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    • 6. 发明申请
    • GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF
    • 颗粒状多晶硅及其生产
    • US20130295385A1
    • 2013-11-07
    • US13888518
    • 2013-05-07
    • Wacker Chemie AG
    • Harald HERTLEINRainer HAUSWIRTHDieter WEIDHAUS
    • C01B33/02C23C16/24C23C16/442
    • C01B33/02C01B33/03C01P2002/90C01P2004/03C01P2004/45C01P2004/50C01P2006/12C01P2006/80C23C16/24C23C16/442Y10T428/2982
    • Granular polycrystalline silicon includes a compact matrix including radiating acicular crystal aggregates of crystal size from 0.001-200 μm. A process for producing granular polycrystalline silicon includes producing granular silicon in a fluidized bed reactor from a gas mixture containing TCS (20-29 mol %) and hydrogen at a fluidized bed temperature of 900-970° C., dividing the granular silicon in a screen system having at least one screen deck into at least two screen fractions, the smallest screen fraction being ground in a grinding system to give seed particles having a size of 100-1500 μm and a mass-based median value from 400 to 900 μm, and these seed particles being supplied to fluidized bed reactor, and a further screen fraction being supplied to a fluidized bed reactor, and being surface-treated with a gas mixture containing TCS (5.1-10 mol %) and hydrogen at a fluidized bed temperature of 870-990° C.
    • 颗粒状多晶硅包括紧凑的基体,包括散射出0.001-200μm的晶体尺寸的针状结晶聚集体。 一种生产颗粒状多晶硅的方法包括在流化床反应器中由流化床温度为900-970℃的TCS(20-29mol%)和氢气的气体混合物制备颗粒状硅,将粒状硅分成 筛网系统具有至少一个筛板,至少两个筛分部分,最小筛分部分在研磨系统中研磨以得到尺寸为100-1500μm的种子颗粒和基于质量的中值为400至900μm, 并将这些种子颗粒供应到流化床反应器,并将另外的筛分部分供入流化床反应器,并在流化床温度为TCS(5.1-10mol%)和氢气的气体混合物进行表面处理 870-990℃