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1. 发明授权

US10522974B2 Edge-emitting laser having small vertical emitting angle 有权
公开(公告)号：US10522974B2
公开(公告)日：2019-12-31
申请号：US15994971
申请日：2018-05-31
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng-Ju Wu
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343
摘要： An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

2. 发明申请

US20180366908A1 EDGE-EMITTING LASER HAVING SMALL VERTICAL EMITTING ANGLE 审中-公开
公开(公告)号：US20180366908A1
公开(公告)日：2018-12-20
申请号：US15994971
申请日：2018-05-31
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng-Ju Wu
IPC分类号： H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01S5/2027 , H01S5/2018 , H01S5/2031 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3219 , H01S5/3235 , H01S5/34306 , H01S5/34313 , H01S2301/18
摘要： An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

3. 发明申请

US20210143610A1 Surface Emitting Laser With Hybrid Grating Structure 有权
公开(公告)号：US20210143610A1
公开(公告)日：2021-05-13
申请号：US17033763
申请日：2020-09-26
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/183 , H01S5/32 , H01S5/10
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ⋀ = m ⁢ λ 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ⋀ = o ⁢ λ 2 * n eff . Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

4. 发明授权

US11967800B2 Surface emitting laser with hybrid grating structure 有权
公开(公告)号：US11967800B2
公开(公告)日：2024-04-23
申请号：US18199960
申请日：2023-05-21
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/11 , H01S5/12 , H01S5/183 , H01S5/185 , H01S5/32
CPC分类号： H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:

∧

=

m
⁢

λ

2
⋆

n
eff

;

in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:

∧

=

o
⁢

λ

2
⋆

n
eff

.

Wherein ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

5. 发明授权

US11791609B2 Surface emitting laser with hybrid grating structure 有权
公开(公告)号：US11791609B2
公开(公告)日：2023-10-17
申请号：US17033763
申请日：2020-09-26
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/11 , H01S5/12 , H01S5/183 , H01S5/32 , H01S5/185
CPC分类号： H01S5/11 , H01S5/124 , H01S5/1215 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:

⋀

=

m
⁢

λ

2
*

n
eff

;

in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:

⋀

=

o
⁢

λ

2
*

n
eff

.

Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

6. 发明申请

US20190115717A1 Structure And Fabricating Method Of Distributed Feedback Laser 审中-公开
公开(公告)号：US20190115717A1
公开(公告)日：2019-04-18
申请号：US15922611
申请日：2018-03-15
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/026 , H01S5/028 , H01S5/02 , H01S5/12
CPC分类号： H01S5/1203 , H01S5/0206 , H01S5/0268 , H01S5/028 , H01S5/0287 , H01S5/1225 , H01S5/1228 , H01S5/124 , H01S5/22
摘要： A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

7. 发明公开

US20230291177A1 Surface Emitting Laser With Hybrid Grating Structure 审中-公开
公开(公告)号：US20230291177A1
公开(公告)日：2023-09-14
申请号：US18199960
申请日：2023-05-21
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/11 , H01S5/183 , H01S5/32 , H01S5/12 , H01S5/185
CPC分类号： H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:

Λ
=
m

λ

2
∗

n

e
f
f

;

in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:

Λ
=
O

λ

2
∗

n

e
f
f

.

Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

8. 发明授权

US10581223B2 Structure and fabricating method of distributed feedback laser 有权
公开(公告)号：US10581223B2
公开(公告)日：2020-03-03
申请号：US15922611
申请日：2018-03-15
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/12 , H01S5/026 , H01S5/02 , H01S5/028 , H01S5/22
摘要： A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

9. 发明授权

US10014663B1 Edge-emitting laser having small vertical emitting angle 有权
公开(公告)号：US10014663B1
公开(公告)日：2018-07-03
申请号：US15624934
申请日：2017-06-16
申请人： TrueLight Corporation
发明人： Chien Hung Pan , Cheng-Ju Wu
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01S5/2027 , H01S5/2018 , H01S5/2031 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3219 , H01S5/3235 , H01S5/34306 , H01S5/34313 , H01S2301/18
摘要： An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

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