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1. 发明授权

US4394237A Spectroscopic monitoring of gas-solid processes 失效
标题翻译：气固过程的光谱监测
公开(公告)号：US4394237A
公开(公告)日：1983-07-19
申请号：US284468
申请日：1981-07-17
申请人： Vincent M. Donnelly , Daniel L. Flamm , Robert F. Karlicek, Jr.
发明人： Vincent M. Donnelly , Daniel L. Flamm , Robert F. Karlicek, Jr.
IPC分类号： H01L21/302 , C23C16/52 , C23F4/00 , G01N21/64 , H01L21/205 , H01L21/3065 , H01L21/31 , C23C15/00
CPC分类号： G01N21/6402 , C23C16/52 , C23F4/00
摘要： A method for accurately monitoring and adjusting gas phase processes such as gas etching and chemical vapor deposition has been found. This method relies on the use of induced fluorescence. The gaseous phase used in the process to be monitored is probed by excitation with a suitable energy source. The emission from the gas phase induced through this excitation is then monitored and yields an accurate measure of concentration of the active species present. In turn the conditions of the fabrication process are adjusted based on these discerned concentrations.
摘要翻译：已经发现了用于精确地监测和调节诸如气体蚀刻和化学气相沉积的气相过程的方法。该方法依赖于诱导荧光的使用。用于监测过程中所用的气相通过用合适的能量源进行激发来探测。然后监测通过该激发诱导的气相的排放，并产生存在的活性物质的浓度的精确测量。反过来，基于这些识别的浓度调整制造过程的条件。

2. 发明授权

US4498953A Etching techniques 失效
标题翻译：蚀刻技术
公开(公告)号：US4498953A
公开(公告)日：1985-02-12
申请号：US517754
申请日：1983-07-27
申请人： Joel M. Cook , Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson , John A. Mucha
发明人： Joel M. Cook , Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson , John A. Mucha
IPC分类号： H01L21/302 , C04B41/53 , C09K13/08 , C23C16/44 , C23F1/12 , H01L21/3065 , H01L21/311 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： C04B41/5346 , C09K13/08 , C23C16/4405 , C23F1/12 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , Y10S148/105
摘要： A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
摘要翻译：通过使用多原子卤素氟化物可实现对硅，钽，硅化钽和氮化钽的高选择性 - 大于100至1蚀刻。无需使用等离子体或湿蚀刻即可实现选择性。

3. 发明授权

US4397711A Crystallographic etching of III-V semiconductor materials 失效
标题翻译： III-V半导体材料的晶体刻蚀
公开(公告)号：US4397711A
公开(公告)日：1983-08-09
申请号：US432317
申请日：1982-10-01
申请人： Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson
发明人： Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson
IPC分类号： H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/30621 , H01L21/30617 , Y10S438/978
摘要： Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
摘要翻译： III-V族半导体材料（如GaAs）中的晶体刻蚀可通过例如利用合适的含卤素的实体如氯，溴和碘来实现。该晶体蚀刻在一个实施例中产生基本垂直的光学质量表面。因此，该程序在制造集成电路和制造光学器件中是有用的。

4. 发明授权

US4377436A Plasma-assisted etch process with endpoint detection 失效
标题翻译：等离子辅助蚀刻工艺与端点检测
公开(公告)号：US4377436A
公开(公告)日：1983-03-22
申请号：US318329
申请日：1981-11-05
申请人： Vincent M. Donnelly , Daniel L. Flamm
发明人： Vincent M. Donnelly , Daniel L. Flamm
IPC分类号： G01N21/76 , H01J37/32 , H01L21/306 , C23C15/00
CPC分类号： H01J37/32935 , G01N21/76
摘要： Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.
摘要翻译：在等离子体辅助蚀刻期间的端点检测通过由蚀刻反应产物产生的空间限制的发光的停止或起始发出。通过选择性地检测与一个或少量光刻特征相关的这种荧光的光学聚焦检测器来辅助系统的灵敏度。

5. 再颁专利

USRE40264E1 Multi-temperature processing 有权
标题翻译：多温加工
公开(公告)号：USRE40264E1
公开(公告)日：2008-04-29
申请号：US10439245
申请日：2003-05-14
申请人： Daniel L. Flamm
发明人： Daniel L. Flamm
IPC分类号： H05H1/00 , H01L21/302
摘要： The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.
摘要翻译：本发明提供一种包括用于在制造器件中蚀刻衬底的方法和装置的技术。该装置包括设置在室中的室和基板保持件。衬底保持器具有选择的热质量，以便于在蚀刻工艺期间改变要蚀刻的衬底的温度。也就是说，基板保持器的所选择的热质量允许在处理膜的特征时间段内从第一温度到第二温度的变化。例如，本技术可以在蚀刻工艺等期间提供不同的加工温度。

6. 发明授权

US5711849A Process optimization in gas phase dry etching 失效
公开(公告)号：US5711849A
公开(公告)日：1998-01-27
申请号：US433623
申请日：1995-05-03
申请人： Daniel L. Flamm , John P. Verboncoeur
发明人： Daniel L. Flamm , John P. Verboncoeur
IPC分类号： C23F1/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32935
摘要： A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.

7. 发明授权

US4130490A Electric discharge for treatment of trace contaminants 失效
标题翻译：放电用于处理微量污染物
公开(公告)号：US4130490A
公开(公告)日：1978-12-19
申请号：US799832
申请日：1977-05-23
申请人： Alan M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Lovelace , Daniel L. Flamm , Theodore J. Wydeven, Jr.
发明人： Alan M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Lovelace , Daniel L. Flamm , Theodore J. Wydeven, Jr.
IPC分类号： B01J19/08 , B01K1/00
CPC分类号： B01J19/088 , Y10S422/907
摘要： A radio-frequency glow discharge reactor for removing trace oxidizable contaminants from an oxygen bearing atmosphere including a reaction chamber defined by an inner metal electrode facing a dielectric backed by an outer conductive electrode. In one embodiment, a conductive liquid forms the conductor of an outer electrode and cools the dielectric. A resonator coupled to a variable radio-frequency source generates the high voltages for creating a glow discharge in the chamber at a predetermined pressure whereby the trace contaminants are oxidized into a few simple non-toxic products that may be easily recovered. The corresponding process for removal of trace contaminants from an oxygen-bearing atmosphere with high efficiency independent of the concentration level is also disclosed.
摘要翻译：一种用于从含氧气氛中除去痕量可氧化污染物的射频辉光放电反应器，包括由内部金属电极限定的反应室，所述内部金属电极面向由外部导电电极支撑的电介质。在一个实施例中，导电液体形成外部电极的导体并冷却电介质。耦合到可变射频源的谐振器产生用于在预定压力下在腔室中产生辉光放电的高电压，由此将微量污染物氧化成易于回收的几种简单的无毒产品。还公开了与浓度水平无关地从含氧气氛中高效除去痕量污染物的相应方法。

8. 发明授权

US06858112B2 Process depending on plasma discharges sustained by inductive coupling 失效
标题翻译：取决于通过电感耦合持续的等离子体放电的过程
公开(公告)号：US06858112B2
公开(公告)日：2005-02-22
申请号：US08748746
申请日：1996-11-18
申请人： Daniel L. Flamm , Georgy K. Vinogradov , Shimao Yoneyama
发明人： Daniel L. Flamm , Georgy K. Vinogradov , Shimao Yoneyama
IPC分类号： C23C16/50 , C23C16/505 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/321 , H05H1/46
摘要： A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of currents to phase and inverse-phase capacitive coupled voltages from the inductive coupling structure can be selectively maintained.
摘要翻译：一种制造产品28,119的方法。该方法包括以下步骤：使基材经受实体组合物，至少一个实体是由由高频场激发的气体放电产生的物质产生的，其中载体可以选择性地维持来自电感耦合结构的电流到相位和反相电容耦合电压的总和。

9. 发明授权

US6017221A Process depending on plasma discharges sustained by inductive coupling 失效
公开(公告)号：US6017221A
公开(公告)日：2000-01-25
申请号：US866040
申请日：1997-05-30
申请人： Daniel L. Flamm
发明人： Daniel L. Flamm
IPC分类号： H01L21/00
CPC分类号： H01J37/321
摘要： A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.

10. 发明授权

US4310380A Plasma etching of silicon 失效
标题翻译：硅等离子体蚀刻
公开(公告)号：US4310380A
公开(公告)日：1982-01-12
申请号：US138083
申请日：1980-04-07
申请人： Daniel L. Flamm , Dan Maydan , David N. Wang
发明人： Daniel L. Flamm , Dan Maydan , David N. Wang
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/32137
摘要： By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of monocrystalline silicon (48) and doped or undoped polycrystalline silicon (54) is achieved. The etching processes, which are applicable, for example, to pattern delineation in the processing of semiconductor wafers, are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled.
摘要翻译：通过在等离子体蚀刻工艺中利用含氟气体化合物，实现单晶硅（48）和掺杂或未掺杂多晶硅（54）的各向同性蚀刻。可应用于例如在半导体晶片的处理中的图案描绘的蚀刻工艺基本上没有任何邻近效应，并且其特征在于在相对低的功率水平下的高蚀刻速率，高选择性（相对于例如二氧化硅）和优异的均匀性。通过将其他气体（例如氯）与含氟气体混合，可以选择性地控制蚀刻过程中实现的底切量。

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