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    • 2. 发明申请
    • Delta-sigma analog-to-digital converter suitable for use in a radio receiver channel
    • 适用于无线电接收机通道的Delta-sigma模数转换器
    • US20070080843A1
    • 2007-04-12
    • US11249236
    • 2005-10-12
    • Wai LeeXudong ZhaoAmit KumarJianping WenGarry Link
    • Wai LeeXudong ZhaoAmit KumarJianping WenGarry Link
    • H03M1/12
    • H03M3/452H03H11/04H03H17/0664H03H2218/04H03H2218/10H03M3/424H03M3/448H03M3/454H03M3/462
    • A radio receiver channel includes an analog front end and a digital signal processing section coupled together by an analog-to-digital converter (ADC) having a delta-sigma modulator coupled to a first digital decimation filter, which is coupled to second digital decimation filter, wherein the first decimation filter includes a source of finite impulse response coefficients coupled so as to provide a plurality of coefficients. The delta-sigma modulator includes a loop filter having a plurality of serially coupled integrators, and a multi-bit quantizer coupled to the loop filter; the multi-bit quantizer including an ADC operable to produce a multi-bit digital output signal, the ADC coupled to a DAC having dual DAC feedback loops, and a dynamic element matching function. In one embodiment, the delta-sigma modulator includes a fifth-order loop filter having five serially coupled integrators with a feedback path from the output to the input of the fifth integrator and a feedback path from the output to the input of the third integrator.
    • 无线电接收机通道包括模拟前端和数字信号处理部分,该数字信号处理部分由具有耦合到第一数字抽取滤波器的Δ-Σ调制器的模数转换器(ADC)耦合在一起,该Δ-Σ调制器耦合到第二数字抽取滤波器 ,其中所述第一抽取滤波器包括耦合以便提供多个系数的有限脉冲响应系数的源。 Δ-Σ调制器包括具有多个串联耦合的积分器的环路滤波器和耦合到环路滤波器的多位量化器; 多位量化器包括可操作以产生多位数字输出信号的ADC,耦合到具有双DAC反馈回路的DAC的ADC和动态元件匹配功能。 在一个实施例中,Δ-Σ调制器包括具有五个串联耦合积分器的五阶环路滤波器,其具有从第五积分器的输出到输入的反馈路径以及从第三积分器的输出到输入的反馈路径。
    • 6. 发明授权
    • Method of etching shaped features on a substrate
    • 在基板上蚀刻成形特征的方法
    • US06784110B2
    • 2004-08-31
    • US10263019
    • 2002-10-01
    • Jianping WenMeihua ShenHung-Kwei Hu
    • Jianping WenMeihua ShenHung-Kwei Hu
    • H01L21302
    • H01L21/32137
    • In a method of etching a substrate, a substrate is provided in a process zone, the substrate having a pattern of features comprising dielectric covering semiconductor. In a first stage, an energized first etching gas is provided in the process zone, the energized first etching gas having a first selectivity of etching dielectric to semiconductor of at least about 1.8:1, wherein the dielectric is etched preferentially to the semiconductor to etch through the dielectric to at least partially expose the semiconductor. In a second stage, an energized second etching gas is provided in the process zone, the energized second etching gas having a second selectivity of etching dielectric to semiconductor of less than about 1:1.8, wherein the semiconductor is etched preferentially to the dielectric.
    • 在蚀刻衬底的方法中,在工艺区域中设置衬底,衬底具有包括电介质覆盖半导体的特征图案。 在第一阶段中,在处理区域中提供通电的第一蚀刻气体,所激发的第一蚀刻气体具有至少约1.8:1的对半导体的蚀刻电介质的第一选择性,其中电介质优先蚀刻到半导体以蚀刻 通过电介质至少部分地暴露半导体。 在第二阶段中,在处理区域中提供通电的第二蚀刻气体,所通电的第二蚀刻气体具有小于约1:1.8的蚀刻电介质至半导体的第二选择性,其中半导体优先蚀刻到电介质。