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    • 3. 发明授权
    • Process for marking semiconductor surfaces
    • 半导体表面标记工艺
    • US5175425A
    • 1992-12-29
    • US744669
    • 1991-08-09
    • Hans-Hermann SpratteWerner Reindl
    • Hans-Hermann SpratteWerner Reindl
    • G06K1/12G06K19/06
    • G06K1/126G06K19/06028G06K2019/06253Y10S235/901
    • The bar code (Sk) for marking semiconductor surfaces includes a plurality of parallel bar elements (Se) having identical widths (b), wherein every bar element (Se) is formed as a series of overlapping softmark melting points (SSp) produced by means of laser bombardment to a depth of less than 2 u m. Narrow bars (sSt) are preferably formed by means of one bar element (Se) and wide bars (bSt) are preferably formed by means of two bar elements (Se) which are applied at a slight distance (a) relative to one another. The process for marking semiconductor surfaces with this bar code includes producing by laser bombardment with a softmark technique a plurality of parallel bar elements (Se). Each bar element is formed by a series of overlapping softmark melting points (SSp). The melting points (SSp) of the bar elements (Se) are applied at a depth of less than 2 micrometers, and the laser bombardment is controlled with respect to time so that, when producing one of the softmark melting points (SSp), the previously produced softmark melting point is at least partially hardened again.
    • PCT No.PCT / DE88 / 00357 Sec。 371日期二○○九年二月十五日 102(e)日期1989年2月15日PCT Filted 1987年6月15日PCT公布。 出版物WO88 / 10475 日期为1988年12月29日。用于标记半导体表面的条形码(Sk)包括具有相同宽度(b)的多个平行条形元件(Se),其中每个条形元件(Se)形成为一系列重叠的软标记熔化 通过激光轰击产生的深度小于2μm的点(SSp)。 窄杆(sSt)优选地通过一个杆元件(Se)形成,并且宽杆(bSt)优选地通过相对于彼此以微小距离(a)施加的两个杆元件(Se)形成。 利用该条形码来标记半导体表面的工艺包括通过软标记技术通过激光轰击产生多个平行条形元件(Se)。 每个条形元件由一系列重叠的软标记熔点(SSp)形成。 条形元件(Se)的熔点(SSp)以小于2微米的深度施加,并且相对于时间控制激光轰击,使得当产生软标记熔点(SSp)之一时, 先前产生的软标记熔点至少部分地被硬化。