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1. 发明授权

US5028488A Functional ZnSe.sub.1-x Te.sub.x :H deposited film 失效
标题翻译：功能ZnSe1-xTex：H沉积膜
公开(公告)号：US5028488A
公开(公告)日：1991-07-02
申请号：US226819
申请日：1988-08-01
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
IPC分类号： C30B33/00 , C30B29/22 , C30B29/30 , C30B33/02 , G02F1/03 , G02F1/05 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1832 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02966 , H01L31/0392 , H01L31/068 , Y02E10/547 , Y10T428/31678
摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.
摘要翻译：功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例每单位体积的畴数在65至85体积％范围内。还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。这些膜适用于制备诸如光电元件的高功能器件。

2. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

3. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

4. 发明授权

US5038713A Microwave plasma treating apparatus 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US5038713A
公开(公告)日：1991-08-13
申请号：US354856
申请日：1989-05-22
申请人： Soichiro Kawakami , Masahiro Kanai , Takayoshi Arai , Tsutomu Murakami
发明人： Soichiro Kawakami , Masahiro Kanai , Takayoshi Arai , Tsutomu Murakami
IPC分类号： B01J19/08 , C23C16/27 , C23C16/50 , C23C16/511 , C23F4/00 , C30B29/04 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32357 , H05H1/46
摘要： A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outside of the cavity resonator to prepare a region of a great magnetic flux density in the discharging space at the inside of the cavity resonator.

5. 发明授权

US4908330A Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积法形成含有IV族原子或硅原子和IV族原子的功能沉积膜的工艺
公开(公告)号：US4908330A
公开(公告)日：1990-03-13
申请号：US302245
申请日：1989-01-27
申请人： Takayoshi Arai , Masahiro Kanai , Soichiro Kawakami , Tsutomu Murakami
发明人： Takayoshi Arai , Masahiro Kanai , Soichiro Kawakami , Tsutomu Murakami
IPC分类号： C23C16/452 , C23C16/511 , C23C16/52
CPC分类号： C23C16/511 , C23C16/452 , C23C16/52
摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

6. 发明授权

US4898118A Apparatus for forming functional deposited film by microwave plasma CVD process 失效
标题翻译：用微波等离子体CVD法形成功能沉积膜的装置
公开(公告)号：US4898118A
公开(公告)日：1990-02-06
申请号：US252525
申请日：1988-10-03
申请人： Tsutomu Murakami , Masahiro Kanai
发明人： Tsutomu Murakami , Masahiro Kanai
IPC分类号： C23C16/50 , C23C16/511 , H01J37/32
CPC分类号： H01J37/32357 , C23C16/511
摘要： Disclosed herein is an apparatus for forming a deposited film by a microwave plasma CVD process comprising introducing a film-forming raw material gas into a reaction vessel capable of being vacuum sealed, and generating a microwave-excited plasma in the reaction vessel to deposit a film on a substrate for film deposition disposed in the reaction vessel. The apparatus comprises a rectangular waveguide for transmitting microwave energy, a pair of microwave cutoff cavities having different cutoff frequencies, the cavities being oppositely disposed on opposite sides of the waveguide, and a reaction vessel disposed to penetrate through the waveguide and the microwave cutoff cavities, wherein a raw material gas inlet is provided at one end of the reaction vessel, and a film deposition space is provided at the other end of the reaction vessel, whereby it is possible to use effectively the plasma generated in the reaction vessel for film deposition without leakage of the plasma into the cavity on the gas inlet side, and to perform stable film deposition with good reproducibility.
摘要翻译：本文公开了一种通过微波等离子体CVD法形成沉积膜的装置，包括将成膜原料气体引入能够被真空密封的反应容器中，并在反应容器中产生微波激发等离子体以沉积膜在设置在反应容器中的用于膜沉积的基板上。该装置包括用于传输微波能量的矩形波导，具有不同截止频率的一对微波截止腔，空腔相对地设置在波导的相对侧上，反应容器设置成穿过波导和微波截止腔，其中原料气体入口设置在反应容器的一端，并且在反应容器的另一端设置有膜沉积空间，由此可以有效地利用在反应容器中产生的用于膜沉积的等离子体而不用将等离子体泄漏到气体入口侧的空腔中，并以良好的再现性进行稳定的膜沉积。

7. 发明授权

US4908329A Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积工艺形成含有II和VI族原子的功能沉积膜的方法
公开(公告)号：US4908329A
公开(公告)日：1990-03-13
申请号：US302243
申请日：1989-01-27
申请人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
发明人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
IPC分类号： C23C16/50 , C23C16/30 , C23C16/452 , C23C16/511 , C30B25/10 , H01L21/365
CPC分类号： C30B25/105 , C23C16/306 , C23C16/452 , C30B29/48 , H01L21/02422 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/0262 , Y10S148/045 , Y10S148/064
摘要： A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.

8. 发明授权

US4998503A Apparatus for forming functional deposited film by microwave plasma CVD process 失效
标题翻译：用微波等离子体CVD法形成功能沉积膜的装置
公开(公告)号：US4998503A
公开(公告)日：1991-03-12
申请号：US430246
申请日：1989-11-02
申请人： Tsutomu Murakami , Masahiro Kanai
发明人： Tsutomu Murakami , Masahiro Kanai
IPC分类号： C23C16/50 , C23C16/511 , H01J37/32
CPC分类号： H01J37/32357 , C23C16/511
摘要： Disclosed herein is an apparatus for forming a deposited film by a microwave plasma CVD process comprising introducing a film-forming raw material gas into a reaction vessel capable of being vacuum sealed, and generating a microwave-excited plasma in the reaction vessel to deposit a film on a substrate for film deposition disposed in the reaction vessel. The apparatus comprises a waveguide for transmitting microwave energy, a pair of microwave cutoff cavities having different cutoff frequencies, the cavities being oppositely disposed on opposite sides of the waveguide, and a reaction vessel disposed to penetrate through the waveguide and the microwave cutoff cavities, wherein a raw material gas inlet is provided at one end of the reaction vessel, and a film deposition space is provided at the other end of the reaction vessel, whereby it is possible to use effectively the plasma generated in the reaction vessel for film deposition without leakage of the plasma into the cavity on the gas inlet side, and to perform stable film deposition with good reproducibility.

9. 发明授权

US4888062A Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有I型半导体层的pin结光电元件包含至少含有1至4原子％的Zn，Se和H的非单晶材料，
公开(公告)号：US4888062A
公开(公告)日：1989-12-19
申请号：US236792
申请日：1988-08-26
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L31/0296 , H01L31/077 , H01L31/18
CPC分类号： H01L31/077 , H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/1828 , Y02E10/543
摘要： An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe.sub.1-x Te.sub.x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7.The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.

10. 发明申请

US20130028825A1 MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT 审中-公开
标题翻译：多晶硅和多晶硅的制造方法
公开(公告)号：US20130028825A1
公开(公告)日：2013-01-31
申请号：US13636490
申请日：2011-03-25
申请人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
发明人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
IPC分类号： C03B5/23 , C01B33/02
CPC分类号： C01B33/02 , C01B33/037 , C30B11/006 , C30B28/06 , C30B29/06 , C30B35/002
摘要： A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X
摘要翻译：一种多晶硅锭的制造方法，其特征在于，包括：从所述硅熔体的底面单向上固化保持在坩埚中的硅熔体，其中，在侧壁的内表面和坩埚的底部，坩埚中的凝固过程被高分割成从0到X（10mm和nlE; X <30mm）的第一区域，从X到Y的第二区域（30mm＆amp; NlE; Y <100mm），Y以上的第三区域以坩埚的底部为基准，第一区域的固化率V1为10mm / h×nlE; V1＆lt; ll; 20mm / h，凝固率第二区域中的V2在1mm / h＆lt; lEE; V2＆nlE; 5mm / h的范围内。

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