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    • 1. 发明授权
    • Etching solution
    • 蚀刻溶液
    • US5462640A
    • 1995-10-31
    • US962801
    • 1992-12-22
    • Walter StarkRobert Ruprecht
    • Walter StarkRobert Ruprecht
    • C23F1/10C23F1/20C23F1/26C23F1/28C23F1/36C23F1/44C09K13/00C23F1/00
    • C23F1/10C23F1/20C23F1/26C23F1/28C23F1/36C23F1/44
    • An etching solution for etching away a metal layer from a substrate includes a hydrogen-containing compound that dissolves the metal layer while developing hydrogen; and a nitrosubstituted organic compound having a nitro group which is easily hydratable and which has at least a 1/3 nitro group equivalent per mole of the hydrogen developed by reaction between the hydrogen-containing compound and the metal layer until the metal layer is dissolved completely. A method for etching employs the etching solution into which the substrate is immersed. The process of preventing the release of hydrogen gas during the etching away of a metal layer from a substrate is taught and includes employing an etching solution containing one of an acid or a highly basic metal hydroxide; and adding to the etching solution an organic nitro compound which is soluble in water and which is easily hydratable.
    • PCT No.PCT / DE92 / 00321 Sec。 371日期1992年12月22日 102(e)日期1992年12月22日PCT提交1992年4月21日PCT公布。 WO92 / 19792 PCT出版物 1992年11月12日,蚀刻从衬底上去除金属层的蚀刻溶液包括在显影氢的同时溶解金属层的含氢化合物; 和具有硝基的亚硝基取代的有机化合物,其易于水合,并且每摩尔由含氢化合物和金属层之间的反应产生的氢显示出至少1/3的硝基当量直到金属层完全溶解 。 蚀刻方法采用浸渍基板的蚀刻液。 教导了在将金属层从衬底蚀刻掉期间防止氢气释放的过程,并且包括使用含有酸或高碱性金属氢氧化物中的一种的蚀刻溶液; 并向蚀刻溶液中加入可溶于水并易于水合的有机硝基化合物。