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    • 6. 发明申请
    • BUMP STRUCTURE AND METHOD FOR FABRICATING THE SAME
    • BUMP结构及其制作方法
    • US20100052160A1
    • 2010-03-04
    • US12255416
    • 2008-10-21
    • Wei-Hao SUNPao-Yun Tang
    • Wei-Hao SUNPao-Yun Tang
    • H01L23/52H01L21/44
    • G06Q30/00G06Q30/0601H01L24/11H01L2924/14H01L2924/15788H01L2924/00
    • The present invention discloses a bump structure and a method for fabricating the same. The bump structure of the present invention comprises a semiconductor substrate having a plurality of connection pads; a passivation layer covering the substrate and having openings each corresponding to one connection pad, wherein the openings reveal a portion of each connection pad to form a plurality of electrical-connection areas; an elastic layer formed on the passivation layer; and a plurality of bumps each formed corresponding to one electric-connection area and extending to the elastic layer, whereby the elasticity and deformability of the bumps is enhanced. The present invention uses a larger-texture (≧20 μm) patterning process to fabricate an appropriate patterned elastic layer (having parallel lines, strips, or saw teeth) to enhance the elasticity and deformability of the bumps, whereby the bump structure of the present invention can apply to a fine-pitch IC.
    • 本发明公开了一种凸块结构及其制造方法。 本发明的凸点结构包括具有多个连接焊盘的半导体衬底; 覆盖所述基板并具有各自对应于一个连接焊盘的开口的钝化层,其中所述开口露出每个连接焊盘的一部分以形成多个电连接区域; 形成在钝化层上的弹性层; 以及多个凸起,每个凸起对应于一个电连接区域形成并延伸到弹性层,从而提高了凸块的弹性和变形能力。 本发明使用较大纹理(≥20μm)的图案化工艺来制造适当的图案化弹性层(具有平行的线条,条带或锯齿)以增强凸块的弹性和变形能力,由此本发明的凸起结构 本发明可应用于精细间距IC。