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1. 发明授权

US3932314A Hexaboride electron emissive material 失效
标题翻译：六硼化物电子发射材料
公开(公告)号：US3932314A
公开(公告)日：1976-01-13
申请号：US503471
申请日：1974-09-05
申请人： Ushio Kawabe , Shigehiko Yamamoto , Toshiyuki Aita , Yukio Honda
发明人： Ushio Kawabe , Shigehiko Yamamoto , Toshiyuki Aita , Yukio Honda
IPC分类号： H01J1/30 , C01B35/04 , C04B35/58 , H01J1/14 , H01J1/148 , H01J1/304 , H01B1/06
CPC分类号： H01J1/148 , H01J1/304
摘要： An electron emissive material of the formula (Y.sub.1.sub.-x EU.sub.x)B.sub.6 having the calcium hexaboride type crystal structure can easily produce hexaborides of the single phase. These borides have a number of merits such as small work function, high mechanical properties and low vapor pressure, and they are far more excellent than prior-art materials when used in a thermionic emission cathode and a field emission type cold cathode.
摘要翻译：具有六硼化钙型晶体结构的式（Y1-xEUx）B6的电子发射材料可以容易地生产单相六硼化物。这些硼化物具有功函数小，机械性能好，蒸气压低的优点，而且当用于热电子发射阴极和场致发射型冷阴极时，它们比现有技术的材料要好得多。

2. 发明授权

US4260665A Electron tube cathode and method for producing the same 失效
标题翻译：电子管阴极及其制造方法
公开(公告)号：US4260665A
公开(公告)日：1981-04-07
申请号：US946194
申请日：1978-09-27
申请人： Toshiyuki Aida , Sadanori Taguchi , Isamu Yuito , Ushio Kawabe , Shigehiko Yamamoto , Yukio Honda , Norio Shibata , Hiroshi Okano
发明人： Toshiyuki Aida , Sadanori Taguchi , Isamu Yuito , Ushio Kawabe , Shigehiko Yamamoto , Yukio Honda , Norio Shibata , Hiroshi Okano
IPC分类号： H01J1/26 , H01J1/14 , H01J1/15 , H01J9/04
CPC分类号： H01J9/04 , H01J1/14 , Y10T428/12028 , Y10T428/12618 , Y10T428/12875 , Y10T428/12944
摘要： An electron tube cathode in such a structure comprising a Ni-W-Zr alloy (W content: 20-28 wt. %) having a grain size of 4-10 .mu.m as a base metal, a 1,000-2,000 A-thick Pt film provided on the surface of the base metal, and an electron emitting material layer consisting of alkaline earth metal oxide provided on the Pt film has less emission lowering and less peeling of the electron emitting material layer, even if placed in a long time service. The electron tube cathode can be produced according to a method comprising (i) a step of annealing a base metal of Ni-W-Zr alloy (W content: 20-28 wt. %) at 1,000.degree.-1,200.degree. C., (ii) a step of providing a 1,000-2,000 A thick Pt film on the surface of the base metal, and (iii) a step of providing an electron emitting material layer consisting of alkaline earth metal oxide on the Pt film.
摘要翻译：这种结构中的电子管阴极，其特征在于：以贱金属为基准的粒径为4-10μm的Ni-W-Zr合金（W含量：20〜28重量％），1000〜并且由于设置在Pt膜上的由碱土类金属氧化物构成的电子发射材料层即使放置在长时间的服务中也具有较少的发射降低和较少的电子发射材料层的剥离。电子管阴极可以根据以下方法制造：（i）在1000-1200℃下退火Ni-W-Zr合金的母材（W含量：20-28重量％）的步骤，（ ii）在母材表面上提供1,000-2,000A厚的Pt膜的步骤，和（iii）在Pt膜上提供由碱土金属氧化物构成的电子发射材料层的步骤。

3. 发明授权

US4291252A Electron tube cathode 失效
标题翻译：电子管阴极
公开(公告)号：US4291252A
公开(公告)日：1981-09-22
申请号：US95933
申请日：1979-11-20
申请人： Toshiyuki Aida , Shigehiko Yamamoto , Sadanori Taguchi , Isamu Yuito , Yukio Honda , Ushio Kawabe , Akira Misumi , Takao Kawamura , Hiroshi Fukushima , Yoshio Degawa
发明人： Toshiyuki Aida , Shigehiko Yamamoto , Sadanori Taguchi , Isamu Yuito , Yukio Honda , Ushio Kawabe , Akira Misumi , Takao Kawamura , Hiroshi Fukushima , Yoshio Degawa
IPC分类号： H01J1/14 , H01J19/06 , H01K1/04
CPC分类号： H01J1/14
摘要： An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.
摘要翻译：电子管阴极具有插入在基底金属和电子发射材料之间的复合抑制层结构，以抑制通过贱金属与电子发射材料的反应形成的界面层。复合层结构包括Pt或Re的薄层和Zr和/或Hf的氧化物层。结果，防止了界面层的形成，延长了电子管阴极的使用寿命。

4. 发明授权

US4193013A Cathode for an electron source and a method of producing the same 失效
标题翻译：电子源用阴极及其制造方法
公开(公告)号：US4193013A
公开(公告)日：1980-03-11
申请号：US897406
申请日：1978-04-18
申请人： Masaaki Futamoto , Ushio Kawabe , Shigeyuki Hosoki , Tsutomu Komoda , Shigehiko Yamamoto
发明人： Masaaki Futamoto , Ushio Kawabe , Shigeyuki Hosoki , Tsutomu Komoda , Shigehiko Yamamoto
IPC分类号： B44F1/12 , H01J1/15 , H01J1/304 , H01J9/02 , H01J9/04 , H01J9/18
CPC分类号： H01J1/15 , H01J1/304
摘要： A cathode for an electron source according to this invention comprises an emitter tip made of an electron emissive material, a filament for holding the emitter tip, and a binder for binding the emitter tip and the filament, the filament and the binder being made of glassy carbon. The binder can have a carbide or boride powder incorporated therein. The cathode according to this invention can be produced by using a thermosetting resin of predetermined shape as the starting material of the filament, fixing the emitter tip to a predetermined position of the thermosetting resin with the adhesive agent made of the raw thermosetting resin, and heating the resultant assembly in a non-oxidizing atmosphere to carbonize the resinous portions. This cathode is structurally very simple. Moreover, the adhesion between the filament and the emitter tip is excellent, and the emitter tip can be heated to high temperatures above 2,000.degree. C. by causing current to flow through the cathode.
摘要翻译：根据本发明的用于电子源的阴极包括由电子发射材料制成的发射极尖端，用于保持发射极尖端的灯丝和用于结合发射极尖端和灯丝的粘合剂，灯丝和粘合剂由玻璃状碳。粘合剂可以具有并入其中的碳化物或硼化物粉末。根据本发明的阴极可以通过使用预定形状的热固性树脂作为丝的起始材料，使用由原始热固性树脂制成的粘合剂将发射极尖端固定到热固性树脂的预定位置，并加热所得组合物在非氧化气氛中以使树脂部分碳化。该阴极在结构上非常简单。此外，灯丝和发射极尖端之间的粘附性优异，并且通过使电流流过阴极，可以将发射极尖端加热到高于2000℃的高温。

5. 发明授权

US4400648A Impregnated cathode 失效
标题翻译：浸渍阴极
公开(公告)号：US4400648A
公开(公告)日：1983-08-23
申请号：US192870
申请日：1980-10-01
申请人： Sadanori Taguchi , Yukio Honda , Toshiyuki Aida , Ushio Kawabe
发明人： Sadanori Taguchi , Yukio Honda , Toshiyuki Aida , Ushio Kawabe
IPC分类号： H01J1/28 , H01J1/14
CPC分类号： H01J1/28
摘要： An impregnated cathode having a complex porous body of one-body construction which is mounted in a metal sleeve and in which a partition layer made of a porous material having a porosity less than 17% is arranged in close contact with an impregnated layer made of a porous material containing an electron emissive material. The aforementioned porous partition layer takes the place of the conventional partition plate of refractory metal. The impregnated cathode according to the present invention can not only have its size reduced without any difficulty but also enjoy a high emission current density with a remarkably small dispersion.
摘要翻译：具有安装在金属套筒中的单体结构的复合多孔体的浸渍阴极，其中由孔隙率小于17％的多孔材料制成的分隔层紧密接触于由含有电子发射材料的多孔材料。上述多孔分隔层代替常规的难熔金属隔板。根据本发明的浸渍阴极不仅能够使其尺寸减小而且难以实现，而且还可以获得非常小的色散的高发射电流密度。

6. 发明授权

US5442196A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5442196A
公开(公告)日：1995-08-15
申请号：US201410
申请日：1994-02-24
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

7. 发明授权

US5424281A Oxide-superconduction grain boundary tunneling device 失效
标题翻译：氧化物超导晶界隧道装置
公开(公告)号：US5424281A
公开(公告)日：1995-06-13
申请号：US9082
申请日：1993-01-26
申请人： Yoshinobu Tarutani , Ushio Kawabe
发明人： Yoshinobu Tarutani , Ushio Kawabe
IPC分类号： H01L39/22 , H01L39/24 , H01B12/00
CPC分类号： H01L39/225 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/776
摘要： An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.
摘要翻译：氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。氧化物超导体形成在具有凹部的基板上，并且其包括沿着凹部的晶界。隧道势垒层沿着晶界形成，并且由元素F，Cl，Br，I，C，O，S，P或N的任何材料构成，由这些元素组成的混合物和含这种元素，该材料被引入晶粒边界附近和/或晶粒间隙附近。

8. 发明授权

US5326745A Superconducting device with C-axis orientation perpendicular to current flow 失效
标题翻译：具有C轴取向垂直于电流的超导装置
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L23/48
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

9. 发明授权

US5126801A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5126801A
公开(公告)日：1992-06-30
申请号：US412201
申请日：1989-09-25
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. In an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is incredible by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布，增益是令人难以置信的。

10. 发明授权

US4843446A Superconducting photodetector 失效
标题翻译：超导光电探测器
公开(公告)号：US4843446A
公开(公告)日：1989-06-27
申请号：US246926
申请日：1988-09-19
申请人： Toshikazu Nishino , Ushio Kawabe , Shinya Kominami
发明人： Toshikazu Nishino , Ushio Kawabe , Shinya Kominami
IPC分类号： H01L31/08 , H01L31/113 , H01L39/22
CPC分类号： H01L31/113 , H01L31/08 , H01L39/228
摘要： A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of the surfaces of which is an incidence surface of light, and means capable of accumulating carriers in the semiconductor layer is disposed.A photodetector having high performance can thus be obtained and can be used as an interface of a system at a cryogenic temperature.
摘要翻译：公开了一种通过利用超导性在低温下工作的光电检测器。多个相互间隔开的超导层形成为与半导体层接触，半导体层的至少一个表面是光的入射面，并且能够在半导体层中积聚载流子的装置是处置。因此可以获得具有高性能的光电检测器，并且可以用作系统在低温温度下的界面。

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