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    • 6. 发明申请
    • TORSION BLADE PIVOT WINDMILL
    • US20110020133A1
    • 2011-01-27
    • US12897048
    • 2010-10-04
    • James W. Miller
    • James W. Miller
    • F03D1/00
    • F03D1/0658F03D1/0608F05B2240/30Y02E10/721Y02E10/726
    • A pair of airfoil blades having a longitudinal axis coincident with one another. Each blade is bent at the center on the plane of the chord. Each blade has an airfoil tip blade placed at the outer most trailing edge. The blades are affixed by their root ends to opposite ends of a torsion shaft. The blade chords are offset from one another, which defines a blade pitch angle. The torsion shaft is journaled perpendicular through a driveshaft, whereas the rotation of the blades can transfer through the torsion shaft to the driveshaft and cause the driveshaft to turn, eliminating the need for a hub. The blades are adapted to pivot along with the torsion shaft. The blades lie in substantially the same plane, and are adapted for rotation in a plane orthogonal to the longitudinal axis of the driveshaft. Each blade has an airfoil shaped fluid gate valve disposed on the leading edge.
    • 一对具有彼此重合的纵轴的翼型叶片。 每个叶片在和弦平面上的中心弯曲。 每个叶片具有放置在最外侧最后缘的翼型末端叶片。 叶片的根端固定在扭转轴的相对端。 叶片和弦彼此偏移,这限定了叶片桨距角。 扭转轴通过驱动轴垂直地轴向旋转,而叶片的旋转可以通过扭转轴传递到驱动轴,并使驱动轴转动,从而无需轮毂。 叶片适于与扭转轴一起枢转。 叶片位于基本上相同的平面中,并且适于在与驱动轴的纵向轴线正交的平面中旋转。 每个叶片具有设置在前缘上的翼型流体闸阀。
    • 7. 发明授权
    • MIGFET circuit with ESD protection
    • MIGFET电路具有ESD保护
    • US07817387B2
    • 2010-10-19
    • US11971591
    • 2008-01-09
    • Michael G. KhazhinskyLeo MathewJames W. Miller
    • Michael G. KhazhinskyLeo MathewJames W. Miller
    • H02H9/00H01L23/62
    • H01L27/0285H01L2924/0002H01L2924/00
    • An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.
    • 静电放电(ESD)保护电路耦合到电源电压轨,并包括多个独立的栅极场效应晶体管(MIGFET),预驱动器和热门偏置电路。 MIGFET具有耦合在输出焊盘和电源电压轨之间的源/漏路径,并且具有第一栅极端子和第二栅极端子。 预驱动电路有一个输出。 热门偏置电路耦合到MIGFET的第一栅极端子,并且预驱动器电路的输出耦合到MIGFET的第二栅极端子。 热门偏置电路被配置为在ESD事件期间向MIGFET的第一栅极端施加偏置电压,这增加了MIGFET的击穿电压,以便更好地承受ESD事件。
    • 9. 发明授权
    • Electrostatic discharge (ESD) protection circuit for multiple power domain integrated circuit
    • 多功率集成电路的静电放电(ESD)保护电路
    • US07593202B2
    • 2009-09-22
    • US11264557
    • 2005-11-01
    • Michael G. KhazhinskyMartin J. BayerJames W. MillerBryan D. Preble
    • Michael G. KhazhinskyMartin J. BayerJames W. MillerBryan D. Preble
    • H02H9/00
    • H02H9/046H01L2924/0002H01L2924/00
    • An integrated circuit (300/400) includes first and second power domains and a bank of input/output (I/O) cells (305/405) coupled to the first and second power domains. The bank of I/O cells (305/405) includes a first plurality of active clamps (374/445) for the first power domain and a second plurality of active clamps (384/425) for the second power domain wherein the first (374/445) and second (384/425) pluralities of active clamps overlap along the bank of I/O cells. According to one aspect each of the plurality of input/output cells (420, 440) has a bonding pad (421, 441) for receiving an output signal referenced to a respective first power domain, and at least one ESD protection element (425, 445) for a respective second power domain. According to another aspect, each of the plurality of input/output cells (420, 440) has a bonding pad (421, 441) for receiving a respective output signal and at least one ESD protection element for each of a first power domain and a second power domain.
    • 集成电路(300/400)包括耦合到第一和第二电源域的第一和第二电源域和一组输入/输出(I / O)单元(305/405)。 I / O单元组(305/405)包括用于第一功率域的第一多个有源钳位(374/445)和用于第二功率域的第二多个有源钳位(384/425),其中第一( 374/445)和第二(384/425)个多个有源钳位沿I / O单元组重叠。 根据一个方面,多个输入/输出单元(420,440)中的每一个具有用于接收参考相应的第一功率域的输出信号的接合焊盘(421,441)和至少一个ESD保护元件(425,440) 445)用于相应的第二功率域。 根据另一方面,多个输入/输出单元(420,440)中的每一个具有用于接收相应输出信号的接合焊盘(421,441)和用于第一功率域和第一功率域中的每一个的至少一个ESD保护元件 第二功率域。
    • 10. 发明申请
    • MIGFET CIRCUIT WITH ESD PROTECTION
    • 具有ESD保护功能的MIGFET电路
    • US20090174973A1
    • 2009-07-09
    • US11971591
    • 2008-01-09
    • Michael G. KhazhinskyLeo MathewJames W. Miller
    • Michael G. KhazhinskyLeo MathewJames W. Miller
    • H02H9/04
    • H01L27/0285H01L2924/0002H01L2924/00
    • An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.
    • 静电放电(ESD)保护电路耦合到电源电压轨,并包括多个独立的栅极场效应晶体管(MIGFET),预驱动器和热门偏置电路。 MIGFET具有耦合在输出焊盘和电源电压轨之间的源/漏路径,并且具有第一栅极端子和第二栅极端子。 预驱动电路有一个输出。 热门偏置电路耦合到MIGFET的第一栅极端子,并且预驱动器电路的输出耦合到MIGFET的第二栅极端子。 热门偏置电路被配置为在ESD事件期间向MIGFET的第一栅极端施加偏置电压,这增加了MIGFET的击穿电压,以便更好地承受ESD事件。