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1. 发明申请

US20090206348A1 Composite Substrate, and Method for the Production of a Composite Substrate 有权
标题翻译：复合基板和复合基板的制造方法
公开(公告)号：US20090206348A1
公开(公告)日：2009-08-20
申请号：US12298723
申请日：2007-04-20
申请人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
发明人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
IPC分类号： H01L33/00 , B32B9/00 , H01L31/00 , B32B38/10 , C23F1/00 , H01L21/20
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译：一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。在实用层（31）和基板主体（2）之间布置有平坦化层（4）。复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。该实用基板（3）固定在复合基板（1）的基板主体（2）上。随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。

2. 发明授权

US08502264B2 Composite substrate, and method for the production of a composite substrate 有权
标题翻译：复合基板，以及复合基板的制造方法
公开(公告)号：US08502264B2
公开(公告)日：2013-08-06
申请号：US12298723
申请日：2007-04-20
申请人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
发明人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
IPC分类号： H01L33/02
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译：一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。在实用层（31）和基板主体（2）之间布置有平坦化层（4）。复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。该实用基板（3）固定在复合基板（1）的基板主体（2）上。随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。

3. 发明授权

US08012256B2 Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer 有权
标题翻译：使用这种准基板晶片制造准基板晶片和半导体主体的方法
公开(公告)号：US08012256B2
公开(公告)日：2011-09-06
申请号：US11668718
申请日：2007-01-30
申请人： Georg Brüderl , Christoph Eichler , Uwe Strauss
发明人： Georg Brüderl , Christoph Eichler , Uwe Strauss
IPC分类号： C30B29/06
CPC分类号： H01L21/76254
摘要： Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of fabricating a quasi-substrate wafer, a growth substrate water is fabricated that is provided with a separation zone and comprises the desired material of the growth layer. The growth substrate wafer is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main race of the growth substrate water and/or the separation zone, to a plurality of subregions along the first main face. The growth substrate wafer with separation zone exhibits no or only slight bowing.
摘要翻译：公开了一种制造具有子载波晶片和生长层的准衬底晶片的方法，以及使用这种准衬底晶片制造的半导体本体。在制造准衬底晶片的方法中，制造生长衬底晶片，其生长具有分离区并且包含生长层的所需材料。生长衬底晶片具有抵消由形成分离区产生的应力的应力和/或分离区形成所产生的应力，通过构建生长衬底晶片的第一主面和 /或分离区，沿着第一主面向多个子区域。具有分离区的生长衬底晶片没有显示或仅显示轻微的弯曲。

4. 发明授权

US07375377B2 Ingan-based light-emitting diode chip and a method for the production thereof 有权
标题翻译：基于Ingan的发光二极管芯片及其制造方法
公开(公告)号：US07375377B2
公开(公告)日：2008-05-20
申请号：US10332244
申请日：2001-06-13
申请人： Johannes Baur , Georg Brüderl , Berthold Hahn , Volker Härle , Uwe Strauss
发明人： Johannes Baur , Georg Brüderl , Berthold Hahn , Volker Härle , Uwe Strauss
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/24 , H01L33/08 , H01L33/20 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed.
摘要翻译：设置有基板（2）上的基于InGaN的具有辐射发射活性结构（4）的一系列外延层（3）的发光二极管芯片（1）。在衬底（2）和活性结构（4）之间，提供缓冲层（20）。选择缓冲层（20）的材料或材料使得其活性结构（4）的外延的外延表面（6）在其外延温度下不受应力或略微受应力。活性结构（4）具有富铟区（5），其相对于外延平面横向并排布置，其中In含量高于活性结构（4）的其它区域。公开了一种制造芯片的优选方法。

5. 发明授权

US07524737B2 Method of fabricating a semiconductor chip with a nitride compound semiconductor material 有权
标题翻译：用氮化物半导体材料制造半导体芯片的方法
公开(公告)号：US07524737B2
公开(公告)日：2009-04-28
申请号：US11314447
申请日：2005-12-20
申请人： Georg Brüderl , Volker Härle
发明人： Georg Brüderl , Volker Härle
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01L33/405
摘要： In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).
摘要翻译：在制造半导体芯片的工艺中，在生长衬底（1）上外延生长功能性半导体层序列（2）。然后，通过离子注入在生长衬底（1）中形成平行于生长衬底（1）的主表面（8）平行的分离区（4），通过功能半导体层发生离子注入序列（2）。然后，从功能半导体层序列（2）施加手柄基板（6），从分离区域（4）观察到远离手柄基板（6）的生长基板（1）的一部分，沿分离区（4）分离。

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