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1. 发明授权

US06208185B1 High performance active gate drive for IGBTs 有权
标题翻译： IGBT的高性能有源栅极驱动
公开(公告)号：US06208185B1
公开(公告)日：2001-03-27
申请号：US09276417
申请日：1999-03-25
申请人： Vinod John , Bum-Seok Suh , Thomas Anthony Lipo
发明人： Vinod John , Bum-Seok Suh , Thomas Anthony Lipo
IPC分类号： H03K512
CPC分类号： H03K17/168 , H03K17/0406
摘要： An active drive circuit for high power IGBTs provides optimized switching performance for both turn-on and turn-off by incorporating a three-stage action to improve performance characteristics. The gate drive circuit includes a semiconductor switch such as a MOSFET connected in series with a low resistance gate turn-on resistor between the supply line and the gate input line, and a parallel connected bipolar transistor. During the first and third stages of turn-on, the MOSFET switch is turned on to provide rapid charging of the gate, whereas during the second stage the bipolar transistor is turned on to provide a controlled level of current charging of the gate. Similarly, a switch such as an MOSFET is connected in series with a low resistance gate turn-off resistor between the turn-off supply voltage line and the gate input line, and a bipolar transistor is connected in parallel therewith across the supply line and the gate input line. During the first and second stages of turn-off, the MOSFET switch is turned on to provide rapid discharging of the gate whereas during the second stage the bipolar transistor is turned on to provide a controlled level of discharge current from the gate.
摘要翻译：大功率IGBT的有源驱动电路通过结合三级动作来提高性能特性，为开启和关断提供优化的开关性能。栅极驱动电路包括与电源线和栅极输入线之间的低电阻栅极导通电阻串联连接的MOSFET等半导体开关和并联连接的双极型晶体管。在导通的第一和第三阶段期间，MOSFET开关导通以提供栅极的快速充电，而在第二阶段期间，双极晶体管导通以提供栅极的受控电流充电水平。类似地，诸如MOSFET的开关与关断电源电压线和栅极输入线之间的低电阻栅极截止电阻串联连接，并且双极晶体管与供电线并联连接，并且门输入线。在关断的第一和第二阶段期间，MOSFET开关导通以提供栅极的快速放电，而在第二阶段期间，双极晶体管导通以提供来自栅极的受控电平的放电电流。

2. 发明授权

US6097582A Short circuit protection of IGBTs and other power switching devices 有权
标题翻译： IGBT等功率开关器件的短路保护
公开(公告)号：US6097582A
公开(公告)日：2000-08-01
申请号：US250472
申请日：1999-02-12
申请人： Vinod John , Bum-Seok Suh , Thomas Anthony Lipo
发明人： Vinod John , Bum-Seok Suh , Thomas Anthony Lipo
IPC分类号： H03K17/082 , H03K17/16 , H02H3/18
CPC分类号： H03K17/165 , H03K17/0828
摘要： A short circuit protection circuit for IGBTs and similar power switch devices. Device collector voltage, e.g., desaturation voltage, is monitored to detect rapidly the occurrence of a short circuit fault. The voltage between the power device emitter and the Kelvin emitter terminals of the device preferably is also monitored and integrated to obtain an estimate of the current flowing through the power switch device. Circuit protection is implemented if either the measured collector to emitter voltage exceeds a selected level or the estimated current through the device exceeds a selected level. Upon the detection of the fault, a capacitor in parallel with a zener diode is connected between the power switch gate and ground. Thus, following a fault, the gate voltage is driven quickly to a low level as the voltage on the gate is discharged through the capacitor. The zener diode establishes a clamp voltage at a selected level of gate voltage that permits controlled current flow through the power switching device that is within the capacity of the device so that the device is not damaged. A pre-charged capacitor is then connected between the gate and ground to turn off the power switching device gradually as the pre-charged capacitor discharges into the gate. The voltage level on the pre-charged capacitor is established by a zener diode connected in parallel thereto.
摘要翻译： IGBT和类似功率开关器件的短路保护电路。监控器件集电极电压，例如去饱和电压，以快速检测短路故障的发生。功率器件发射极和器件的开尔文发射极端子之间的电压优选地也被监测和积分，以获得流过功率开关器件的电流的估计。如果测量的集电极到发射极的电压超过选定的电平或者通过器件的估计电流超过选定的电平，则实现电路保护。在检测到故障时，与齐纳二极管并联的电容器连接在电源开关门和地之间。因此，在发生故障之后，栅极电压通过电容器放电而迅速驱动到低电平。齐纳二极管以选定的栅极电压电平建立钳位电压，允许受控的电流流过设备容量内的功率开关器件，从而不会损坏器件。然后，预充电电容器连接在栅极和地之间，以使预充电电容器放电到栅极中逐渐关闭电源开关器件。预充电电容器上的电压电平由与其并联连接的齐纳二极管建立。

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