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1. 发明授权

US07298594B2 Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices 失效
标题翻译：电场效应磁阻器件和使用磁阻器件的电子器件
公开(公告)号：US07298594B2
公开(公告)日：2007-11-20
申请号：US10862323
申请日：2004-06-08
申请人： Toshiyuki Onogi , Masahiko Ichimura , Tomihiro Hashizume
发明人： Toshiyuki Onogi , Masahiko Ichimura , Tomihiro Hashizume
IPC分类号： G11B5/127
CPC分类号： G11C19/0808 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/332 , G11B5/376 , G11B5/3903 , G11B5/3993 , G11B2005/3996 , G11C11/14 , H01L43/08
摘要： Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.
摘要翻译：具有对外部磁场的响应灵敏度增加的磁阻器件和增加的磁阻比（MR比），以应对高密度磁记录装置中的快速进展。在能够在电场中掺杂有载流子（空穴）的基板上的平坦形状层叠图案化的介电层，然后在该电介质层上制造具有栅电极的FET结构，并且通过施加空穴调制不均匀电场以诱导第一铁磁畴，非磁畴和第二铁磁畴。

2. 发明授权

US06299990B1 Ferromagnetic material and magnetic apparatus employing the ferromagnetic material 失效
标题翻译：使用铁磁材料的铁磁材料和磁性装置
公开(公告)号：US06299990B1
公开(公告)日：2001-10-09
申请号：US09375439
申请日：1999-08-17
申请人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
发明人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
IPC分类号： G11B566
CPC分类号： B82Y30/00 , B82B1/00 , B82B3/00 , B82Y15/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3945 , G11B5/3961 , G11B5/3967 , G11B5/49 , G11B5/4984 , G11B2005/0005 , H01F1/0036 , H01F1/0302 , Y10S428/90 , Y10T428/1136 , Y10T428/1193 , Y10T428/32
摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.
摘要翻译：铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团）作为第一原子（11）或与第一原子（11）不同的一种。在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14），在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子。

3. 发明授权

US06187458B1 Ferromagnetic fine line and magnetic apparatus thereof 失效
标题翻译：铁磁细线及其磁性装置
公开(公告)号：US06187458B1
公开(公告)日：2001-02-13
申请号：US09110183
申请日：1998-07-06
申请人： Tomihiro Hashizume , Satoshi Watanabe , Toshiyuki Onogi , Yasuo Wada , Masahiko Ichimura , Yoshimasa Ono
发明人： Tomihiro Hashizume , Satoshi Watanabe , Toshiyuki Onogi , Yasuo Wada , Masahiko Ichimura , Yoshimasa Ono
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/62 , G11B5/64 , G11B5/74 , G11B5/855 , G11B2005/0002 , H01F1/0072 , H01F1/0081 , H01F1/009 , H01F10/3227 , Y10S428/90
摘要： A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.
摘要翻译：铁磁细线即使制造超小，也不会有自发磁化的损失。可以通过电极和原子水平结构的接近来控制磁化，并且通过将铁磁细线嵌入非磁性原子层中来防止杂质的吸附。

4. 发明授权

US06475650B2 Ferromagnetic material and magnetic apparatus employing the ferromagnetic material 失效
标题翻译：使用铁磁材料的铁磁材料和磁性装置
公开(公告)号：US06475650B2
公开(公告)日：2002-11-05
申请号：US09961292
申请日：2001-09-25
申请人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
发明人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
IPC分类号： G11B539
CPC分类号： B82Y30/00 , B82B1/00 , B82B3/00 , B82Y15/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3945 , G11B5/3961 , G11B5/3967 , G11B5/49 , G11B5/4984 , G11B2005/0005 , H01F1/0036 , H01F1/0302 , Y10S428/90 , Y10T428/1136 , Y10T428/1193 , Y10T428/32
摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.
摘要翻译：铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和其第三原子（或原子团）（13）组成的基本单元结构作为第一原子（11）或与第一原子（11）不同的一种。在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14），在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子。

5. 发明授权

US5968677A Ferromagnetic material and magnetic apparatus employing the ferromagnetic material 失效
标题翻译：使用铁磁材料的铁磁材料和磁性装置
公开(公告)号：US5968677A
公开(公告)日：1999-10-19
申请号：US993196
申请日：1997-12-18
申请人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada
发明人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada
IPC分类号： B82B1/00 , B82B3/00 , G01Q60/16 , G11B5/00 , G11B5/39 , G11B5/49 , H01F1/00 , H01F1/03 , G11B5/66
CPC分类号： B82Y30/00 , B82B1/00 , B82B3/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3945 , G11B5/3961 , G11B5/3967 , G11B5/49 , G11B5/4984 , H01F1/0036 , H01F1/0302 , G11B2005/0005 , Y10S428/90 , Y10S977/788 , Y10T428/1136
摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.
摘要翻译：铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团）作为第一原子（11）或与第一原子（11）不同的一种。在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或第三原子或分子之间形成化学键（14），化学键（14）形成在第二原子和第三原子或分子，在第一和第二原子之间形成化学键或不通过第三原子的电子通路（15）。

6. 发明申请

US20050196675A1 Rechargeable lithium battery containing ion-irradiated carbonaceous material and production thereof 审中-公开
标题翻译：含有离子辐射碳质材料的可充电锂电池及其制造
公开(公告)号：US20050196675A1
公开(公告)日：2005-09-08
申请号：US10928252
申请日：2004-08-30
申请人： Tomihiro Hashizume , Masahiko Ichimura , Masahiro Kasai , Rikizo Hatakeyama , Yoshiyuki Kawazoe
发明人： Tomihiro Hashizume , Masahiko Ichimura , Masahiro Kasai , Rikizo Hatakeyama , Yoshiyuki Kawazoe
IPC分类号： H01M10/05 , B05D5/12 , C01B31/30 , H01M4/1393 , H01M4/36 , H01M4/587 , H01M4/58
CPC分类号： H01M4/587 , H01M4/1393
摘要： A rechargeable lithium battery includes an anode doped with lithium ions in an amount corresponding to the irreversible capacity. The anode is produced by applying lithium ions to an anodic active carbonaceous material. The anode may be produced by applying a slurry of the anodic active material composition containing a carbonaceous material to an anodic collector, drying and compression-molding the resulting article, and applying lithium ions to the molded article. Alternatively, the lithium-doped anode may be produced by applying lithium ions in the production of a carbonaceous material to yield a carbonaceous material containing lithium ions, and mixing the same with a carbonaceous material containing no lithium ions. The resulting rechargeable lithium battery using, for example, amorphous carbon as an anodic active material and a lithium transition metal compound as a cathodic active material shows a reduced irreversible capacity.
摘要翻译：可再充电锂电池包括掺杂有相当于不可逆容量的量的锂离子的阳极。通过将锂离子施加到阳极活性碳质材料上来制造阳极。阳极可以通过将含有碳质材料的阳极活性物质组合物的浆料施加到阳极集电体上，干燥和压缩所得制品，并将锂离子施加到模塑制品上来制备。或者，掺杂锂的阳极可以通过在生产碳质材料中施加锂离子以产生含有锂离子的碳质材料，并将其与不含锂离子的碳质材料混合来制造。使用例如作为阳极活性物质的无定形碳和作为阴极活性物质的锂过渡金属化合物的所得可再充电锂电池显示降低的不可逆容量。

7. 发明授权

US07688623B2 Magnetic memory cell and magnetic memory device 有权
标题翻译：磁存储单元和磁存储器件
公开(公告)号：US07688623B2
公开(公告)日：2010-03-30
申请号：US11970550
申请日：2008-01-08
申请人： Sadamichi Maekawa , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
发明人： Sadamichi Maekawa , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
摘要翻译：本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。第一和第二磁化钉扎端子的磁化方向彼此反平行。通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

8. 发明授权

US4151340A Process for producing fluorocopolymer 失效
标题翻译：含氟共聚物的制造方法
公开(公告)号：US4151340A
公开(公告)日：1979-04-24
申请号：US870098
申请日：1978-01-17
申请人： Masahiko Ichimura , Haruhisa Miyake , Shun-ichi Kodama , Michio Hisasue
发明人： Masahiko Ichimura , Haruhisa Miyake , Shun-ichi Kodama , Michio Hisasue
IPC分类号： C08F14/00 , C08F14/18 , C08F14/24 , C08F16/00 , C08F16/16 , C08F214/18 , C08F216/16 , C08F214/24 , C08F214/26
CPC分类号： C08F216/165 , C08F214/188 , Y10T428/31649 , Y10T428/31699 , Y10T428/31855
摘要： A fluorocopolymer is produced by copolymerizing a fluoroolefin and cyclohexyl vinyl ether in the presence of a polymerization initiator at -30.degree. to +150.degree. C. at a molar ratio of the fluoroolefin to cyclohexyl vinyl ether in charge of 95:5 to 5:95.
摘要翻译：氟聚烯烃与环己基乙烯基醚在聚合引发剂存在下，在-30至+ 150℃下以氟乙烯与环己基乙烯基醚的摩尔比为95:5至5:95的摩尔比共聚制得含氟共聚物。

9. 发明申请

US20080175044A1 MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆体和磁记忆体装置
公开(公告)号：US20080175044A1
公开(公告)日：2008-07-24
申请号：US11970550
申请日：2008-01-08
申请人： Sadamichi MAEKAWA , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
发明人： Sadamichi MAEKAWA , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
摘要翻译：本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。第一和第二磁化钉扎端子的磁化方向彼此反平行。通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

10. 发明授权

US09086445B2 Magnetic detection device 有权
标题翻译：磁检测装置
公开(公告)号：US09086445B2
公开(公告)日：2015-07-21
申请号：US14079195
申请日：2013-11-13
申请人： Ryoko Sugano , Masahiko Ichimura , Akihiko Kandori
发明人： Ryoko Sugano , Masahiko Ichimura , Akihiko Kandori
IPC分类号： B82Y25/00 , G01R33/09
CPC分类号： G01R33/093
摘要： To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.
摘要翻译：为了增加来自磁阻元件的输出而不使用特殊的磁性材料，提供了一种磁检测装置，其包括磁阻元件，磁阻元件包括具有固定磁化方向的铁磁参考层，自旋波感应层连接到该铁磁参考层，使得旋转波感应层通过内部产生的自旋电动势向铁磁参考层中注入具有沿特定方向旋转的电子。

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