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1. 发明授权

US08753801B2 Photosensitive composition, pattern forming material, and photosensitive film, pattern forming method, pattern film, low refractive index film, optical device and solid-state imaging device each using the same 失效
$Photosensitive composition, pattern forming material, and photosensitive film, pattern forming method, pattern film, low refractive index film, optical device and solid-state imaging device each using the same$
标题翻译：感光组合物，图案形成材料和感光膜，图案形成方法，图案膜，低折射率膜，光学器件和使用其的固体摄像器件
公开(公告)号：US08753801B2
公开(公告)日：2014-06-17
申请号：US13172937
申请日：2011-06-30
申请人： Toshiyuki Saie , Kenji Wada , Masaomi Makino , Hisamitsu Tomeba , Mitsuji Yoshibayashi
发明人： Toshiyuki Saie , Kenji Wada , Masaomi Makino , Hisamitsu Tomeba , Mitsuji Yoshibayashi
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/0007 , G03F7/0047 , G03F7/033 , H01L2924/3025 , Y10T428/24802 , H01L2924/00
摘要： A photosensitive composition contains (A) a hollow or porous particle, (B) a compound capable of generating an active species upon irradiation with an actinic ray or radiation, and (C) a compound capable of changing in the solubility for an alkali developer by the action of the active species.
摘要翻译：光敏组合物含有（A）中空或多孔颗粒，（B）能够在用光化学射线或辐射照射时能够产生活性物质的化合物，和（C）能够通过以下方式改变碱显影剂的溶解度的化合物：活性物种的作用。

2. 发明授权

US08202445B2 Metal polishing composition and chemical mechanical polishing method 有权
标题翻译：金属抛光组合物和化学机械抛光方法
公开(公告)号：US08202445B2
公开(公告)日：2012-06-19
申请号：US12404353
申请日：2009-03-16
申请人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
发明人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
IPC分类号： C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409
摘要： The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.
摘要翻译：本发明提供一种用于制造半导体器件的化学机械抛光中的金属抛光组合物，包括氧化剂，磨粒和至少一种选自下式（I）表示的化合物和下述式式（II）。本发明还提供了使用金属抛光组合物的化学机械抛光方法。在式（I）中，R 1表示氢原子或烷基，Ph表示苯基。式（II）中，R 2表示氢原子或烷基，Ph表示苯基。

3. 发明授权

US08715524B2 Polishing liquid 有权
标题翻译：抛光液
公开(公告)号：US08715524B2
公开(公告)日：2014-05-06
申请号：US12036686
申请日：2008-02-25
申请人： Tetsuya Kamimura , Toshiyuki Saie , Masaru Yoshikawa
发明人： Tetsuya Kamimura , Toshiyuki Saie , Masaru Yoshikawa
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： C23F3/00 , C09G1/02 , H01L21/3212
摘要： The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
摘要翻译：本发明提供了一种用于抛光半导体集成电路的阻挡层的抛光液，该抛光液包括：二季铵阳离子; 腐蚀抑制剂; 和胶体二氧化硅，其中抛光液的pH在2.5至5.0的范围内。根据本发明，可以提供能够实现优异的阻挡层研磨速度的抛光液，以及抑制由于固体磨粒的凝聚而引起的刮擦的发生。

4. 发明授权

US08404146B2 Polishing liquid and polishing method 有权
公开(公告)号：US08404146B2
公开(公告)日：2013-03-26
申请号：US12379331
申请日：2009-02-19
申请人： Toshiyuki Saie
发明人： Toshiyuki Saie
IPC分类号： C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.

5. 发明申请

US20090087988A1 POLISHING LIQUID AND POLISHING METHOD 审中-公开
标题翻译：抛光液和抛光方法
公开(公告)号：US20090087988A1
公开(公告)日：2009-04-02
申请号：US12235475
申请日：2008-09-22
申请人： Toshiyuki Saie
发明人： Toshiyuki Saie
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： A polishing liquid is provided which is used for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including surface modified particles that include organic polymer particles having at least one inorganic atom selected from the group consisting of Ti, Al, Zr and Si bonded to the organic polymer particles via an oxygen atom present on a surface of the organic polymer particles, an organic acid, an azole compound having at least two carboxyl groups, and an oxidizing agent, the polishing liquid having a pH of from 1 to 7; and a polishing method for polishing a barrier layer of a semiconductor integrated circuit is also provided.
摘要翻译：提供了用于研磨半导体集成电路的阻挡层的研磨液，所述研磨液含有表面改性粒子，其包含具有选自Ti，Al，Zr和Si中的至少一种无机原子的有机聚合物粒子通过存在于有机聚合物颗粒的表面上的氧原子，有机酸，具有至少两个羧基的唑类化合物和氧化剂与有机聚合物颗粒结合，该抛光液的pH为1至7 ; 还提供了用于研磨半导体集成电路的阻挡层的抛光方法。

6. 发明申请

US20080203354A1 POLISHING LIQUID 有权
标题翻译：抛光液
公开(公告)号：US20080203354A1
公开(公告)日：2008-08-28
申请号：US12036686
申请日：2008-02-25
申请人： Tetsuya KAMIMURA , Toshiyuki Saie , Masaru Yoshikawa
发明人： Tetsuya KAMIMURA , Toshiyuki Saie , Masaru Yoshikawa
IPC分类号： C09K13/00
CPC分类号： C23F3/00 , C09G1/02 , H01L21/3212
摘要： The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
摘要翻译：本发明提供了一种用于抛光半导体集成电路的阻挡层的抛光液，该抛光液包括：二季铵阳离子; 腐蚀抑制剂; 和胶体二氧化硅，其中抛光液的pH在2.5至5.0的范围内。根据本发明，可以提供能够实现优异的阻挡层研磨速度的抛光液，以及抑制由于固体磨粒的凝聚而引起的刮擦的发生。

7. 发明授权

US08409467B2 Polishing liquid for semiconductor integrated circuit 有权
标题翻译：半导体集成电路抛光液
公开(公告)号：US08409467B2
公开(公告)日：2013-04-02
申请号：US12209409
申请日：2008-09-12
申请人： Toshiyuki Saie , Tetsuya Kamimura
发明人： Toshiyuki Saie , Tetsuya Kamimura
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.
摘要翻译：一种用于抛光半导体集成电路的阻挡层的抛光液，该液体包括：季铵阳离子; 腐蚀抑制剂; 末端具有磺基的高分子化合物; 无机颗粒; 和有机酸，研磨液的pH在1〜7的范围内。

8. 发明申请

US20090215270A1 Polishing liquid and polishing method 有权
标题翻译：抛光液和抛光方法
公开(公告)号：US20090215270A1
公开(公告)日：2009-08-27
申请号：US12379331
申请日：2009-02-19
申请人： Toshiyuki Saie
发明人： Toshiyuki Saie
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.
摘要翻译：提供了一种抛光液，其具有良好的储存稳定性，并且能够在使用期间抑制由固体磨粒等的聚集引起的刮擦的产生。还提供了使用抛光液的抛光方法。抛光液包括：（a）相对于水溶液A的总质量，含有5质量％至40质量％的胶体二氧化硅颗粒的水溶液A，其pH为1至7; 和（b）包含季铵阳离子的水溶液B，其中分别制备和混合水溶液A和水溶液B以在抛光之前立即提供抛光液。

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