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1. 发明授权

US06790730B2 Fabrication method for mask read only memory device 有权
标题翻译：掩模只读存储器件的制造方法
公开(公告)号：US06790730B2
公开(公告)日：2004-09-14
申请号：US10156325
申请日：2002-05-24
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： H01L21336
CPC分类号： H01L27/11253 , H01L21/26586 , H01L27/112
摘要： A fabrication method for a mask read only memory device is described. The method provides a substrate, and a doped conductive layer is formed on the substrate. After this, the doped conductive layer is patterned to form a plurality of bar-shaped doped conductive layers, followed by forming a dielectric layer on the substrate and on the bar-shaped conductive layers by thermal oxidation. A plurality of diffusion regions are concurrently formed under the bar-shaped conductive layers in the substrate. A patterned conductive layer is further formed on the dielectric layer.
摘要翻译：描述了一种用于掩模只读存储器件的制造方法。该方法提供衬底，并且在衬底上形成掺杂导电层。之后，将掺杂的导电层图案化以形成多个棒状掺杂导电层，随后通过热氧化在基板上和棒状导电层上形成电介质层。多个扩散区同时形成在基板中的棒状导电层的下方。在电介质层上进一步形成图案化的导电层。

2. 发明授权

US06706575B2 Method for fabricating a non-volatile memory 有权
标题翻译：制造非易失性存储器的方法
公开(公告)号：US06706575B2
公开(公告)日：2004-03-16
申请号：US10055265
申请日：2002-01-22
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/112 , H01L27/11253 , H01L27/115
摘要： A method for fabricating a non-volatile memory is described. A substrate having a strip stacked structure thereon is provided. A buried drain is then formed in the substrate beside the strip stacked structure and an insulating layer is formed on the buried drain. A silicon layer and a cap layer are sequentially formed over the substrate. The cap layer, the silicon layer and the strip stacked structure are then patterned successively in a direction perpendicular to the buried drain, wherein the strip stacked structure is patterned into a plurality of gates. A liner oxide layer is formed on the exposed surfaces of the gates, the substrate and the silicon layer. Thereafter, the cap layer is removed and a metal salicide layer is formed on the exposed surface of the silicon layer.
摘要翻译：描述了制造非易失性存储器的方法。提供其上具有条带堆叠结构的基板。然后在衬底旁边的衬底上形成掩埋漏极，并在掩埋漏极上形成绝缘层。在衬底上顺序形成硅层和覆盖层。然后，在垂直于埋地漏极的方向上连续地对盖层，硅层和条带堆叠结构进行图案化，其中条带层叠结构被图案化成多个栅极。衬底氧化物层形成在栅极，衬底和硅层的暴露表面上。此后，除去盖层，并在硅层的暴露表面上形成金属硅化物层。

3. 发明授权

US06919607B2 Structure of two-bit mask read-only memory device and fabricating method thereof 有权
标题翻译： 2位掩模只读存储器件的结构及其制造方法
公开(公告)号：US06919607B2
公开(公告)日：2005-07-19
申请号：US10142697
申请日：2002-05-08
申请人： Mu-Yi Liu , Kwang-Yang Chan , Yen-Hung Yeh , Tso-Hung Fan , Tao-Cheng Lu
发明人： Mu-Yi Liu , Kwang-Yang Chan , Yen-Hung Yeh , Tso-Hung Fan , Tao-Cheng Lu
IPC分类号： H01L21/8246 , H01L27/112 , H01L29/78
CPC分类号： H01L27/11253 , H01L27/112 , H01L27/11266
摘要： A structure of a 2-bit mask ROM device and a fabrication method thereof are provided. The memory structure includes a substrate, a gate structure, a 2-bit coding implantation region, a spacer, a buried drain region, an isolation structure and a word line. The gate structure is disposed on the substrate, while the coding implantation region is located in the substrate under the side of the gate structure. Further, at least one spacer is arranged beside the side of the gate structure and a buried drain region is disposed in the substrate beside the side of the spacer. Moreover, the buried drain region and the coding implantation region further comprise a buffer region in between. Additionally, an insulation structure is arranged on the substrate that is above the buried drain region, while the word lien is disposed on the gate structure.
摘要翻译：提供2位掩模ROM器件的结构及其制造方法。存储器结构包括衬底，栅极结构，2位编码注入区，间隔区，埋漏区，隔离结构和字线。栅极结构设置在衬底上，而编码注入区域位于栅极结构侧面的衬底中。此外，至少一个间隔物布置在栅极结构的侧面旁边，并且掩埋漏极区域设置在衬垫旁边的衬垫旁边。此外，掩埋漏极区域和编码注入区域还包括其间的缓冲区域。此外，绝缘结构布置在衬底上方，在掩埋漏极区域之上，而字留置被设置在栅极结构上。

4. 发明授权

US06649971B1 Nitride read-only memory cell for improving second-bit effect and method for making thereof 有权
标题翻译：用于改善第二位效应的氮化物只读存储单元及其制造方法
公开(公告)号：US06649971B1
公开(公告)日：2003-11-18
申请号：US10064905
申请日：2002-08-28
申请人： Yen-Hung Yeh , Wen-Jer Tsai , Mu-Yi Liu , Kwang-Yang Chan , Tso-Hung Fan , Tao-Cheng Lu
发明人： Yen-Hung Yeh , Wen-Jer Tsai , Mu-Yi Liu , Kwang-Yang Chan , Tso-Hung Fan , Tao-Cheng Lu
IPC分类号： H01L29788
CPC分类号： H01L29/7923
摘要： A NROM cell for reducing for reducing the second-bit effect is described. The NORM cell of the present invention is formed with a substrate, a silicon oxide/silicon nitride/silicon oxide (ONO) layer disposed on the substrate, a gate disposed on the silicon oxide/silicon nitride/silicon oxide layer, source/drain regions configured in the substrate beside the gate, and a shallow pocket doped region configured between the source/drain regions and the ONO layer beside the gate. The depth of the shallow pocket doped region is sufficiently small to prevent interference to the current flow that travels to the source/drain regions.
摘要翻译：描述了用于降低第二位效应的NROM单元。本发明的NORM单元由衬底，设置在衬底上的氧化硅/氮化硅/氧化硅（ONO）层，设置在氧化硅/氮化硅/氧化硅层上的栅极，源/漏区配置在栅极旁边的衬底中，以及配置在源极/漏极区域和栅极旁边的ONO层之间的浅阱掺杂区域。浅阱掺杂区域的深度足够小，以防止对流向源极/漏极区域的电流的干扰。

5. 发明授权

US06531361B1 Fabrication method for a memory device 有权
标题翻译：一种存储器件的制造方法
公开(公告)号：US06531361B1
公开(公告)日：2003-03-11
申请号：US10142720
申请日：2002-05-08
申请人： Mu-Yi Liu , Kwang-Yang Chan , Yen-Hung Yeh , Tso-Hung Fan , Tao-Cheng Lu
发明人： Mu-Yi Liu , Kwang-Yang Chan , Yen-Hung Yeh , Tso-Hung Fan , Tao-Cheng Lu
IPC分类号： H01L21336
CPC分类号： H01L27/105 , H01L27/1052
摘要： A fabrication method for a memory device is described. The method includes sequentially forming a pad oxide layer and a mask layer on a substrate, wherein the mask layer exposes a portion of the pad oxide layer. Thereafter, an ion implantation process is conducted to form a buried bit line in the substrate that is not covered by the mask layer. A raised bit line is then formed on the pad oxide layer above the buried bit line. The mask layer and the pad oxide layer are then removed, followed by forming a conformal gate oxide layer on the surface of the substrate and the raised bit line. A word line is further formed on the gate oxide layer.
摘要翻译：描述了一种用于存储器件的制造方法。该方法包括在衬底上顺序地形成衬垫氧化物层和掩模层，其中掩模层暴露衬垫氧化物层的一部分。此后，进行离子注入工艺以在衬底中形成未被掩模层覆盖的掩埋位线。然后在掩埋位线上方的焊盘氧化物层上形成隆起的位线。然后去除掩模层和焊盘氧化物层，随后在衬底的表面和凸起的位线上形成共形栅极氧化物层。在栅极氧化层上进一步形成字线。

6. 发明授权

US07002849B2 Method for programming and erasing non-volatile memory with nitride tunneling layer 有权
公开(公告)号：US07002849B2
公开(公告)日：2006-02-21
申请号：US10983019
申请日：2004-11-05
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： G11C16/04 , G11C5/06 , G06F12/00
CPC分类号： G11C16/0466 , G11C16/10 , G11C16/14
摘要： A method for programming and erasing a non-volatile memory with a nitride tunneling layer is described. The non-volatile memory is programmed by applying a first voltage to the gate and grounding the substrate to turn on a channel between the source and the drain, and applying a second voltage to the drain and grounding the source to induce a current in the channel and thereby to generate hot electrons therein. The hot electrons are injected into a charge-trapping layer of the non-volatile and trapped therein through the nitride tunneling layer. The non-volatile memory is erased by applying a first positive bias to the drain, applying a second positive bias to the gate, and grounding the source and the substrate to generate hot electron holes in the channel region. The hot electron holes are injected into the charge-trapping layer through the nitride tunneling layer.

7. 发明申请

US20050082597A1 Method for programming and erasing non-volatile memory with nitride tunneling layer 有权
标题翻译：用氮化物隧道层编程和擦除非易失性存储器的方法
公开(公告)号：US20050082597A1
公开(公告)日：2005-04-21
申请号：US10983019
申请日：2004-11-05
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： G11C16/04 , G11C16/10 , G11C16/14 , H01L29/788
CPC分类号： G11C16/0466 , G11C16/10 , G11C16/14
摘要： A method for programming and erasing a non-volatile memory with a nitride tunneling layer is described. The non-volatile memory is programmed by applying a first voltage to the gate and grounding the substrate to turn on a channel between the source and the drain, and applying a second voltage to the drain and grounding the source to induce a current in the channel and thereby to generate hot electrons therein. The hot electrons are injected into a charge-trapping layer of the non-volatile and trapped therein through the nitride tunneling layer. The non-volatile memory is erased by applying a first positive bias to the drain, applying a second positive bias to the gate, and grounding the source and the substrate to generate hot electron holes in the channel region. The hot electron holes are injected into the charge-trapping layer through the nitride tunneling layer.
摘要翻译：描述了用氮化物隧穿层编程和擦除非易失性存储器的方法。非易失性存储器通过向栅极施加第一电压并使衬底接地以接通源极和漏极之间的沟道并且向漏极施加第二电压并且将源接地以感应通道中的电流来编程从而在其中产生热电子。热电子通过氮化物隧穿层注入到非挥发性的电荷捕获层中并被捕获在其中。通过向漏极施加第一正偏压，向栅极施加第二正偏压，并且将源极和衬底接地以在沟道区域中产生热电子空穴来擦除非易失性存储器。热电子空穴通过氮化物隧穿层注入电荷捕获层。

8. 发明授权

US06587387B1 Device and method for testing mask ROM for bitline to bitline isolation leakage 有权
标题翻译：用于测试屏蔽ROM的位线到位线隔离泄漏的设备和方法
公开(公告)号：US06587387B1
公开(公告)日：2003-07-01
申请号：US10055571
申请日：2002-01-22
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： G11C2900
CPC分类号： G11C29/025 , G11C17/14 , G11C29/02 , G11C2029/5006
摘要： A Mask ROM testing device is described. The Mask ROM testing device comprises a substrate, a plurality of buried bit-lines in the substrate and a plurality of word-lines on the substrate perpendicular to the buried bit-lines. Each buried bit-line has two end portions with a combined length of about 3˜30 &mgr;m and can have an N-type conductivity or a P-type conductivity.
摘要翻译：描述了面罩ROM测试装置。掩模ROM测试装置包括衬底，衬底中的多个掩埋位线和垂直于掩埋位线的衬底上的多个字线。每个埋置的位线具有两个具有约3〜30μm的组合长度的端部，并且可以具有N型导电性或P型导电性。

9. 发明授权

US06838691B2 Chalcogenide memory and method of manufacturing the same 有权
标题翻译：硫族元素记忆及其制造方法
公开(公告)号：US06838691B2
公开(公告)日：2005-01-04
申请号：US10090542
申请日：2002-03-04
申请人： Mu-Yi Liu , Tso-Hung Fan , Kwang-Yang Chan , Yen-Hung Yeh , Tao-Cheng Lu
发明人： Mu-Yi Liu , Tso-Hung Fan , Kwang-Yang Chan , Yen-Hung Yeh , Tao-Cheng Lu
IPC分类号： H01L27/24 , H01L29/04 , H01L29/06
CPC分类号： H01L27/24
摘要： A method of manufacturing chalcogenide memory in a semiconductor substrate. The method includes the steps of forming a N+ epitaxy layer on the semiconductor substrate; forming a N− epitaxy layer on the N+ epitaxy layer; forming a first STI in the N+ and N− epitaxy layers to isolate a predetermined word line region; forming a second STI in the N− epitaxy layer to isolate a predetermined P+ doped region; forming a dielectric layer on the N− epitaxy layer; patterning the dielectric layer to form a first opening and performing a N+ doping on the N− epitaxy layer via the first opening such that a N+ doped region is formed in the N− epitaxy layer and connected to the N+ epitaxy layer; patterning the dielectric layer to form a second opening and performing a P+ doping on the N− epitaxy layer such that a P+ doped region is formed; forming contact plugs in the first opening and the second opening respectively; and forming an electrode on each contact plug, wherein the electrode includes a lower electrode, a chalcogenide layer and an upper electrode.
摘要翻译：在半导体衬底中制造硫族化物存储器的方法。该方法包括在半导体衬底上形成N +外延层的步骤; 在N +外延层上形成N-外延层; 在N +和N-外延层中形成第一STI以隔离预定的字线区域; 在所述N-外延层中形成第二STI以隔离预定的P +掺杂区; 在所述N-外延层上形成介电层; 图案化介电层以形成第一开口，并且经由第一开口在N外延层上进行N +掺杂，使得N +掺杂区形成在N外延层中并连接到N +外延层; 图案化介电层以形成第二开口并且在N外延层上执行P +掺杂以形成P +掺杂区域; 分别在所述第一开口和所述第二开口中形成接触塞; 以及在每个接触塞上形成电极，其中所述电极包括下电极，硫族化物层和上电极。

10. 发明授权

US06834013B2 Method for programming and erasing non-volatile memory with nitride tunneling layer 有权
标题翻译：用氮化物隧道层编程和擦除非易失性存储器的方法
公开(公告)号：US06834013B2
公开(公告)日：2004-12-21
申请号：US10015414
申请日：2001-12-12
申请人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
发明人： Tso-Hung Fan , Yen-Hung Yeh , Kwang-Yang Chan , Mu-Yi Liu , Tao-Cheng Lu
IPC分类号： G11C1604
CPC分类号： G11C16/0466 , G11C16/10 , G11C16/14
摘要： A method for programming and erasing a non-volatile memory with a nitride tunneling layer is described. The non-volatile memory is programmed by applying a first voltage to the gate and grounding the substrate to turn on a channel between the source and the drain, and applying a second voltage to the drain and grounding the source to induce a current in the channel and thereby to generate hot electrons therein. The hot electrons are injected into a charge-trapping layer of the non-volatile and trapped therein through the nitride tunneling layer. The non-volatile memory is erased by applying a first positive bias to the drain, applying a second positive bias to the gate, and grounding the source and the substrate to generate hot electron holes in the channel region. The hot electron holes are injected into the charge-trapping layer through the nitride tunneling layer.
摘要翻译：描述了用氮化物隧穿层编程和擦除非易失性存储器的方法。非易失性存储器通过向栅极施加第一电压并使衬底接地以接通源极和漏极之间的沟道并且向漏极施加第二电压并且将源接地以感应通道中的电流来编程从而在其中产生热电子。热电子通过氮化物隧穿层注入到非挥发性的电荷捕获层中并被捕获在其中。通过向漏极施加第一正偏压，向栅极施加第二正偏压，并且将源极和衬底接地以在沟道区域中产生热电子空穴来擦除非易失性存储器。热电子空穴通过氮化物隧穿层注入电荷捕获层。

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