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1. 发明授权

US08927386B2 Method for manufacturing deep-trench super PN junctions 有权
标题翻译：深沟超PN结的制造方法
公开(公告)号：US08927386B2
公开(公告)日：2015-01-06
申请号：US13878453
申请日：2012-05-31
申请人： Tzong Shiann Wu , Genyi Wang , Leibing Yuan , Pengpeng Wu
发明人： Tzong Shiann Wu , Genyi Wang , Leibing Yuan , Pengpeng Wu
IPC分类号： H01L21/04 , H01L21/761 , H01L29/66 , H01L29/06 , H01L21/3065
CPC分类号： H01L29/66136 , H01L21/3065 , H01L29/0619 , H01L29/0634
摘要： The present invention provides a method for manufacturing a deep-trench super PN junction. The method includes: a deposition step for forming an epitaxial layer on a substrate; forming a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer; forming deep trenches in the epitaxial layer; completely filling the deep trenches with an epitaxial material and the epitaxial material is beyond the second dielectric layer; filling the entire surface of the second dielectric layer and the epitaxial layer such as Si using a third dielectric to from a surface filling layer with a predetermined height; etching back on the surface filling layer to the interface of the first dielectric layer and the epitaxial layer; and a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize Si epitaxial material.
摘要翻译：本发明提供一种用于制造深沟槽超PN结的方法。该方法包括：沉积步骤，用于在衬底上形成外延层; 在外延层上依次形成第一电介质层和第二电介质层; 在外延层中形成深沟槽; 用外延材料完全填充深沟槽，并且外延材料超出第二介电层; 使用第三电介质填充第二电介质层的整个表面和诸如Si的外延层从具有预定高度的表面填充层填充; 在表面填充层上回蚀刻到第一介电层和外延层的界面; 以及去除第一电介质层，第二电介质层和表面填充层以平坦化Si外延材料的去除步骤。

2. 发明申请

US20130196489A1 METHOD FOR MANUFACTURING DEEP-TRENCH SUPER PN JUNCTIONS 有权
标题翻译：用于制造深层超级PN结的方法
公开(公告)号：US20130196489A1
公开(公告)日：2013-08-01
申请号：US13878453
申请日：2012-05-31
申请人： Tzong Shiann Wu , Genyi Wang , Leibing Yuan , Pengpeng Wu
发明人： Tzong Shiann Wu , Genyi Wang , Leibing Yuan , Pengpeng Wu
IPC分类号： H01L29/66
CPC分类号： H01L29/66136 , H01L21/3065 , H01L29/0619 , H01L29/0634
摘要： The present invention provides a method for manufacturing a deep-trench super PN junction. The method includes: a deposition step for forming an epitaxial layer on a substrate; forming a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer; forming deep trenches in the epitaxial layer; completely filling the deep trenches with an epitaxial material and the epitaxial material is beyond the second dielectric layer; filling the entire surface of the second dielectric layer and the epitaxial layer such as Si using a third dielectric to from a surface filling layer with a predetermined height; etching back on the surface filling layer to the interface of the first dielectric layer and the epitaxial layer; and a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize Si epitaxial material.
摘要翻译：本发明提供一种用于制造深沟槽超PN结的方法。该方法包括：沉积步骤，用于在衬底上形成外延层; 在外延层上依次形成第一电介质层和第二电介质层; 在外延层中形成深沟槽; 用外延材料完全填充深沟槽，并且外延材料超出第二介电层; 使用第三电介质填充第二电介质层的整个表面和诸如Si的外延层从具有预定高度的表面填充层填充; 在表面填充层上回蚀刻到第一介电层和外延层的界面; 以及去除第一电介质层，第二电介质层和表面填充层以平坦化Si外延材料的去除步骤。

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