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1. 发明申请

US20140061695A1 LIGHT-EMITTING DIODE WITH A MIRROR PROTECTION LAYER 有权
标题翻译：具有镜子保护层的发光二极管
公开(公告)号：US20140061695A1
公开(公告)日：2014-03-06
申请号：US13601161
申请日：2012-08-31
申请人： WEI-YU YEN , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： WEI-YU YEN , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.
摘要翻译：具有镜面保护层的发光二极管（LED）包括依次层叠N型电极，N型半导体层，发光层，P型半导体层，金属镜面层，保护层，缓冲层，结合层，永久性基板和P型电极。保护层由金属氧化物制成，并且具有用于覆盖或支撑金属镜面层的边缘的中空框架。因此，可以通过保护层保护金属镜层，防止后续工序中的氧化，防止高电流操作时的金属劣化。因此，金属镜层可以保持高反射率，从而提高LED的光提取效率和电稳定性。

2. 发明授权

US08766303B2 Light-emitting diode with a mirror protection layer 有权
标题翻译：具有镜面保护层的发光二极管
公开(公告)号：US08766303B2
公开(公告)日：2014-07-01
申请号：US13601161
申请日：2012-08-31
申请人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
摘要翻译：具有镜面保护层的发光二极管（LED）包括依次层叠N型电极，N型半导体层，发光层，P型半导体层，金属镜面层，保护层，缓冲层，结合层，永久基板和P型电极。保护层由金属氧化物制成，并且具有用于覆盖或支撑金属镜面层的边缘的中空框架。

3. 发明申请

US20130307012A1 TENSION RELEASE LAYER STRUCTURE OF LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管张力释放层结构
公开(公告)号：US20130307012A1
公开(公告)日：2013-11-21
申请号：US13472141
申请日：2012-05-15
申请人： Li-Ping Chou , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Li-Ping Chou , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/62
CPC分类号： H01L33/12 , H01L33/22 , H01L33/405
摘要： A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.
摘要翻译：张力释放层结构被应用于包括P型电极，永久性基板，结合层，张力释放层，镜面层，P型半导体层，发光层，N 型半导体层和N型电极。张力释放层由包括具有彼此混合的边界的至少两种材料元素的复合材料制成。由于张力释放层中的复合材料没有明显的界面分离，可以消除界面效应和材料之间的应力，从而提高LED的发光效率和产量。

4. 发明授权

US08546831B1 Reflection convex mirror structure of a vertical light-emitting diode 有权
标题翻译：垂直发光二极管的反射凸面镜结构
公开(公告)号：US08546831B1
公开(公告)日：2013-10-01
申请号：US13474350
申请日：2012-05-17
申请人： Fu-Bang Chen , Wei-Yu Yen , Li-Ping Chou , Wei-Chun Tseng , Chih-Sung Chang
发明人： Fu-Bang Chen , Wei-Yu Yen , Li-Ping Chou , Wei-Chun Tseng , Chih-Sung Chang
IPC分类号： H01L33/58
CPC分类号： H01L33/10 , H01L33/20
摘要： A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
摘要翻译：反射凸面镜结构被应用于垂直发光二极管（LED），其包括P型电极，永久性基板，结合层，缓冲层，镜面层，P型半导体层，光依次层叠的N型半导体层和N型电极。在P型半导体层和镜层之间，在N型电极的正下方配置有填料和反射镜。填料由透明材料制成，并具有面向发光层的凸面。镜子形成在填料的凸面上。通过利用填充物和反射镜形成反射凸面镜结构，激发光朝向两侧反射，使得激发光可以避开N型电极而不被屏蔽以提高光提取效率。

5. 发明申请

US20130313605A1 ELECTRODE CONTACT STRUCTURE OF LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管的电极接触结构
公开(公告)号：US20130313605A1
公开(公告)日：2013-11-28
申请号：US13478318
申请日：2012-05-23
申请人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/40 , H01L33/22
CPC分类号： H01L33/22 , H01L33/38 , H01L33/40
摘要： A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
摘要翻译：提供了一种用于LED的发光二极管（LED）电极接触结构。 LED包括多个N型电极，N型半导体层，发光层，P型半导体层，镜面层，缓冲层，结合层，永久性基板和P- 型电极。 N型半导体层具有不规则表面和多个接触平台。接触平台以图案化布置形成并分布在N型半导体层上，并且不规则表面形成在N型半导体层上的没有接触平台的区域。 N型电极分别形成在接触平台上。通过由接触平台提供的平坦界面，当在接触平台上形成N型电极时，不会产生空隙。因此，确保令人满意的电接触，从而提高发光效率。

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