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1. 发明授权

US08008147B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08008147B2
公开(公告)日：2011-08-30
申请号：US12320278
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译：可以尽可能地防止器件特性的劣化。半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。

2. 发明授权

US07834408B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07834408B2
公开(公告)日：2010-11-16
申请号：US12320279
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/76
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译：可以尽可能地防止器件特性的劣化。半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。

3. 发明授权

US07075158B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07075158B2
公开(公告)日：2006-07-11
申请号：US11244295
申请日：2005-10-06
申请人： Masato Koyama , Akira Nishiyama , Masamichi Suzuki , Yuuichi Kamimuta , Tsunehiro Ino
发明人： Masato Koyama , Akira Nishiyama , Masamichi Suzuki , Yuuichi Kamimuta , Tsunehiro Ino
IPC分类号： H01L29/76
CPC分类号： H01L21/823814 , H01L21/28097 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
摘要翻译：可以制造具有低电阻的半导体器件，其器件特性不变化。半导体器件包括硅层，形成在硅层上的栅极电介质膜，形成在栅极电介质膜上的栅电极，并且包括部分结晶的氮化金属硅化物层，以及形成在栅电极两侧的硅层。

4. 发明申请

US20050142769A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050142769A1
公开(公告)日：2005-06-30
申请号：US11011044
申请日：2004-12-15
申请人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
发明人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
IPC分类号： H01L21/20 , H01L21/28 , H01L21/283 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L21/336 , H01L21/469 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/513
摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.
摘要翻译：公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

5. 发明授权

US08390054B2 Semiconductor memory element and semiconductor memory device 有权
标题翻译：半导体存储元件和半导体存储器件
公开(公告)号：US08390054B2
公开(公告)日：2013-03-05
申请号：US12880748
申请日：2010-09-13
申请人： Tsunehiro Ino , Daisuke Matsushita , Yasushi Nakasaki , Masao Shingu
发明人： Tsunehiro Ino , Daisuke Matsushita , Yasushi Nakasaki , Masao Shingu
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , B82Y10/00 , B82Y30/00 , H01L27/11578 , H01L27/11582 , H01L29/42348 , H01L29/7923 , H01L29/7926
摘要： According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO2 particles, a block insulator provided on the charge accumulation film, and a control electrode provided on the block insulator.
摘要翻译：根据一个实施例，半导体存储元件包括半导体层，设置在半导体层上的隧道绝缘体，设置在隧道绝缘体上的电荷累积膜，其膜厚度为0.9nm以上且2.8nm以下，电荷积累含有立方HfO 2颗粒的膜，设置在电荷累积膜上的块绝缘体，以及设置在块绝缘体上的控制电极。

6. 发明授权

US08012315B2 Lanthanoid aluminate film fabrication method 有权
标题翻译：镧系铝酸盐薄膜的制造方法
公开(公告)号：US08012315B2
公开(公告)日：2011-09-06
申请号：US11966304
申请日：2007-12-28
申请人： Tsunehiro Ino , Akira Takashima
发明人： Tsunehiro Ino , Akira Takashima
IPC分类号： C23C14/35
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译：公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。然后，将基板输送并加载到真空室中。接下来，将选择的溅射气体引入该室。此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

7. 发明申请

US20090166767A1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US20090166767A1
公开(公告)日：2009-07-02
申请号：US12320279
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

8. 发明申请

US20090134480A1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US20090134480A1
公开(公告)日：2009-05-28
申请号：US12320278
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

9. 发明授权

US07348644B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348644B2
公开(公告)日：2008-03-25
申请号：US11407077
申请日：2006-04-20
申请人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
发明人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/517 , H01L29/518
摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要翻译：公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键，以及形成在绝缘膜上方的电极。

10. 发明授权

US08992744B2 Lanthanoid aluminate film fabrication method 有权
标题翻译：镧系铝酸盐薄膜的制造方法
公开(公告)号：US08992744B2
公开(公告)日：2015-03-31
申请号：US13192687
申请日：2011-07-28
申请人： Tsunehiro Ino , Akira Takashima
发明人： Tsunehiro Ino , Akira Takashima
IPC分类号： C23C14/34 , C23C14/08
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译：公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。然后，将基板输送并加载到真空室中。接下来，将选择的溅射气体引入该室。此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

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