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1. 发明授权

US08877422B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/26 , G03F7/09
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种更多种由下列通式（2）表示的化合物和/或其等价物。可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性，抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。

2. 发明授权

US08663898B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08663898B2
公开(公告)日：2014-03-04
申请号：US13311137
申请日：2011-12-05
申请人： Tsutomu Ogihara , Takeru Watanabe , Yusuke Biyajima , Daisuke Kori , Takeshi Kinsho , Toshihiko Fujii
发明人： Tsutomu Ogihara , Takeru Watanabe , Yusuke Biyajima , Daisuke Kori , Takeshi Kinsho , Toshihiko Fujii
IPC分类号： G03F7/00 , G03F7/11 , G03F7/26 , G03F7/40
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物，特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

3. 发明授权

US08592956B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08592956B2
公开(公告)日：2013-11-26
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： G03F7/11 , G03F7/091 , G03F7/095
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和一种或多种由以下通式（2）表示的化合物和/或其等同体。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。

4. 发明授权

US08853031B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08853031B2
公开(公告)日：2014-10-07
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L21/336 , C08G10/02 , G03F7/09
CPC分类号： C08G10/02 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物，特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

5. 发明授权

US08603732B2 Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权
标题翻译：抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺
公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/09 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译：公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。

6. 发明授权

US08835092B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权
标题翻译：抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物
公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/095 , G03F7/11 , G03F7/40 , G03F7/09 , C07C69/753 , C08L61/06
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

7. 发明申请

US20110195362A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE 有权
标题翻译：抗静电膜组合物，形成电阻膜的方法，方法和全氟烷烃衍生物
公开(公告)号：US20110195362A1
公开(公告)日：2011-08-11
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/20 , C07C69/753 , C09D7/12 , C08L61/02 , B05D3/02 , B05D7/24 , B82Y20/00
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

8. 发明授权

US09076738B2 Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative 有权
标题翻译：用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物
公开(公告)号：US09076738B2
公开(公告)日：2015-07-07
申请号：US13183175
申请日：2011-07-14
申请人： Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho , Tsutomu Ogihara
发明人： Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho , Tsutomu Ogihara
IPC分类号： H01L21/311 , C07C69/753 , G03F7/11 , H01L21/027
CPC分类号： H01L21/31144 , C07C69/753 , C07C2604/00 , G03F7/11 , H01L21/0271 , H01L21/31116
摘要： The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
摘要翻译：本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。

9. 发明申请

US20100099044A1 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film 有权
标题翻译：形成抗蚀剂下层膜的方法，使用该方法的图案化方法以及抗蚀剂下层膜的组合物
公开(公告)号：US20100099044A1
公开(公告)日：2010-04-22
申请号：US12585387
申请日：2009-09-14
申请人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
发明人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/095
摘要： There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
摘要翻译：公开了一种形成多层抗蚀剂膜的抗蚀剂下层膜的方法，所述多层抗蚀剂膜具有至少三层，其至少包括：涂布含有下述通式（1）表示的酚醛清漆树脂的抗蚀剂下层膜用组合物的工序，所述酚醛清漆树脂通过在基材上处理具有双萘酚基的化合物而得到; 以及通过在高于300℃和600℃或更低的温度下热处理10至600秒来固化抗蚀剂下层膜的涂覆组合物的步骤。可以提供一种形成抗蚀剂下层膜的方法，并且使用在具有至少三层的平版印刷用的多层抗蚀剂膜中形成抗蚀剂下层膜的方法的图案化工艺，得到具有降低的反射率的抗蚀剂下层膜，耐腐蚀性高，耐热和耐溶剂性高，特别是在基板蚀刻期间无晃动。

10. 发明授权

US08450048B2 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film 有权
标题翻译：形成抗蚀剂下层膜的方法，使用该方法的图案化方法以及抗蚀剂下层膜的组合物
公开(公告)号：US08450048B2
公开(公告)日：2013-05-28
申请号：US12585387
申请日：2009-09-14
申请人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
发明人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/091 , G03F7/095
摘要： There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
摘要翻译：公开了一种形成多层抗蚀剂膜的抗蚀剂下层膜的方法，所述多层抗蚀剂膜具有至少三层，其至少包括：涂布含有下述通式（1）表示的酚醛清漆树脂的抗蚀剂下层膜用组合物的工序，所述酚醛清漆树脂通过在基材上处理具有双萘酚基的化合物而得到; 以及通过在高于300℃和600℃或更低的温度下热处理10至600秒来固化抗蚀剂下层膜的涂覆组合物的步骤。可以提供一种形成抗蚀剂下层膜的方法，并且使用在具有至少三层的平版印刷用的多层抗蚀剂膜中形成抗蚀剂下层膜的方法的图案化工艺，得到具有降低的反射率的抗蚀剂下层膜，耐腐蚀性高，耐热和耐溶剂性高，特别是在基板蚀刻期间无晃动。

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