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    • 4. 发明授权
    • Apparatus for measuring light beam characteristics
    • 用于测量光束特性的装置
    • US4693599A
    • 1987-09-15
    • US837644
    • 1986-03-05
    • Walter MargulisWilson SibbettWilliam E. Sleat
    • Walter MargulisWilson SibbettWilliam E. Sleat
    • G01T1/24G01J1/00H01L31/02H01L31/08G01J1/42H01L27/14
    • H01L31/08
    • The spatial or temporal characteristic of a beam of light or other electromagnetic radiation or a beam of sub-atomic particles is measured by an array of detectors. The array comprises the layer 1 of photosensitive material on which there are positioned pairs of electrodes 1a, 2a and 1b, 2b etc., with gaps between the electrodes of a pair. The gaps are spaced apart linearly and the material is chosen so that incident light affects current flow between the electrodes defining a gap. Changes in current flow between the individual pairs of electrodes are measured. For measurement of spatial profile layer 1 has a resistivity which varies linearly with the amplitude of incident light. For measurement of temporal profile the beam is split with the split beams being directed on to the array with different angles of incidence and the material is chosen to have a two-photon conductivity.
    • 通过一组检测器测量光束或其他电磁辐射或亚原子粒子束的空间或时间特性。 该阵列包括感光材料层1,其上设置有一对电极1a,2a和1b,2b等之间的间隔。 这些间隙线性地间隔开,并且选择材料使得入射光影响限定间隙的电极之间的电流。 测量各对电极之间电流的变化。 对于空间分布层1的测量具有随入射光的振幅线性变化的电阻率。 为了测量时间曲线,将光束分裂,分束束以不同的入射角被引导到阵列,并且选择材料具有双光子导电性。
    • 9. 发明授权
    • Impedance-matching coupler
    • 阻抗匹配耦合器
    • US07348865B2
    • 2008-03-25
    • US10548267
    • 2003-03-07
    • Maria CarvalhoLuiz ConradoLuciene DemenicisWalter MargulisDaniele Seixas
    • Maria CarvalhoLuiz ConradoLuciene DemenicisWalter MargulisDaniele Seixas
    • H03H7/38
    • H01P5/02
    • An impedance-matching coupler (1) comprises a dielectric substrate (10) onto which a conducting strip (12) is disposed. A dielectric layer (14), preferably a dielectric film, is formed on top of the conducting strip and the first dielectric layer to encircle the conducting strip. A metallic layer (16, 18) is finally provided on top of the dielectric layer. The dielectric layer has a dielectric constant that is substantially higher that the dielectric constant for the dielectric substrate, preferably more than ten times higher. A dielectric film with a thickness of less than 100 μm is advantageous, preferably between 5 and 100 μm, and even more preferably between 10 and 70 μm. The thickness of the dielectric substrate is preferably larger than for the dielectric film, preferably more than ten time larger. The conducting strip has preferably a constant width. The dielectric film thickness is preferably larger than 10% of the conducting strip width.
    • 阻抗匹配耦合器(1)包括电介质基板(10),导电条(12)设置在电介质基板上。 介电层(14),最好是电介质膜,形成在导电条和第一介电层的顶部,以环绕导电条。 金属层(16,18)最终设置在电介质层的顶部。 电介质层的介电常数比电介质基片的介电常数高得多,优选高10倍以上。 厚度小于100μm的电介质膜是有利的,优选在5至100μm之间,甚至更优选在10至70μm之间。 电介质基板的厚度优选大于电介质膜的厚度,优选大于十倍以上。 导电带优选具有恒定的宽度。 电介质膜厚度优选大于导电带宽度的10%。
    • 10. 发明申请
    • Impedance-matching coupler
    • 阻抗匹配耦合器
    • US20060226930A1
    • 2006-10-12
    • US10548267
    • 2003-03-07
    • Maria CarvalhoLuiz ConradoLuciene DememocosWalter MargulisDaniele Seixas
    • Maria CarvalhoLuiz ConradoLuciene DememocosWalter MargulisDaniele Seixas
    • H01P5/02
    • H01P5/02
    • An impedance-matching coupler (1) comprises a dielectric substrate (10) onto which a conducting strip (12) is disposed. A dielectric layer (14), preferably a dielectric film, is formed on top of the conducting strip and the first dielectric layer to encircle the conducting strip. A metallic layer (16, 18) is finally provided on top of the dielectric layer. The dielectric layer has a dielectric constant that is substantially higher that the dielectric constant for the dielectric substrate, preferably more than ten times higher. A dielectric film with a thickness of less than 100 μm is advantageous, preferably between 5 and 100 μm, and even more preferably between 10 and 70 μm. The thickness of the dielectric substrate is preferably larger than for the dielectric film, preferably more than ten time larger. The conducting strip has preferably a constant width. The dielectric film thickness is preferably larger than 10% of the conducting strip width.
    • 阻抗匹配耦合器(1)包括电介质基板(10),导电条(12)设置在电介质基板上。 介电层(14),最好是电介质膜,形成在导电条和第一介电层的顶部,以环绕导电条。 金属层(16,18)最终设置在电介质层的顶部。 电介质层的介电常数比电介质基片的介电常数高得多,优选高10倍以上。 厚度小于100μm的电介质膜是有利的,优选在5至100μm之间,甚至更优选在10至70μm之间。 电介质基板的厚度优选大于电介质膜的厚度,优选大于十倍以上。 导电带优选具有恒定的宽度。 电介质膜厚度优选大于导电带宽度的10%。