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1. 发明授权

US07435355B2 Liquid-based gravity-driven etching-stop technique for controlling structure dimension 有权
标题翻译：液体重力驱动蚀刻停止技术，用于控制结构尺寸
公开(公告)号：US07435355B2
公开(公告)日：2008-10-14
申请号：US11242866
申请日：2005-10-05
申请人： Wei-Chin Lin , Hui-Ling Chang , Ching-Hsiang Tsai , Chao-Chiun Liang , Gen-Wen Hsieh , Yuh-Wen Lee
发明人： Wei-Chin Lin , Hui-Ling Chang , Ching-Hsiang Tsai , Chao-Chiun Liang , Gen-Wen Hsieh , Yuh-Wen Lee
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/02052 , B81B2201/12 , B81C1/00626 , B81C2201/0142 , G01Q60/38
摘要： A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.
摘要翻译：提供了一种用于控制结构尺寸的液体重力驱动蚀刻停止技术，其中与蚀刻停止溶液配合的相反蚀刻沟槽用于控制晶片级上的微结构的尺寸。在一个实施例中，围绕微结构的相对的沟槽分别蚀刻在晶片的侧面上，并且在其上的晶片侧面上的沟槽深度等于微结构的设计尺寸。相反，不需要在芯片的背面限定沟槽深度。在制造过程的最后步骤中，当器件被蚀刻时，使得侧面上的沟槽彼此连通以自动地将微结构与全部晶片分离，从而从蚀刻剂移动到蚀刻停止溶液中以停止蚀刻。

2. 发明申请

US20060264058A1 Liquid-based gravity-driven etching-stop technique for controlling structure dimension 有权
标题翻译：液体重力驱动蚀刻停止技术，用于控制结构尺寸
公开(公告)号：US20060264058A1
公开(公告)日：2006-11-23
申请号：US11242866
申请日：2005-10-05
申请人： Wei-Chin Lin , Hui-Ling Chang , Ching-Hsiang Tsai , Chao-Chiun Liang , Gen-Wen Hsieh , Yuh-Wen Lee
发明人： Wei-Chin Lin , Hui-Ling Chang , Ching-Hsiang Tsai , Chao-Chiun Liang , Gen-Wen Hsieh , Yuh-Wen Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , B81B2201/12 , B81C1/00626 , B81C2201/0142 , G01Q60/38
摘要： A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.
摘要翻译：提供了一种用于控制结构尺寸的液体重力驱动蚀刻停止技术，其中与蚀刻停止溶液配合的相反蚀刻沟槽用于控制晶片级上的微结构的尺寸。在一个实施例中，围绕微结构的相对的沟槽分别蚀刻在晶片的侧面上，并且在其上的晶片侧面上的沟槽深度等于微结构的设计尺寸。相反，不需要在芯片的背面限定沟槽深度。在制造过程的最后步骤中，当器件被蚀刻时，使得侧面上的沟槽彼此连通以自动地将微结构与全部晶片分离，从而从蚀刻剂移动到蚀刻停止溶液中以停止蚀刻。

3. 发明授权

US07682855B2 Fabrication method of substrate-free light emitting diode 失效
标题翻译：无基板发光二极管的制造方法
公开(公告)号：US07682855B2
公开(公告)日：2010-03-23
申请号：US11461436
申请日：2006-07-31
申请人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
发明人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
摘要翻译：提供了包括外延层，导电支撑层和第一接触焊盘的无基板的发光二极管（LED）。外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。发光层设置在第一掺杂半导体层上，第一掺杂半导体层的一部分露出。第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧，以避免电极的遮光效应，以提高LED的前发光效率。

4. 发明申请

US20070158639A1 SUBSTRATE-FREE LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF 失效
标题翻译：无基板发光二极管及其制造方法
公开(公告)号：US20070158639A1
公开(公告)日：2007-07-12
申请号：US11461436
申请日：2006-07-31
申请人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
发明人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
IPC分类号： H01L33/00 , H01L21/461
CPC分类号： H01L33/0079
摘要： A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
摘要翻译：提供了包括外延层，导电支撑层和第一接触焊盘的无基板的发光二极管（LED）。外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。发光层设置在第一掺杂半导体层上，第一掺杂半导体层的一部分露出。第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧，以避免电极的遮光效应，以提高LED的前发光效率。

5. 发明授权

US07973330B2 Substrate-free light emitting diode 有权
标题翻译：无基板发光二极管
公开(公告)号：US07973330B2
公开(公告)日：2011-07-05
申请号：US12510255
申请日：2009-07-27
申请人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
发明人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
摘要翻译：提供了包括外延层，导电支撑层和第一接触焊盘的无基板的发光二极管（LED）。外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。发光层设置在第一掺杂半导体层上，第一掺杂半导体层的一部分露出。第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧，以避免电极的遮光效应，以提高LED的前发光效率。

6. 发明申请

US20090283750A1 SUBSTRATE-FREE LIGHT EMITTING DIODE 有权
标题翻译：无基板发光二极管
公开(公告)号：US20090283750A1
公开(公告)日：2009-11-19
申请号：US12510255
申请日：2009-07-27
申请人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
发明人： Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
摘要翻译：提供了包括外延层，导电支撑层和第一接触焊盘的无基板的发光二极管（LED）。外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。发光层设置在第一掺杂半导体层上，第一掺杂半导体层的一部分露出。第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧，以避免电极的遮光效应，以提高LED的前发光效率。

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