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1. 发明申请

US20120015886A1 METHOD FOR PREPARING RECOMBINANT PEPTIDE FROM SPIDER VENOM AND METHOD FOR RELIEVING PAIN 审中-公开
标题翻译：从天花板制备重组蛋白的方法及缓解疼痛的方法
公开(公告)号：US20120015886A1
公开(公告)日：2012-01-19
申请号：US12907475
申请日：2010-10-19
申请人： UhTaek OH , Byung Moon Kim , Seung Pyo Park , Heung Sik Na
发明人： UhTaek OH , Byung Moon Kim , Seung Pyo Park , Heung Sik Na
IPC分类号： A61K38/17 , A61P29/00
CPC分类号： C07K14/43518 , C12N15/815
摘要： The present invention relates to a method for producing a recombinant, spider toxin peptide and analgesic compositions containing said peptide. More specifically, the present invention relates to a method in which the gene for GsMTx4 is subcloned into a vector, so that it is linked to a secretion signal sequence of the alpha factor and under the control of methanol-inducible alcohol oxidase (AOX) promoter to construct a recombinant yeast expression plasmid. Yeast cells are transformed with this plasmid to produce the GsMTx4 peptide and analgesic compositions containing said peptide. The recombinant yeast expression system of the present invention affords a more stable method for producing GsMTx4 than its natural route. Thus the GsMTx4 peptide and its derivatives produced by the method of this invention can be used in the cure of related diseases such as heart failure as the peptide specifically inhibits mechanosensitive ion channels.
摘要翻译：本发明涉及一种生产含有所述肽的重组蜘蛛毒素肽和镇痛组合物的方法。更具体地，本发明涉及将GsMTx4的基因亚克隆到载体中的方法，使其与α因子的分泌信号序列连接并在甲醇诱导型醇氧化酶（AOX）启动子的控制下构建重组酵母表达质粒。用该质粒转化酵母细胞以产生含有所述肽的GsMTx4肽和镇痛组合物。本发明的重组酵母表达系统提供比其自然途径更稳定的产生GsMTx4的方法。因此，通过本发明方法产生的GsMTx4肽及其衍生物可用于治疗诸如心力衰竭等相关疾病，因为该肽特异性抑制机械敏感离子通道。

2. 发明申请

US20090023183A1 Method For Preparing Recombinant Peptide From Spider Venom and Analgesic Composition Containing The Peptide 审中-公开
标题翻译：从蜘蛛毒液制备重组肽的方法和含有肽的止痛组合物
公开(公告)号：US20090023183A1
公开(公告)日：2009-01-22
申请号：US12090664
申请日：2006-10-18
申请人： UhTaek Oh , Byung Moon Kim , Seung Pyo Park , Heung Sik Na
发明人： UhTaek Oh , Byung Moon Kim , Seung Pyo Park , Heung Sik Na
IPC分类号： C12P21/02 , C07H21/04 , C07K14/435
CPC分类号： C07K14/43518 , C12N15/815
摘要： The present invention relates to a method for producing a recombinant, spider toxin peptide and analgesic compositions containing said peptide. More specifically, the present invention relates to a method in which the gene for GsMTx4 is subcloned into a vector, so that it is linked to a secretion signal sequence of the alpha factor and under the control of methanol-inducible alcohol oxidase (AOX) promoter to construct a recombinant yeast expression plasmid. Yeast cells are transformed with this plasmid to produce the GsMTx4 peptide and analgesic compositions containing said peptide. The recombinant yeast expression system of the present invention affords a more stable method for producing GsMTx4 than its natural route. Thus the GsMTx4 peptide and its derivatives produced by the method of this invention can be used in the cure of related diseases such as heart failure as the peptide specifically inhibits mechanosensitive ion channels.
摘要翻译：本发明涉及一种生产含有所述肽的重组蜘蛛毒素肽和镇痛组合物的方法。更具体地，本发明涉及将GsMTx4的基因亚克隆到载体中的方法，使其与α因子的分泌信号序列连接并在甲醇诱导型醇氧化酶（AOX）启动子的控制下构建重组酵母表达质粒。用该质粒转化酵母细胞以产生含有所述肽的GsMTx4肽和镇痛组合物。本发明的重组酵母表达系统提供比其自然途径更稳定的产生GsMTx4的方法。因此，通过本发明方法产生的GsMTx4肽及其衍生物可用于治疗诸如心力衰竭等相关疾病，因为该肽特异性抑制机械敏感离子通道。

3. 发明授权

US07514330B2 Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same 失效
标题翻译：具有用于防止门禁故障的阶梯式门的半导体装置及其制造方法
公开(公告)号：US07514330B2
公开(公告)日：2009-04-07
申请号：US11833353
申请日：2007-08-03
申请人： Seung Pyo Park
发明人： Seung Pyo Park
IPC分类号： H01L21/336
CPC分类号： H01L29/66659 , H01L27/10876 , H01L29/66651
摘要： A semiconductor device and a method of manufacturing the same capable of preventing a not open fail of a landing plug contact caused by the leaning of a gate. The method includes the steps of preparing a semiconductor substrate, forming first recesses by etching an active area of the semiconductor substrate, filling a conductive layer in the first recesses, forming a second recess by etching a predetermined part of the active area, forming under stepped gates, forming a gate insulating layer on a surface of the semiconductor substrate, forming a channel layer on the gate insulating layer, forming source/drain areas in the semiconductor substrate, forming an interlayer insulating film on an entire surface of the semiconductor substrate, and forming a landing plug in the interlayer insulating film such that the landing plug makes contact with the source/drain areas, respectively.
摘要翻译：一种半导体器件及其制造方法，其能够防止由栅极倾斜引起的着陆插头接触不能打开故障。该方法包括以下步骤：制备半导体衬底，通过蚀刻半导体衬底的有源区，形成第一凹槽，填充第一凹槽中的导电层，通过蚀刻有源区的预定部分形成第二凹槽，在所述半导体衬底的表面上形成栅极绝缘层，在所述栅极绝缘层上形成沟道层，在所述半导体衬底中形成源极/漏极区域，在所述半导体衬底的整个表面上形成层间绝缘膜，以及在所述层间绝缘膜中形成着陆塞，使得所述着陆塞分别与所述源/漏区接触。

4. 发明申请

US20070045723A1 Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same 有权
公开(公告)号：US20070045723A1
公开(公告)日：2007-03-01
申请号：US11251700
申请日：2005-10-17
申请人： Seung Pyo Park
发明人： Seung Pyo Park
IPC分类号： H01L29/94
CPC分类号： H01L29/66659 , H01L27/10876 , H01L29/66651
摘要： A semiconductor device and a method of manufacturing the same capable of preventing a not open fail of a landing plug contact caused by the leaning of a gate. The method includes the steps of preparing a semiconductor substrate, forming first recesses by etching an active area of the semiconductor substrate, filling a conductive layer in the first recesses, forming a second recess by etching a predetermined part of the active area, forming under stepped gates, forming a gate insulating layer on a surface of the semiconductor substrate, forming a channel layer on the gate insulating layer, forming source/drain areas in the semiconductor substrate, forming an interlayer insulating film on an entire surface of the semiconductor substrate, and forming a landing plug in the interlayer insulating film such that the landing plug makes contact with the source/drain areas, respectively.

5. 发明授权

US07928532B2 Fuse box including a guard ring electrically connected to the fuse pattern and method of forming the same 失效
标题翻译：保险丝盒包括电连接到保险丝图案的保护环及其形成方法
公开(公告)号：US07928532B2
公开(公告)日：2011-04-19
申请号：US11966379
申请日：2007-12-28
申请人： Seung Pyo Park
发明人： Seung Pyo Park
IPC分类号： H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse box includes a fuse pattern having a rugged profile and an interlayer insulating film including a fuse blowing window to fill the fuse pattern.
摘要翻译：保险丝盒包括具有凹凸轮廓的熔丝图案和包括熔丝吹扫窗口以填充熔丝图案的层间绝缘膜。

6. 发明授权

US07268391B2 Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same 有权
标题翻译：具有用于防止门禁故障的阶梯式门的半导体装置及其制造方法
公开(公告)号：US07268391B2
公开(公告)日：2007-09-11
申请号：US11251700
申请日：2005-10-17
申请人： Seung Pyo Park
发明人： Seung Pyo Park
IPC分类号： H01L29/76
CPC分类号： H01L29/66659 , H01L27/10876 , H01L29/66651
摘要： A semiconductor device and a method of manufacturing the same capable of preventing a not open fail of a landing plug contact caused by the leaning of a gate. The method includes the steps of preparing a semiconductor substrate, forming first recesses by etching an active area of the semiconductor substrate, filling a conductive layer in the first recesses, forming a second recess by etching a predetermined part of the active area, forming under stepped gates, forming a gate insulating layer on a surface of the semiconductor substrate, forming a channel layer on the gate insulating layer, forming source/drain areas in the semiconductor substrate, forming an interlayer insulating film on an entire surface of the semiconductor substrate, and forming a landing plug in the interlayer insulating film such that the landing plug makes contact with the source/drain areas, respectively.
摘要翻译：一种半导体器件及其制造方法，其能够防止由栅极倾斜引起的着陆插头接触不能打开故障。该方法包括以下步骤：制备半导体衬底，通过蚀刻半导体衬底的有源区，形成第一凹槽，填充第一凹槽中的导电层，通过蚀刻有源区的预定部分形成第二凹槽，在所述半导体衬底的表面上形成栅极绝缘层，在所述栅极绝缘层上形成沟道层，在所述半导体衬底中形成源极/漏极区域，在所述半导体衬底的整个表面上形成层间绝缘膜，以及在所述层间绝缘膜中形成着陆塞，使得所述着陆塞分别与所述源/漏区接触。

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