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    • 3. 发明授权
    • Plasmonic phototransistor
    • 等离子体光电晶体管
    • US09356178B2
    • 2016-05-31
    • US14516330
    • 2014-10-16
    • University of Central Florida Research Foundation, Inc.
    • Robert PealeMasahiro IshigamiChristian W. Smith
    • G01N21/00H01L31/113H01L31/0232G01J1/42
    • H01L31/1136G01J1/42H01L31/02327H01L31/028Y02E10/547
    • A plasmonic phototransistor includes a photon to surface-plasmon-polariton (SPP) transducer including and an optical coupling structure configured to receive incident light and an electrically conducting layer having a first and a second surface. The second surface is on the optical coupling structure and the first surface generates SPPs responsive to the incident light. A gate dielectric layer is on the first surface. A two dimensional (2D) electrically conductive material is on the gate dielectric layer having electrical properties sensitive to electromagnetic fields of the SPP. Source and drain contacts are on the 2D electrically conductive material. Dynamic electric fields of the SPPs reach the 2D electrically conductive material that are operable to electric field-induce modulation of an electrical conductance of the 2D electrically conductive material which is sensed from the source and drain contacts.
    • 等离子体激发光电晶体管包括光子到表面等离子体激元(SPP)换能器,其包括被配置为接收入射光的光耦合结构和具有第一和第二表面的导电层。 第二表面在光耦合结构上,第一表面产生响应入射光的SPP。 栅介质层位于第一表面上。 二维(2D)导电材料在具有对SPP的电磁场敏感的电特性的栅介质层上。 源极和漏极触点位于2D导电材料上。 SPP的动态电场到达2D导电材料,其可操作以电场诱导从源极和漏极触点感测的2D导电材料的电导的调制。