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1. 发明授权

US06847045B2 High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission 失效
标题翻译：高电流雪崩隧道和注入隧道半导体 - 电介质 - 金属稳定的冷发射体，其模拟发射的负电子亲和机制
公开(公告)号：US06847045B2
公开(公告)日：2005-01-25
申请号：US09975297
申请日：2001-10-12
申请人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski , Henryk Birecki
发明人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski , Henryk Birecki
IPC分类号： H01J1/308 , H01J1/312 , H01L29/06 , H01L29/12
CPC分类号： B82Y10/00 , H01J1/308 , H01J1/312
摘要： A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.
摘要翻译：冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。这些结构使得可以将高电流发射与稳定（耐用）操作相结合。高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。此外，结构可以用当前最先进的技术制造。

2. 发明授权

US06577058B2 Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base 失效
标题翻译：基于具有控制基极的宽间隙半导体结构的具有负电子亲和力的注入冷发射体
公开(公告)号：US06577058B2
公开(公告)日：2003-06-10
申请号：US09974818
申请日：2001-10-12
申请人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski , Henryk Birecki
发明人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski , Henryk Birecki
IPC分类号： H01L2912
CPC分类号： H01J1/308
摘要： A cold electron emitter may include a heavily n+ doped wide band gap (WBG) substrate, a p-doped WBG region, and a low work function metallic layer (n+-p-M structure). A modification of this structure includes heavily p+ doped region between p region and M metallic layer (n+-p-p+-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible because the p-doped (or p+ heavily doped) WBG region acts as a negative electron affinity material when in contact with low work function metals. The injection emitters with the n+-p-M and n+-p-p+-M structures are stable since the emitters make use of relatively low extracting electric field and are not affected by contamination and/or absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.
摘要翻译：冷电子发射器可以包括重n +掺杂宽带隙（WBG）衬底，p掺杂WBG区和低功函数金属层（n + -p-M结构）。该结构的修改包括p区和M金属层（n + -p-p + -M结构）之间的重p +掺杂区。这些结构使得可以将高电流发射与稳定（耐用）操作相结合。高电流密度是可能的，因为当与低功函数金属接触时，p掺杂（或p +重掺杂）WBG区域充当负电子亲和材料。具有n + -p-M和n + -p-p + -M结构的注入发射体是稳定的，因为发射体使用相对低的提取电场，并且不受来自加速离子的污染和/或吸收的影响。此外，结构可以用当前最先进的技术制造。

3. 发明授权

US06809388B2 Magnetic sensor based on efficient spin injection into semiconductors 失效
公开(公告)号：US06809388B2
公开(公告)日：2004-10-26
申请号：US10284360
申请日：2002-10-31
申请人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski
发明人： Viatcheslav V. Ossipov , Alexandre M. Bratkovski
IPC分类号： H01L2976
CPC分类号： G01R33/06 , Y10T428/32
摘要： A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5%). A spin injection device with a semiconductor layer sandwiched between &dgr;-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.

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