形成有源区。 沉积在有源区上的多晶硅保护层将场氧化物层与半导体器件的端子连通,其中多晶硅保护层在半导体器件和硅衬底之间提供结击穿通路径,以增加晶体管的击穿电压 半导体器件。