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1. 发明申请

US20180114881A1 LIGHT EMITTING DEVICE LIGHT-AMPLIFIED WITH GRAPHENE AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20180114881A1
公开(公告)日：2018-04-26
申请号：US15843392
申请日：2017-12-15
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Chang Oh Kim , Sung Kim
IPC分类号： H01L33/40 , H01L33/42
摘要： The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emiting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.

2. 发明授权

US10714648B2 Solar cell with graphene-silicon quantum dot hybrid structure and method of manufacturing the same 有权
公开(公告)号：US10714648B2
公开(公告)日：2020-07-14
申请号：US15415311
申请日：2017-01-25
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Sung Kim , Jong Min Kim
IPC分类号： H01L31/0224 , H01L31/0384 , H01L31/048 , B82Y30/00 , H01L31/074 , H01L31/18 , B82Y40/00
摘要： Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.

3. 发明申请

US20150206940A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150206940A1
公开(公告)日：2015-07-23
申请号：US14419138
申请日：2012-12-28
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Sung Kim , Dong Hee Shin
IPC分类号： H01L29/16 , H01L21/324 , H01L21/02 , H01L21/04 , H01L29/861 , H01L29/66
CPC分类号： H01L29/1606 , H01L21/02444 , H01L21/02527 , H01L21/041 , H01L21/043 , H01L21/324 , H01L29/6603 , H01L29/66136 , H01L29/861
摘要： The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical tunneling-junction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced by varying the doping concentration. The semiconductor device includes first graphene of a first doping type, and second graphene of a second doping type different from the first doping type, which is arranged on the first graphene and is in contact therewith.
摘要翻译：本发明的目的是通过评估通过改变掺杂浓度产生的石墨烯p-n结的光学和电学特性来提供含有石墨烯p-n垂直隧道结二极管的半导体器件。半导体器件包括第一掺杂类型的第一石墨烯和布置在第一石墨烯上并与其接触的第一掺杂类型的第二掺杂类型的第二石墨烯。

4. 发明申请

US20160351738A1 GRAPHENE QUANTUM DOT PHOTODETECTOR AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：石墨量子点光源及其制造方法
公开(公告)号：US20160351738A1
公开(公告)日：2016-12-01
申请号：US14890001
申请日：2013-07-03
申请人： University-Industry Cooperation Group of Kyung Hee University
发明人： Suk Ho Choi , Sung Kim , Chang Oh Kim , Dong Hee Shin
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/18 , H01L31/028
CPC分类号： H01L31/035218 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B32/182 , H01L31/028 , H01L31/09 , Y02E10/547
摘要： Provided is a graphene photodetector. The graphene photodetector comprises a first graphene, a graphene quantum dot (GQD) layer formed on the first graphene and including a plurality of GQDs and a second graphene provided on the GQD layer.
摘要翻译：提供了石墨烯光电探测器。石墨烯光电检测器包括第一石墨烯，形成在第一石墨烯上的石墨烯量子点（GQD）层，并且包括多个GQD和设置在GQD层上的第二石墨烯。

5. 发明授权

US09343532B2 Semiconductor device containing graphene p-n junctions and method for producing same 有权
标题翻译：含有石墨烯p-n结的半导体装置及其制造方法
公开(公告)号：US09343532B2
公开(公告)日：2016-05-17
申请号：US14419138
申请日：2012-12-28
申请人： UNIVERSITY—INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Sung Kim , Dong Hee Shin
IPC分类号： H01L29/16 , H01L29/88 , H01L21/328 , H01L29/861 , H01L21/04 , H01L21/324 , H01L29/66 , H01L21/02
CPC分类号： H01L29/1606 , H01L21/02444 , H01L21/02527 , H01L21/041 , H01L21/043 , H01L21/324 , H01L29/6603 , H01L29/66136 , H01L29/861
摘要： The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical tunneling-junction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced by varying the doping concentration. The semiconductor device includes first graphene of a first doping type, and second graphene of a second doping type different from the first doping type, which is arranged on the first graphene and is in contact therewith.
摘要翻译：本发明的目的是通过评估通过改变掺杂浓度产生的石墨烯p-n结的光学和电学特性来提供含有石墨烯p-n垂直隧道结二极管的半导体器件。半导体器件包括第一掺杂类型的第一石墨烯和布置在第一石墨烯上并与其接触的第一掺杂类型的第二掺杂类型的第二石墨烯。

6. 发明授权

US10056520B2 Photodiode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same 有权
公开(公告)号：US10056520B2
公开(公告)日：2018-08-21
申请号：US15502807
申请日：2014-11-20
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Dong Hee Shin , Sung Kim
IPC分类号： H01L31/18 , C01B31/04 , H01L31/0352 , H01L31/0288 , H01L31/109 , B82Y40/00 , B82Y30/00
CPC分类号： H01L31/1804 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/186 , C01B32/194 , H01L31/0288 , H01L31/035218 , H01L31/03529 , H01L31/0384 , H01L31/09 , H01L31/10 , H01L31/109 , Y10S977/734 , Y10S977/774 , Y10S977/814 , Y10S977/843 , Y10S977/847 , Y10S977/89 , Y10S977/896 , Y10S977/948
摘要： Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.

7. 发明授权

US09343601B2 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US09343601B2
公开(公告)日：2016-05-17
申请号：US14758593
申请日：2013-06-27
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Sung Kim , Chang Oh Kim
IPC分类号： H01L31/028 , H01L31/0392 , H01L31/0745
CPC分类号： H01L31/028 , H01L31/03921 , H01L31/0745 , Y02E10/547
摘要： Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.
摘要翻译：提供了一种通过根据掺杂量来评估制造的石墨烯p-n垂直结的光电检测特性的包括石墨烯p-n均匀垂直结二极管的光电检测器。光电检测器包括基板和具有pn均匀垂直结的石墨烯作为形成在基板上的光电检测层，其中光检测层在350nm至1100nm的范围内具有10E11（Jones）或更高的可检测性，第一和第二在光检测层上形成电极。

8. 发明申请

US20160056340A1 LIGHT EMITTING DEVICE LIGHT-AMPLIFIED WITH GRAPHENE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：用石墨放大的发光装置及其制造方法
公开(公告)号：US20160056340A1
公开(公告)日：2016-02-25
申请号：US14779448
申请日：2013-06-21
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Chang Oh Kim , Sung Kim
IPC分类号： H01L33/40
CPC分类号： H01L33/40 , H01L33/42 , H01L2933/0016
摘要： The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic in device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.
摘要翻译：本发明的目的是提供一种用于制造器件中的光放大光电子器件的方法，其中原始或掺杂的石墨烯被转移到其上。具体地说，该方法包括以下步骤：将第一电极作为薄膜沉积在发光器件上; 在电极薄膜上转移原始或掺杂的石墨烯; 蚀刻与已转印的转印石墨烯的电极薄膜接触的发光器件，从而去除其上的电极的一部分; 在蚀刻的发光器件上的旋涂光致抗蚀剂; 从旋转涂覆的发光器件去除光致抗蚀剂，由此形成旋转形式的电极薄膜，并将原始转移到或者被掺杂到电极薄膜上的石墨烯; 以及在第二电极上沉积金属。

9. 发明授权

US10535802B2 Light emitting device light-amplified with graphene and method for manufacturing same 有权
公开(公告)号：US10535802B2
公开(公告)日：2020-01-14
申请号：US15843392
申请日：2017-12-15
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho Choi , Chang Oh Kim , Sung Kim
IPC分类号： H01L33/40 , H01L33/42 , H01L33/38 , H01L33/20
摘要： The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.

10. 发明申请

US20190312174A1 LIGHT EMITTING DEVICE FOR LIGHT AMPLIFICATION USING GRAPHENE QUANTUM DOT AND METHOD FOR PRODUCING THE DEVICE 审中-公开
公开(公告)号：US20190312174A1
公开(公告)日：2019-10-10
申请号：US16375872
申请日：2019-04-05
申请人： Sangmyung University Cheonan Council for Industry- Academic Cooperation Foundation , University-Industry Cooperation Group Of Kyung Hee University
发明人： Sung Won HWANG , Suk Ho Choi
IPC分类号： H01L33/06 , H01L33/26 , H01L33/00
摘要： The present invention relates to a light-emitting device for light amplification using graphene quantum dots and a method of manufacturing the same, which includes a first conductive semiconductor base layer; a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer sequentially formed from inside to outside; and a graphene quantum dot coating layer disposed on one or both of a surface and an interior of the nanowire, thereby providing a light-emitting device which maximizes light extraction and light amplification.

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