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1. 发明授权

US11875998B2 Substrate processing method 有权
公开(公告)号：US11875998B2
公开(公告)日：2024-01-16
申请号：US17118270
申请日：2020-12-10
申请人： WONIK IPS CO., LTD.
发明人： Kwang Seon Jin , Jin Sung Chun , Sang Jun Park , Byung Chul Cho , Jun Hyuck Kwon
IPC分类号： H01L21/306 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/3244 , H01J37/32357 , H01J37/32715 , H01J2237/334
摘要： A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

2. 发明授权

US10752993B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US10752993B2
公开(公告)日：2020-08-25
申请号：US15785686
申请日：2017-10-17
申请人： WONIK IPS CO., LTD.
发明人： Wook Sang Jang , Sang Jun Park , Ho Young Lee
IPC分类号： H01L21/687 , C23C16/458 , H01L21/677 , H01L21/02
摘要： Provided is a substrate processing apparatus and substrate processing method for depositing a thin film on a substrate. The substrate processing apparatus may include a chamber, a susceptor rotatably mounted in the chamber, at least one satellite mounted on the susceptor, configured to place a substrate thereon, and capable of being floated and rotating due to pressure of a gas supplied through the susceptor, to rotate the substrate, and of revolving due to rotation of the susceptor, and a cart lifting module including a cart mounted on the susceptor around the satellite and supporting an edge of the substrate to take over the substrate and place the substrate on the satellite, and a cart lifting device capable of lifting and lowering the cart.

3. 发明授权

US10699900B2 Method for forming thin film 有权
公开(公告)号：US10699900B2
公开(公告)日：2020-06-30
申请号：US16409542
申请日：2019-05-10
申请人： WONIK IPS CO., LTD.
发明人： Sang Jun Park , Tae Ho Jeon , Sang Jin Lee , Chang Hee Han , Tae Ho Kim
IPC分类号： H01L21/02 , H01L21/311 , C23C16/455 , C23C16/52
摘要： Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

4. 发明授权

US11450531B2 Atomic layer etching method 有权
公开(公告)号：US11450531B2
公开(公告)日：2022-09-20
申请号：US17125345
申请日：2020-12-17
申请人： WONIK IPS CO., LTD.
发明人： Jun Hyuck Kwon , Jin Sung Chun , Sang Jun Park , Byung Chul Cho , Kwang Seon Jin
IPC分类号： H01J37/32 , H01L21/3065
摘要： The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.
The present invention provides an atomic layer etching method by using an atomic layer etching apparatus including a process chamber having a sealed process space, a gas injection unit installed at an upper side in the process chamber to inject a gas into the process space, a substrate support installed at a lower side in the process chamber and on which a substrate is seated, and a remote plasma generation device, the atomic layer etching method including: a substrate preparing process (S10) of preparing a substrate (100) on the substrate support; a modification process (S20) of modifying a surface layer (110) of the substrate (100) by radicalizing a modification gas containing a halogen gas except hydrogen fluoride (HF) through the remote plasma generation device coupled to the process chamber and supplying the radicalized modification gas onto the substrate (100) after the substrate preparing process (S10); a first purge process (S30) of purging the surface layer; a surface layer removal process (S40) of removing the surface layer (110) modified in the modification process (S20) by supplying a metal-containing precursor to the surface layer (110); and a second purge process (S50) of purging a surface of the substrate (100).

5. 发明授权

US11784029B2 Method and apparatus for atomic layer etching 有权
公开(公告)号：US11784029B2
公开(公告)日：2023-10-10
申请号：US17367100
申请日：2021-07-02
申请人： WONIK IPS CO., LTD.
发明人： Kwang Seon Jin , Sang Jun Park , Byung Chul Cho , Jun Hyuck Kwon , Jong Ki An , Tian Hao Han
IPC分类号： H01J37/32 , H01L21/311 , H01L21/3213
CPC分类号： H01J37/32522 , H01J37/3244 , H01L21/31122 , H01L21/32136 , H01J2237/2001 , H01J2237/334
摘要： A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.

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