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    • 1. 发明申请
    • PROCESS FOR DEPOSITING ELECTRODE WITH HIGH EFFECTIVE WORK FUNCTION
    • 具有高效工作功能沉积电极的工艺
    • US20120309181A1
    • 2012-12-06
    • US13359385
    • 2012-01-26
    • Vladimir MachkaoutsanJan Willem MaesQi Xie
    • Vladimir MachkaoutsanJan Willem MaesQi Xie
    • H01L21/28
    • H01L21/823842H01L21/28088H01L29/4966H01L29/66545H01L29/7833
    • According to some embodiments, an electrode have a high effective work function is formed. The electrode may be the gate electrode of a transistor and may be formed on a high-k gate dielectric by depositing a first layer of conductive material, exposing that first layer to a hydrogen-containing gas, and depositing a second layer of conductive material over the first layer. The first layer may be deposited using a non-plasma process in which the substrate is not exposed to plasma or plasma-generated radicals. The hydrogen-containing gas to which the first layer is exposed may include an excited hydrogen species, which may be part of a hydrogen-containing plasma, and may be hydrogen-containing radicals. The first layer may also be exposed to oxygen before depositing the second layer. The work function of the gate electrode in the gate stack may be about 5 eV or higher in some embodiments.
    • 根据一些实施例,形成具有高有效功函数的电极。 电极可以是晶体管的栅极,并且可以通过沉积第一层导电材料,将第一层暴露于含氢气体,并将第二层导电材料沉积在高k栅极电介质上形成 第一层。 可以使用其中衬底不暴露于等离子体或等离子体产生的自由基的非等离子体工艺来沉积第一层。 第一层露出的含氢气体可以包括可以是含氢等离子体的一部分的被激发的氢物质,并且可以是含氢基团。 在沉积第二层之前,第一层也可能暴露于氧气。 在一些实施例中,栅极堆叠中的栅电极的功函数可以为约5eV或更高。
    • 2. 发明授权
    • Process for depositing electrode with high effective work function
    • 具有高效功能的电极沉积工艺
    • US09136180B2
    • 2015-09-15
    • US13359385
    • 2012-01-26
    • Vladimir MachkaoutsanJan Willem MaesQi Xie
    • Vladimir MachkaoutsanJan Willem MaesQi Xie
    • H01L21/8238H01L21/28H01L29/49H01L29/66H01L29/78
    • H01L21/823842H01L21/28088H01L29/4966H01L29/66545H01L29/7833
    • According to some embodiments, an electrode have a high effective work function is formed. The electrode may be the gate electrode of a transistor and may be formed on a high-k gate dielectric by depositing a first layer of conductive material, exposing that first layer to a hydrogen-containing gas, and depositing a second layer of conductive material over the first layer. The first layer may be deposited using a non-plasma process in which the substrate is not exposed to plasma or plasma-generated radicals. The hydrogen-containing gas to which the first layer is exposed may include an excited hydrogen species, which may be part of a hydrogen-containing plasma, and may be hydrogen-containing radicals. The first layer may also be exposed to oxygen before depositing the second layer. The work function of the gate electrode in the gate stack may be about 5 eV or higher in some embodiments.
    • 根据一些实施例,形成具有高有效功函数的电极。 电极可以是晶体管的栅极,并且可以通过沉积第一层导电材料,将第一层暴露于含氢气体,并将第二层导电材料沉积在高k栅极电介质上形成 第一层。 可以使用其中衬底不暴露于等离子体或等离子体产生的自由基的非等离子体工艺来沉积第一层。 第一层露出的含氢气体可以包括可以是含氢等离子体的一部分的被激发的氢物质,并且可以是含氢基团。 在沉积第二层之前,第一层也可能暴露于氧气。 在一些实施例中,栅极堆叠中的栅电极的功函数可以为约5eV或更高。
    • 4. 发明授权
    • Structured-light based measuring method and system
    • 基于结构光的测量方法和系统
    • US09360307B2
    • 2016-06-07
    • US13696785
    • 2010-05-07
    • Danwei ShiDi WuWenchuang ZhaoQi Xie
    • Danwei ShiDi WuWenchuang ZhaoQi Xie
    • H04N7/18G01B11/25G06T7/00
    • G01B11/2545G06T7/521G06T2207/10012
    • A structured-light measuring method, includes: matching process, in which the number and the low-precision depth of a laser point are achieved by using the imaging position of the laser point on a first camera (21) according to a first corresponding relationship in a calibration database, and the imaging position of the laser point on a second camera (22) is searched according to the number and the low-precision depth of the laser point so as to acquire the candidate matching points, then the matching process is completed according to the imaging position of the first camera (21) and the candidate matching points of the imaging position of the first camera (21) on the second camera (22) so that a matching result is achieved; and computing process, in which the imaging position of the second camera (22) matching with the imaging position of the first camera (21) is achieved according to the matching result, and then the precision position of the laser point is determined by a second corresponding relationship in the calibration database. A structured-light measuring system utilizes the above measuring method.
    • 一种结构光测量方法,包括:匹配处理,其中通过根据第一对应关系在第一相机(21)上使用激光点的成像位置来实现激光点的数量和低精度深度 在校准数据库中,根据激光点的数量和低精度深度搜索激光点在第二相机(22)上的成像位置,以获得候选匹配点,则匹配处理为 根据第一相机(21)的成像位置和第二相机(22)上的第一相机(21)的成像位置的候选匹配点完成,从而实现匹配结果; 以及计算处理,其中根据匹配结果实现与第一相机(21)的成像位置匹配的第二相机(22)的成像位置,然后由第二相位确定激光点的精确位置 校准数据库中的对应关系。 结构光测量系统采用上述测量方法。
    • 7. 发明申请
    • Structured-Light Based Measuring Method and System
    • 基于结构光的测量方法和系统
    • US20130050476A1
    • 2013-02-28
    • US13696785
    • 2010-05-07
    • Danwei ShiDi WuWenchuang ZhaoQi Xie
    • Danwei ShiDi WuWenchuang ZhaoQi Xie
    • H04N7/18
    • G01B11/2545G06T7/521G06T2207/10012
    • A structured-light measuring method, includes: matching process, in which the number and the low-precision depth of a laser point are achieved by using the imaging position of the laser point on a first camera (21) according to a first corresponding relationship in a calibration database, and the imaging position of the laser point on a second camera (22) is searched according to the number and the low-precision depth of the laser point so as to acquire the candidate matching points, then the matching process is completed according to the imaging position of the first camera (21) and the candidate matching points of the imaging position of the first camera (21) on the second camera (22) so that a matching result is achieved; and computing process, in which the imaging position of the second camera (22) matching with the imaging position of the first camera (21) is achieved according to the matching result, and then the precision position of the laser point is determined by a second corresponding relationship in the calibration database. A structured-light measuring system utilizes the above measuring method.
    • 一种结构光测量方法,包括:匹配处理,其中通过根据第一对应关系在第一相机(21)上使用激光点的成像位置来实现激光点的数量和低精度深度 在校准数据库中,根据激光点的数量和低精度深度搜索激光点在第二相机(22)上的成像位置,以获得候选匹配点,则匹配处理为 根据第一相机(21)的成像位置和第二相机(22)上的第一相机(21)的成像位置的候选匹配点完成,从而实现匹配结果; 以及计算处理,其中根据匹配结果实现与第一相机(21)的成像位置匹配的第二相机(22)的成像位置,然后由第二相位确定激光点的精确位置 校准数据库中的对应关系。 结构光测量系统采用上述测量方法。