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1. 发明授权

US06887437B1 Reactor configuration and method for producing it 有权
标题翻译：反应器配置及其生产方法
公开(公告)号：US06887437B1
公开(公告)日：2005-05-03
申请号：US09718902
申请日：2000-11-22
申请人： Volker Lehmann , Stefan Ottow , Reinhard Stengl , Hans Reisinger , Hermann Wendt
发明人： Volker Lehmann , Stefan Ottow , Reinhard Stengl , Hans Reisinger , Hermann Wendt
IPC分类号： B01D50/00 , B01D53/34 , B01J19/00 , C23C16/02 , C23C16/26
CPC分类号： C23C16/26 , B01J19/0093 , B01J2219/00788 , B01J2219/00822 , B01J2219/00824 , B01J2219/00828 , B01J2219/00835 , B01J2219/00844 , B01J2219/00862 , C23C16/0245
摘要： A reactor configuration contains a housing connected to a silicon wafer. The silicon wafer has pores extending from a first main area of the silicon wafer into an interior of the silicon wafer, preferably as far as a second main area of the silicon wafer. A catalyst layer at least partly covers the surface of the pores.
摘要翻译：反应器构造包含连接到硅晶片的壳体。硅晶片具有从硅晶片的第一主区域延伸到硅晶片的内部的孔，优选地直到硅晶片的第二主区域。催化剂层至少部分地覆盖孔的表面。

2. 发明授权

US06558770B1 Perforated work piece, and method for producing it 有权
标题翻译：穿孔工件及其制造方法
公开(公告)号：US06558770B1
公开(公告)日：2003-05-06
申请号：US09708277
申请日：2000-11-08
申请人： Volker Lehmann , Hans Reisinger , Hermann Wendt , Reinhard Stengel , Gerrit Lange , Stefan Ottow
发明人： Volker Lehmann , Hans Reisinger , Hermann Wendt , Reinhard Stengel , Gerrit Lange , Stefan Ottow
IPC分类号： B32B324
CPC分类号： C25F3/02 , H01P1/20 , Y10T428/24273 , Y10T428/24331
摘要： A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.
摘要翻译：由硅制成的衬底具有第一区域和第二区域。在第一区域形成通孔。在第二区域中设置不穿过基板的孔。借助于孔的电化学蚀刻来进行工件的制造。衬底的整个表面被掩模层覆盖，该掩模层被光刻地构造在衬底的后面。第二区域中的孔的底部被清洗，优选使用KOH。

3. 发明授权

US07259024B2 Method of treating a substrate in manufacturing a magnetoresistive memory cell 有权
公开(公告)号：US07259024B2
公开(公告)日：2007-08-21
申请号：US11175386
申请日：2005-07-07
申请人： Stefan Ottow , Kim Woosik , Rainer Leuschner
发明人： Stefan Ottow , Kim Woosik , Rainer Leuschner
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , Y10S438/906
摘要： A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection layer in a cleaning operation on the substrate.

4. 发明授权

US06749716B2 Apparatus for assessing a silicon dioxide content 失效
标题翻译：用于评估二氧化硅含量的装置
公开(公告)号：US06749716B2
公开(公告)日：2004-06-15
申请号：US10273521
申请日：2002-10-18
申请人： Stefan Ottow , Ulf Steuer
发明人： Stefan Ottow , Ulf Steuer
IPC分类号： H01L21306
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/67242
摘要： An apparatus for assessing a silicon dioxide content of a phosphoric acid bath for etching silicon nitride and a system for etching silicon nitride bath utilize a sensor. In particular, the apparatus for assessing the silicon dioxide content of a phosphoric acid bath for etching silicon nitride of the present invention contains a sensor for measuring the NH3 concentration of the phosphoric acid bath, a storage unit for storing data which define a relationship between the silicon dioxide content and the NH3 concentration, and a device for calculating the silicon dioxide content of the basis of the measured NH3 concentration and the stored data.
摘要翻译：用于评估用于蚀刻氮化硅的磷酸浴的二氧化硅含量的设备和用于蚀刻氮化硅浴的系统利用传感器。特别地，本发明的用于蚀刻氮化硅的磷酸浴的二氧化硅含量的评价装置含有测定磷酸浴的NH 3浓度的传感器，存储数据的存储部，二氧化硅含量和NH 3浓度，以及用于计算测量的NH 3浓度和存储数据的二氧化硅含量的装置。

5. 发明授权

US06663674B2 Method of handling a silicon wafer 有权
公开(公告)号：US06663674B2
公开(公告)日：2003-12-16
申请号：US10126372
申请日：2002-04-19
申请人： Michael Thomas Tucker , Terry Breeden , Stefan Ottow , Wolfram Köstler , Dan Wissel
发明人： Michael Thomas Tucker , Terry Breeden , Stefan Ottow , Wolfram Köstler , Dan Wissel
IPC分类号： H01L21302
CPC分类号： H01L21/31111 , H01L21/02032 , H01L21/3185
摘要： A recycling procedure for 300 mm nitride dummy wafers which have a stabilization layer of silicon dioxide is provided. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160° C. In particular, a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process includes the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.

6. 发明申请

US20070010031A1 Method of treating a substrate in manufacturing a magnetoresistive memory cell 有权
标题翻译：在制造磁阻存储单元时处理衬底的方法
公开(公告)号：US20070010031A1
公开(公告)日：2007-01-11
申请号：US11175386
申请日：2005-07-07
申请人： Stefan Ottow , Kim Woosik , Rainer Leuschner
发明人： Stefan Ottow , Kim Woosik , Rainer Leuschner
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , Y10S438/906
摘要： A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection layer in a cleaning operation on the substrate.
摘要翻译：在制造磁阻存储单元中处理衬底的方法包括使用掩模层作为用于蚀刻周边通孔的保护层来对衬底进行清洁操作。此外，在衬底上的清洁操作中，可以使用蚀刻停止层作为保护层。

7. 发明授权

US06996479B2 Method and apparatus for measuring and controlling the water content of a water-containing liquid mixture 失效
公开(公告)号：US06996479B2
公开(公告)日：2006-02-07
申请号：US10403878
申请日：2003-03-31
申请人： Stefan Ottow , Martin Welzel , Dan Wissel
发明人： Stefan Ottow , Martin Welzel , Dan Wissel
IPC分类号： G06F19/00
CPC分类号： G01N25/56 , G01N25/142 , H01L21/31111
摘要： An apparatus for measuring the water content of a water-containing liquid mixture contained in a tight chemistry tank includes a heating device for controlling the temperature of the liquid mixture to a temperature near the boiling point of the liquid mixture, a cooling medium system disposed at the top of the tight chemistry tank having a cooling medium inlet and a cooling medium outlet, a temperature measurement system for determining the temperature difference between the cooling medium inlet and outlet, and a computing device for calculating the water content of the liquid mixture from the temperature difference. Also provided is a tank for supplying water to the liquid mixture, and a control system for adjusting the amount of water supplied from the tank based upon the water content measured by the measuring apparatus. Also provided is a method for measure the water content.

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