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1. 外观设计

USD674759S1 Wafer carrier 有权
公开(公告)号：USD674759S1
公开(公告)日：2013-01-22
申请号：US29385727
申请日：2011-02-18
申请人： Chung-Ying Chang , Tzu-Ching Yang
设计人： Chung-Ying Chang , Tzu-Ching Yang , Chia-Sheng Chang

2. 发明授权

US09068264B2 Epitaxial growth systems 有权
标题翻译：外延生长系统
公开(公告)号：US09068264B2
公开(公告)日：2015-06-30
申请号：US13021330
申请日：2011-02-04
申请人： Tzu-Ching Yang , Chung-Ying Chang
发明人： Tzu-Ching Yang , Chung-Ying Chang
IPC分类号： C23C16/00 , C23C16/458 , C30B25/10 , C30B25/12
CPC分类号： C30B25/10 , C23C16/4585 , C23C16/4586 , C30B25/12
摘要： Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.
摘要翻译：公开了一种外延生长系统，包括外延生长反应器室，包括支撑表面并设置在外延生长反应器室中的基座以及设置在支撑表面上的多个晶片固定元件。基座的支撑面包括边缘，并且每个晶片固定元件包括边界。至少三个第一加热元件设置在基座下方并且平行于支撑表面布置。

3. 发明申请

US20110120376A1 EPITAXIAL GROWTH SYSTEMS 有权
标题翻译：外来生长系统
公开(公告)号：US20110120376A1
公开(公告)日：2011-05-26
申请号：US13021330
申请日：2011-02-04
申请人： Tzu-Ching Yang , Chung-Ying Chang
发明人： Tzu-Ching Yang , Chung-Ying Chang
IPC分类号： C23C16/511
CPC分类号： C30B25/10 , C23C16/4585 , C23C16/4586 , C30B25/12
摘要： Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.
摘要翻译：公开了一种外延生长系统，包括外延生长反应器室，包括支撑表面并设置在外延生长反应器室中的基座以及设置在支撑表面上的多个晶片固定元件。基座的支撑面包括边缘，并且每个晶片固定元件包括边界。至少三个第一加热元件设置在基座下方并且平行于支撑表面布置。

4. 发明授权

US06544868B2 Method of manufacturing light emitting diode with low-receptivity p-type impurity layers formed by microwave treatment 有权
标题翻译：通过微波处理形成低电阻P型杂质层的发光二极管的制造方法
公开(公告)号：US06544868B2
公开(公告)日：2003-04-08
申请号：US10131136
申请日：2002-04-25
申请人： Tzong-Liang Tsai , Chung-Ying Chang
发明人： Tzong-Liang Tsai , Chung-Ying Chang
IPC分类号： H01L2120
CPC分类号： H01L33/0095 , H01L21/3245
摘要： The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
摘要翻译：本发明提供一种在衬底上制造低电阻率p型化合物半导体材料的方法。本发明的方法包括以下步骤：通过HVPE，OMVPE或MBE在衬底上形成p型杂质掺杂化合物半导体层，并在p型杂质掺杂化合物半导体层上施加微波处理一段时间。根据本发明，高电阻率p型杂质掺杂化合物半导体层被转换为低电阻率p型化合物半导体材料。

5. 发明授权

US06441403B1 Semiconductor device with roughened surface increasing external quantum efficiency 有权
标题翻译：具有粗糙表面的半导体器件增加了外部量子效率
公开(公告)号：US06441403B1
公开(公告)日：2002-08-27
申请号：US09688605
申请日：2000-10-14
申请人： Chih-Sung Chang , Tzong-Liang Tsai , Chung-Ying Chang
发明人： Chih-Sung Chang , Tzong-Liang Tsai , Chung-Ying Chang
IPC分类号： H01L3300
CPC分类号： H01L33/22 , H01L33/32
摘要： The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.
摘要翻译：本发明提供一种具有增加其外部量子效率的粗糙表面的半导体器件。半导体器件表面的粗化通过外延生长技术进行，其可以包括氢化物气相外延（HVPE）技术，有机金属气相外延（OMVPE）技术或分子束外延（MBE）技术。

6. 发明授权

US06274674B1 Reactive hot melt adhesive 有权
标题翻译：活性热熔胶
公开(公告)号：US06274674B1
公开(公告)日：2001-08-14
申请号：US09257827
申请日：1999-02-25
申请人： Chung-Ying Chang , Gary J. Walsworth
发明人： Chung-Ying Chang , Gary J. Walsworth
IPC分类号： C08L2706
CPC分类号： B32B7/12 , B32B27/40 , B32B2375/00 , C08G18/12 , C08G18/4045 , C08G2170/20 , C08L75/04 , C08L2666/04 , C08L2666/14 , C09J127/06 , C09J175/04 , Y10T428/24996 , Y10T428/249992 , Y10T428/249993 , Y10T428/3154 , Y10T428/31551 , Y10T428/31699 , C08G18/307
摘要： The present invention relates to solvent free, moisture-curable, reactive hot melt adhesive compositions that are solid at room temperature, methods of making the compositions, and laminates prepared using the compostions. The compositions are a mixture comprising an isocyanate terminated prepolymer and a thermoplastic vinyl chloride copolymer.
摘要翻译：本发明涉及在室温下为固体的无溶剂，可湿固化的反应性热熔粘合剂组合物，制备组合物的方法和使用该组合物制备的层压材料。组合物是包含异氰酸酯封端的预聚物和热塑性氯乙烯共聚物的混合物。

7. 发明授权

US09029890B2 Light-emitting device having patterned substrate and method of manufacturing thereof 有权
标题翻译：具有图案化基板的发光装置及其制造方法
公开(公告)号：US09029890B2
公开(公告)日：2015-05-12
申请号：US13547347
申请日：2012-07-12
申请人： Chung-Ying Chang , Dennis Wang , Jenq-Dar Tsay
发明人： Chung-Ying Chang , Dennis Wang , Jenq-Dar Tsay
IPC分类号： H01L33/00 , H01L33/20
CPC分类号： H01L33/20 , H01L33/007
摘要： A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
摘要翻译：本文公开的发光器件包括具有多个锥体的图案化衬底，其中在两个相邻锥体之间的空间。形成在锥体上的发光叠层。此外，锥体包括锥体的顶部区域和锥体的底部区域的面积比小于0.0064。

8. 发明申请

US20140014974A1 LIGHT-EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：具有图案基板的发光装置及其制造方法
公开(公告)号：US20140014974A1
公开(公告)日：2014-01-16
申请号：US13547347
申请日：2012-07-12
申请人： Chung-Ying Chang , Dennis Wang , Jenq-Dar Tsay
发明人： Chung-Ying Chang , Dennis Wang , Jenq-Dar Tsay
IPC分类号： H01L33/24
CPC分类号： H01L33/20 , H01L33/007
摘要： A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
摘要翻译：本文公开的发光器件包括具有多个锥体的图案化衬底，其中在两个相邻锥体之间的空间。形成在锥体上的发光叠层。此外，锥体包括锥体的顶部区域和锥体的底部区域的面积比小于0.0064。

9. 发明授权

US08304787B2 Light-emitting device and the manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08304787B2
公开(公告)日：2012-11-06
申请号：US12795169
申请日：2010-06-07
申请人： Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
发明人： Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
IPC分类号： H01L27/15
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
摘要翻译：一种具有发光外延结构的发光器件。发光外延结构具有不小于50伏的临界反向电压的模数，而发光外延结构在-10μA/ mm 2的电流密度下被反向偏置，并且具有不小于 50发光/瓦，而发光外延结构以150mA / mm2的电流密度正向偏置。

10. 发明申请

US20100308348A1 LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100308348A1
公开(公告)日：2010-12-09
申请号：US12795169
申请日：2010-06-07
申请人： Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
发明人： Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
IPC分类号： H01L27/15
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The disclosure provides a light-emitting device comprising a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm2, and has a luminous efficiency not less than 50 lumen/Watt while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2. Another aspect of the present disclosure provides a manufacturing method for a light-emitting device. The method comprises the steps of providing a substrate, growing a first epitaxial layer on the substrate with a first growth condition, growing a process-transition layer on the first epitaxial layer with a second growth condition, and growing a second epitaxial layer on the process-transition layer with a third growth condition, wherein a process change exists in the first growth condition and the third growth condition, and wherein the electrical conductivity of the process-transition layer is greater than that of the first epitaxial layer and/or the second epitaxial layer.
摘要翻译：本公开提供了包括发光外延结构的发光器件。发光外延结构具有不小于50伏的临界反向电压的模数，而发光外延结构在-10μA/ mm 2的电流密度下被反向偏置，并且具有不小于50的发光效率发光外延结构以150mA / mm 2的电流密度正向偏置。本公开的另一方面提供了一种用于发光装置的制造方法。该方法包括以下步骤：提供衬底，在第一生长条件下在衬底上生长第一外延层，在第二生长条件下在第一外延层上生长工艺过渡层，以及在工艺上生长第二外延层 - 过渡层，其中在第一生长条件和第三生长条件下存在过程变化，并且其中过程转变层的电导率大于第一外延层和/或第二生长条件的电导率外延层。

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