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1. 发明申请

US20130074771A1 APPARATUS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 审中-公开
标题翻译：在线性系统中形成能量储存和光伏器件的设备
公开(公告)号：US20130074771A1
公开(公告)日：2013-03-28
申请号：US13682479
申请日：2012-11-20
申请人： VICTOR L. PUSHPARAJ , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
发明人： VICTOR L. PUSHPARAJ , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
IPC分类号： C23C16/54
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了一种用于在基底上形成复合材料的方法和装置。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。纤维网被引导通过各种处理室以形成复合材料。在另一个实施例中，大规模衬底包括离散衬底。离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。复合材料可用于形成储能装置和/或光伏器件。

2. 发明申请

US20110100955A1 APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 失效
标题翻译：在线性系统中形成能量储存和光伏器件的装置和方法
公开(公告)号：US20110100955A1
公开(公告)日：2011-05-05
申请号：US12885139
申请日：2010-09-17
申请人： VICTOR L. PUSHPARAJ , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
发明人： VICTOR L. PUSHPARAJ , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
IPC分类号： C23F1/00 , C23C16/22 , C23C16/44 , C23C16/46 , C23C16/00 , B82Y40/00
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了一种用于在基底上形成复合材料的方法和装置。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。纤维网被引导通过各种处理室以形成复合材料。在另一个实施例中，大规模衬底包括离散衬底。离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。复合材料可用于形成储能装置和/或光伏器件。

3. 发明授权

US08334017B2 Apparatus and methods for forming energy storage and photovoltaic devices in a linear system 失效
标题翻译：用于在线性系统中形成储能和光伏器件的装置和方法
公开(公告)号：US08334017B2
公开(公告)日：2012-12-18
申请号：US12885139
申请日：2010-09-17
申请人： Victor L. Pushparaj , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
发明人： Victor L. Pushparaj , Pravin K. Narwankar , Dieter Haas , Bipin Thakur , Mahesh Arcot , Vikas Gujar , Omkaram Nalamasu
IPC分类号： C23C16/00
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了一种用于在基底上形成复合材料的方法和装置。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。纤维网被引导通过各种处理室以形成复合材料。在另一个实施例中，大规模衬底包括离散衬底。离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。复合材料可用于形成储能装置和/或光伏器件。

4. 发明申请

US20110045349A1 3D APPROACH ON BATTERY AND SUPERCAPACITOR FABRICATION BY INITIATION CHEMICAL VAPOR DEPOSITION TECHNIQUES 有权
标题翻译：电化学蒸汽沉积技术电池和超级电容器制造三维方法
公开(公告)号：US20110045349A1
公开(公告)日：2011-02-24
申请号：US12858531
申请日：2010-08-18
申请人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
发明人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
IPC分类号： H01M10/058 , B05D5/12 , C23C16/00 , H01G9/07
CPC分类号： H01M4/661 , H01G9/0029 , H01G9/0032 , H01G9/155 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525 , H01M10/0565 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.
摘要翻译：提供了形成储能装置的方法和装置。在一个实施例中，提供了一种生产能量存储装置的方法。该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露，使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

5. 发明授权

US08603195B2 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques 有权
标题翻译：通过引发化学气相沉积技术的电池和超级电容器制造的3D方法
公开(公告)号：US08603195B2
公开(公告)日：2013-12-10
申请号：US12858531
申请日：2010-08-18
申请人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
发明人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
IPC分类号： H01M4/13 , H01M4/58 , H01M4/60 , H01M4/82 , H01M6/12 , H01M6/46 , B05D5/12
CPC分类号： H01M4/661 , H01G9/0029 , H01G9/0032 , H01G9/155 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525 , H01M10/0565 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.
摘要翻译：提供了形成储能装置的方法和装置。在一个实施例中，提供了一种生产能量存储装置的方法。该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露，使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

6. 发明授权

US08117987B2 Hot wire chemical vapor deposition (CVD) inline coating tool 有权
标题翻译：热线化学气相沉积（CVD）在线涂层工具
公开(公告)号：US08117987B2
公开(公告)日：2012-02-21
申请号：US12873299
申请日：2010-08-31
申请人： Dieter Haas , Pravin K. Narwankar , Randhir P. S. Thakur
发明人： Dieter Haas , Pravin K. Narwankar , Randhir P. S. Thakur
IPC分类号： A61D3/00
CPC分类号： C23C16/24 , C23C16/54 , H01L21/02532 , H01L21/0262
摘要： Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
摘要翻译：本文提供了热线化学气相沉积（HWCVD）的方法和装置。在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述基底被多个HWCVD源涂覆而不破坏真空。在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

7. 发明授权

US07871942B2 Methods for manufacturing high dielectric constant film 有权
标题翻译：制造高介电常数膜的方法
公开(公告)号：US07871942B2
公开(公告)日：2011-01-18
申请号：US12057113
申请日：2008-03-27
申请人： Shreyas S. Kher , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
发明人： Shreyas S. Kher , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31645 , C23C14/083 , C23C16/56 , H01L21/3141
摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
摘要翻译：公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

8. 发明授权

US07658973B2 Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure 有权
标题翻译：在超低压下用氮气快速热退火，在氮氧化硅中调整氮气分布
公开(公告)号：US07658973B2
公开(公告)日：2010-02-09
申请号：US10772893
申请日：2004-02-04
申请人： Pravin K. Narwankar , Gary E. Miner , Arnaud Lepert
发明人： Pravin K. Narwankar , Gary E. Miner , Arnaud Lepert
IPC分类号： B05D3/02 , C23C16/00 , B05D1/40 , B05D3/12 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/3105 , H01L21/3144 , H01L29/518 , H01L29/66181
摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
摘要翻译：一种形成包括氮的电介质膜的方法。该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。

9. 发明授权

US06454860B2 Deposition reactor having vaporizing, mixing and cleaning capabilities 有权
标题翻译：具有蒸发，混合和清洁能力的沉积反应器
公开(公告)号：US06454860B2
公开(公告)日：2002-09-24
申请号：US09179921
申请日：1998-10-27
申请人： Craig R. Metzner , Turgut Sahin , Gregory F. Redinbo , Pravin K. Narwankar , Patricia M. Liu
发明人： Craig R. Metzner , Turgut Sahin , Gregory F. Redinbo , Pravin K. Narwankar , Patricia M. Liu
IPC分类号： C23C1600
CPC分类号： C23C16/4557 , C23C16/407 , C23C16/44 , C23C16/4405 , C23C16/4411 , C23C16/4412 , C23C16/448 , C23C16/4481 , C23C16/452 , C23C16/45561 , C23C16/45565 , C23C16/54
摘要： An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
摘要翻译：提供一种集成沉积系统，其能够蒸发低蒸气压液体前体并将该蒸气输送到用于制造先进集成电路的处理区域中。集成沉积系统由加热的排气系统，远程等离子体发生器，处理室和液体输送系统组成，这些系统一起提供了一种商业可行且具有生产价值的系统，用于从低蒸汽压前体沉积大容量电介质材料，退火同时还提供商业上可行的原位清洁能力。

10. 发明授权

US08642376B2 Methods for depositing a material atop a substrate 有权
标题翻译：在衬底上沉积材料的方法
公开(公告)号：US08642376B2
公开(公告)日：2014-02-04
申请号：US13470768
申请日：2012-05-14
申请人： Sukti Chatterjee , Annamalai Lakshmanan , Joe Griffith Cruz , Pravin K. Narwankar
发明人： Sukti Chatterjee , Annamalai Lakshmanan , Joe Griffith Cruz , Pravin K. Narwankar
IPC分类号： H01L21/00 , H01L21/36 , H01L21/20 , H01L21/322
CPC分类号： H01L21/0237 , C23C16/02 , C23C16/24 , C23C16/45523 , C30B25/02 , C30B29/06 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.
摘要翻译：本文提供了在基板上沉积材料的方法。在一些实施例中，在衬底上沉积材料的方法可以包括将衬底暴露于含硅气体和还原气体; 增加含硅气体的流量，同时降低还原气体的流速以形成第一层; 以及在所述第一层顶上沉积第二层。

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