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1. 发明申请

US20050109388A1 Photovoltaic device and manufacturing method thereof 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20050109388A1
公开(公告)日：2005-05-26
申请号：US10971130
申请日：2004-10-25
申请人： Tsutomu Murakami , Shoji Nishida
发明人： Tsutomu Murakami , Shoji Nishida
IPC分类号： H01L31/04 , H01L31/00 , H01L31/0236 , H01L31/0368 , H01L31/075 , H01L31/077 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/03682 , H01L31/077 , H01L31/182 , Y02B10/12 , Y02E10/546 , Y02P70/521
摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.
摘要翻译：提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

2. 发明申请

US20080271783A1 PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20080271783A1
公开(公告)日：2008-11-06
申请号：US12169597
申请日：2008-07-08
申请人： Tsutomu Murakami , Shoji Nishida
发明人： Tsutomu Murakami , Shoji Nishida
IPC分类号： H01L31/00
CPC分类号： H01L31/02363 , H01L31/03682 , H01L31/077 , H01L31/182 , Y02B10/12 , Y02E10/546 , Y02P70/521
摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.
摘要翻译：提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

3. 发明授权

US08733319B2 Electronic governor system and control device of the same 有权
标题翻译：电子调速器系统和控制装置相同
公开(公告)号：US08733319B2
公开(公告)日：2014-05-27
申请号：US13064958
申请日：2011-04-28
申请人： Buso Takigawa , Umerujan Sawut , Tohti Gheyret , Norichika Kojima , Tsutomu Murakami
发明人： Buso Takigawa , Umerujan Sawut , Tohti Gheyret , Norichika Kojima , Tsutomu Murakami
IPC分类号： F02D41/00
CPC分类号： F02D11/106 , F02D11/107 , F02D31/002
摘要： When control to maintain a constant engine rotation number is executed, the electronic control unit constantly monitors an error of detected throttle position data with respect to a desired throttle control value, executes a first stage of a failure judgment method to judge that a failure of a throttle control system has occurred in a case where an absolute value of the error exceeds a predetermined threshold value continuously for a predetermined time or longer, and executes a second stage of the failure judgment method to judge that a serious failure has occurred in the system in a case where a detected engine rotation number exceeds a predetermined rotation number continuously for a predetermined time or longer, to perform predetermined operations in accordance with the judgment results.
摘要翻译：当执行维持恒定的发动机转速的控制时，电子控制单元根据期望的节气门控制值持续地监视检测到的节气门位置数据的误差，执行故障判断方法的第一阶段，在错误的绝对值连续超过预定时间或更长时间的情况下已经发生节气门控制系统，并且执行故障判断方法的第二阶段，以判断系统中发生严重故障检测到的发动机转速连续超过预定转数的预定时间或更长时间的情况下，根据判断结果进行规定的动作。

4. 发明授权

US07691241B2 Electrolytic etching method and apparatus 失效
标题翻译：电解蚀刻方法和装置
公开(公告)号：US07691241B2
公开(公告)日：2010-04-06
申请号：US10998617
申请日：2004-11-30
申请人： Tsutomu Murakami , Koji Tsuzuki
发明人： Tsutomu Murakami , Koji Tsuzuki
IPC分类号： C25F3/14 , C25F7/00
CPC分类号： B23H3/00 , B23H3/04 , C25F3/14 , C25F7/00 , H01L31/18
摘要： The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.
摘要翻译：本发明涉及一种使用电解反应进行局部蚀刻或图案蚀刻的方法和装置，其中传统上存在由于关于对准精度的装置问题而在细胞边缘上不能精细地形成蚀刻线的问题。本发明提供了可以进行细线蚀刻并且可以在单元边缘上形成线的方法和装置。本发明提供一种基板的电解蚀刻方法，该方法形成在表面上具有被摄体蚀刻层，具有从基板端面提供固定间隙的步骤，该基板端面位于基板的端面外部，用于放置工作部分的工作电极，并在基板和工作电极之间通过电流。

5. 发明申请

US20080276908A1 Throttle apparatus having electronic control means built-in 审中-公开
标题翻译：具有内置电子控制装置的节气门装置
公开(公告)号：US20080276908A1
公开(公告)日：2008-11-13
申请号：US12000367
申请日：2007-12-12
申请人： Tsutomu Murakami
发明人： Tsutomu Murakami
IPC分类号： F02D41/00
CPC分类号： F02D11/10 , F02D35/0053 , F02D2200/0406 , F02D2200/0414 , F02D2400/06
摘要： The present invention provides a throttle apparatus having an electronic control means built-in which uses an engine fuel supply system having a carburetor specification and is arranged for constructing a fuel injection system in accordance with an electronic control.
摘要翻译：本发明提供一种节气门装置，其具有内置的电子控制装置，其使用具有化油器规格的发动机燃料供应系统，并且被布置用于根据电子控制构造燃料喷射系统。

6. 发明授权

US07287514B2 Fuel supply control method and apparatus of internal combustion engine 失效
标题翻译：燃油供应控制方法和内燃机装置
公开(公告)号：US07287514B2
公开(公告)日：2007-10-30
申请号：US11305194
申请日：2005-12-19
申请人： Masao Kakinuma , Tsutomu Murakami
发明人： Masao Kakinuma , Tsutomu Murakami
IPC分类号： F02M51/00 , F02D41/10 , F02M69/28
CPC分类号： F02D41/107
摘要： The invention provides a fuel supply control method and apparatus in which an air fuel ratio does not become rich even if an acceleration and deceleration operation is repeated for a short time in the case that a time lag with respect to a response from a detection of an acceleration state to a fuel amount increase is large, and troubles such as a black smoke generation from an exhaust pipe, an engine stop and the like are not generated. In a fuel supply control method of an internal combustion chamber for increasing an amount of a fuel for acceleration so as to inject from an injection apparatus, at a time of detecting a transient state at an accelerating time or the like on the basis of data such as an opening degree of a throttle valve and/or an air suction pressure, the method inhibits the fuel amount increase for acceleration on the basis of the detection of the transient state, if a total amount of an injection fuel per a unit time is more than a fixed value.
摘要翻译：本发明提供一种燃料供给控制方法和装置，其中即使在相对于来自检测到的检测的响应的时间滞后的情况下，即使在短时间内重复加减速操作，空燃比也不变浓燃料量增加的加速状态大，并且不产生诸如从排气管，发动机停止等产生的黑烟等问题。在用于增加用于加速的燃料量以便从注射装置注入的内燃机的燃料供应控制方法中，在基于加速时间等检测瞬态的时候，作为节流阀的开度和/或空气吸入压力，如果每单位时间的喷射燃料的总量多，则该方法基于过渡状态的检测来抑制加速燃料量的增加比固定值。

7. 发明授权

US06180868B2 Solar cell module, solar cell module string, solar cell system, and method for supervising said solar cell module or solar cell module string 有权
标题翻译：太阳能电池模块，太阳能电池组件串，太阳能电池系统以及太阳能电池组件或太阳能电池模块串的监视方法
公开(公告)号：US06180868B2
公开(公告)日：2001-01-30
申请号：US09332104
申请日：1999-06-14
申请人： Takehito Yoshino , Tsutomu Murakami , Koji Tsuzuki , Yoshifumi Takeyama , Koichi Shimizu
发明人： Takehito Yoshino , Tsutomu Murakami , Koji Tsuzuki , Yoshifumi Takeyama , Koichi Shimizu
IPC分类号： H01L2500
CPC分类号： H01L31/056 , H01L31/02 , H01L31/0392 , H01L31/048 , H01L31/049 , H02S20/23 , H02S50/00 , Y02B10/12 , Y02E10/52
摘要： A solar cell module or a solar cell module which is provided with a readable and writable memory medium capable of writing in a large quantity of information of said solar cell module and capable of reading out necessary information from said memory medium. A solar cell system comprising said solar cell module or said solar cell module string. A method for supervising said solar cell module or said solar cell module string.
摘要翻译：一种太阳能电池模块或太阳能电池模块，其具有能够写入所述太阳能电池模块的大量信息并且能够从所述存储介质读出必要信息的可读写的存储介质。一种太阳能电池系统，包括所述太阳能电池模块或所述太阳能电池组件串。一种用于监视所述太阳能电池模块或所述太阳能电池模块串的方法。

8. 发明授权

US6132585A Semiconductor element and method and apparatus for fabricating the same 失效
标题翻译：半导体元件及其制造方法和装置
公开(公告)号：US6132585A
公开(公告)日：2000-10-17
申请号：US749727
申请日：1996-11-15
申请人： Takafumi Midorikawa , Tsutomu Murakami , Takahiro Mori , Hirofumi Ichinose
发明人： Takafumi Midorikawa , Tsutomu Murakami , Takahiro Mori , Hirofumi Ichinose
IPC分类号： H01L31/04 , H01L31/20 , C25D5/02
CPC分类号： H01L31/208 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： The present invention aims to provide a highly reliable semiconductor element with high performance, and a fabrication method for such highly reliable semiconductor with excellent mass producibility. The photovoltaic elements comprise an electric conductor, semiconductor regions and a transparent conductor layer, which are sequentially formed on a substrate. The shunt resistance in the semiconductor element is rendered in the range from 1.times.10.sup.3 .OMEGA.cm.sup.2 to 1.times.10.sup.6 .OMEGA.cm.sup.2 by performing a forming treatment and a short circuit passivation treatment after forming the transparent conductor layer, and then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, or performing a forming treatment, after forming the semiconductor layers, then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, and then forming the transparent conductor layer.
摘要翻译：本发明旨在提供一种具有高性能的高可靠性半导体元件，以及具有优异的大规模生产能力的这种高可靠性半导体的制造方法。光电元件包括依次形成在基板上的电导体，半导体区域和透明导体层。通过在形成透明导体层之后进行成形处理和短路钝化处理，半导体元件中的分流电阻在1×10 3欧姆·cm2至1×10 6欧姆·平方厘米的范围内，然后用阳离子选择性地覆盖缺陷部分或阴离子电沉积树脂，或者在形成半导体层之后进行成形处理，然后用阳离子或阴离子电沉积树脂绝缘地选择性地覆盖缺陷部分，然后形成透明导体层。

9. 发明授权

US5993637A Electrode structure, electrolytic etching process and apparatus 失效
标题翻译：电极结构，电解蚀刻工艺和设备
公开(公告)号：US5993637A
公开(公告)日：1999-11-30
申请号：US984046
申请日：1997-12-03
申请人： Masaya Hisamatsu , Akio Hasebe , Tsutomu Murakami , Hirofumi Ichinose , Satoshi Shinkura , Yukie Ueno
发明人： Masaya Hisamatsu , Akio Hasebe , Tsutomu Murakami , Hirofumi Ichinose , Satoshi Shinkura , Yukie Ueno
IPC分类号： C25F3/14 , C25F3/12 , C25F7/00 , H01L31/04 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , C25F3/12 , C25F7/00 , H01L31/1884 , Y02E10/548
摘要： An electrode structure is constituted by a first electrode, and at least one second electrode providing a pair of opposite portions with a prescribed spacing therebetween at which the first electrode is disposed. The electrode structure is suitably used for electrolytic etching and is effective in providing an accurate etching pattern without damaging the surface of an etching object.
摘要翻译：电极结构由第一电极和至少一个第二电极构成，所述至少一个第二电极提供一对相对的部分，其间设置有第一电极。电极结构适合用于电解蚀刻，并且在提供精确的蚀刻图案而不损坏蚀刻对象的表面的情况下是有效的。

10. 发明授权

US5324364A Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content 失效
标题翻译：具有具有Ge含量最大点的i型a-SiGe半导体层的pin结光电器件
公开(公告)号：US5324364A
公开(公告)日：1994-06-28
申请号：US45176
申请日：1993-04-13
申请人： Koichi Matsuda , Masafumi Sano , Tsutomu Murakami
发明人： Koichi Matsuda , Masafumi Sano , Tsutomu Murakami
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03765 , H01L31/065 , H01L31/075 , Y02E10/548
摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.
摘要翻译：一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a）基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

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