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2. 发明申请

US20220127725A1 METHOD OF PROCESSING SUBSTRATE 有权
公开(公告)号：US20220127725A1
公开(公告)日：2022-04-28
申请号：US17408114
申请日：2021-08-20
申请人： WONIK IPS CO., LTD.
发明人： Dae Seong LEE , Hyeon Beom GWON , Kyung PARK
IPC分类号： C23C16/455 , H01L21/28 , C23C16/56
摘要： The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate. An embodiment of a substrate processing method according to the present disclosure comprises the steps of: carrying a substrate into a first chamber; a first pressurizing step increasing the pressure in the first chamber so that the pressure in the first chamber reaches a first high-pressure that is higher than the normal pressure; a first depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a second high-pressure that is lower than the first high-pressure and equal to or higher than the normal pressure; a first pressurizing/depressurizing repeating step performing the first pressurizing step and the first depressurizing step repeatedly at a predetermined number of times; and a second depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a first low-pressure that is lower than the normal pressure.

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