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1. 发明授权

US5514508A Electrophotosensitive material 失效
标题翻译：电光敏材料
公开(公告)号：US5514508A
公开(公告)日：1996-05-07
申请号：US445055
申请日：1995-05-19
申请人： Toshiyuki Fukami , Hideo Nakamori , Hiroshi Shiomi , Hirofumi Kawaguchi , Hisakazu Uegaito , Nariaki Muto , Mikio Kakui , Keisuke Sumida , Sakae Saito , Maki Uchida
发明人： Toshiyuki Fukami , Hideo Nakamori , Hiroshi Shiomi , Hirofumi Kawaguchi , Hisakazu Uegaito , Nariaki Muto , Mikio Kakui , Keisuke Sumida , Sakae Saito , Maki Uchida
IPC分类号： G03G5/06
CPC分类号： G03G5/0679 , G03G5/0605 , G03G5/0607 , G03G5/0609 , G03G5/0612 , G03G5/0618 , G03G5/062 , G03G5/0681
摘要： The present invention provides an electrophotosensitive material having an improved sensitivity in comparison with a conventional one, obtained by combining a trinitrofluorenoneimine derivative represented by the formula (1): ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are the same or different and indicate a hydrogen atom, an alkyl group, an alkoxy group, an aryl group which may contain a substituent, an aralkyl group which may contain a substituent, or a halogen atom! as an electron transferring material with a prescribed electric charge generating material or hole transferring material.
摘要翻译：本发明提供了一种通过组合由式（1）表示的三硝基芴酮亚胺衍生物获得的传统的光敏感材料：其中R1，R2，R3，R4和R5是相同或不同，表示氢原子，烷基，烷氧基，可以含有取代基的芳基，可以含有取代基的芳烷基或卤原子]作为具有规定电子的电子转移材料电荷产生材料或空穴转移材料。

2. 发明授权

US5773613A Tryptoanthrinimine derivative and electrophotosensitive material using the same 失效
标题翻译：色氨酸亚胺衍生物和使用其的电光敏材料
公开(公告)号：US5773613A
公开(公告)日：1998-06-30
申请号：US563545
申请日：1995-11-28
申请人： Hirofumi Kawaguchi , Nobuko Akiba , Yukimasa Watanabe , Hiroaki Iwasaki , Yasuyuki Hanatani , Yasufumi Mizuta , Fumio Sugai , Sakae Saito , Syunichi Matsumoto , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
发明人： Hirofumi Kawaguchi , Nobuko Akiba , Yukimasa Watanabe , Hiroaki Iwasaki , Yasuyuki Hanatani , Yasufumi Mizuta , Fumio Sugai , Sakae Saito , Syunichi Matsumoto , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
IPC分类号： G03G5/06 , C07D487/02
CPC分类号： G03G5/0642 , G03G5/0614
摘要： The present invention provides a tryptoanthrinimine derivative represented by the general formula (Y): ##STR1## wherein R.sup.A to R.sup.M are as defined. Such a derivative of the general formula (Y) is superior in electron transferring capability. Accordingly, an electrophotosensitive material comprising a photosensitive layer containing this derivative (Y) is superior in sensitivity.
摘要翻译：本发明提供由通式（Y）表示的色氨酰亚胺衍生物：其中RA与RM的定义相同。这种通式（Y）的衍生物在电子转移能力上是优异的。因此，包含含有该衍生物（Y）的感光层的电光敏材料的灵敏度优异。

3. 发明授权

US5994012A Naphthoquinone derivative and electrophotosensitive material using same 失效
标题翻译：萘醌衍生物和使用它们的电光敏材料
公开(公告)号：US5994012A
公开(公告)日：1999-11-30
申请号：US937448
申请日：1997-09-25
申请人： Yukimasa Watanabe , Sakae Saito , Hirofumi Kawaguchi , Akiyoshi Urano , Fumio Sugai , Atsushi Fujii , Yasufumi Mizuta , Toshiyuki Fukami , Ichiro Yamazato , Yuji Tanaka , Eiichi Miyamoto , Hideo Nakamori , Mitsuo Ihara
发明人： Yukimasa Watanabe , Sakae Saito , Hirofumi Kawaguchi , Akiyoshi Urano , Fumio Sugai , Atsushi Fujii , Yasufumi Mizuta , Toshiyuki Fukami , Ichiro Yamazato , Yuji Tanaka , Eiichi Miyamoto , Hideo Nakamori , Mitsuo Ihara
IPC分类号： C07C45/67 , C07C45/68 , C07C46/06 , C07C50/38 , C07C69/757 , G03G5/05 , G03G5/06 , G03G5/047 , G03G5/09
CPC分类号： G03G5/0614 , C07C45/67 , C07C45/68 , C07C46/06 , C07C50/38 , G03G5/0517 , G03G5/0609
摘要： The present invention provides a naphthoquinone derivative represented by the general formula (I): ##STR1## wherein R.sup.1 and R.sup.2 are as defined in the specification. An electrophotosensitive material containing this naphthoquinone derivative as an electron transferring material has high sensitivity.
摘要翻译：本发明提供由通式（I）表示的萘醌衍生物：其中R1和R2如说明书中所定义。含有该萘醌衍生物作为电子转移材料的光敏材料具有高灵敏度。

4. 发明授权

US5863688A Naphthoquinone derivative 失效
标题翻译：萘醌衍生物
公开(公告)号：US5863688A
公开(公告)日：1999-01-26
申请号：US709040
申请日：1996-09-06
申请人： Yukimasa Watanabe , Sakae Saito , Hirofumi Kawaguchi , Akiyoshi Urano , Fumio Sugai , Atsushi Fujii , Yasufumi Mizuta , Toshiyuki Fukami , Ichiro Yamazato , Yuji Tanaka , Eiichi Miyamoto , Hideo Nakamori , Mitsuo Ihara
发明人： Yukimasa Watanabe , Sakae Saito , Hirofumi Kawaguchi , Akiyoshi Urano , Fumio Sugai , Atsushi Fujii , Yasufumi Mizuta , Toshiyuki Fukami , Ichiro Yamazato , Yuji Tanaka , Eiichi Miyamoto , Hideo Nakamori , Mitsuo Ihara
IPC分类号： C07C45/67 , C07C45/68 , C07C46/06 , C07C50/38 , C07C69/757 , G03G5/05 , G03G5/06 , G03G5/00
CPC分类号： G03G5/0614 , C07C45/67 , C07C45/68 , C07C46/06 , C07C50/38 , G03G5/0517 , G03G5/0609
摘要： The present invention provides a naphthoquinone derivative represented by the general formula (I): ##STR1## wherein R.sup.1 and R.sup.2 are as defined in the specification. An electrophotosensitive material containing this naphthoquinone derivative as an electron transferring material has high sensitivity.
摘要翻译：本发明提供由通式（I）表示的萘醌衍生物：在本说明书中。含有该萘醌衍生物作为电子转移材料的光敏材料具有高灵敏度。

5. 发明授权

US5705694A Trinitrofluoroenonimine derivative and electrophotosensitive material using the same 失效
标题翻译：三硝基氟代亚胺衍生物和使用其的电光敏材料
公开(公告)号：US5705694A
公开(公告)日：1998-01-06
申请号：US560493
申请日：1995-11-17
申请人： Hirofumi Kawaguchi , Yasufumi Mizuta , Syunichi Matsumoto , Nobuko Akiba , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
发明人： Hirofumi Kawaguchi , Yasufumi Mizuta , Syunichi Matsumoto , Nobuko Akiba , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
IPC分类号： C07C251/20 , G03G5/06 , C07C251/24 , G03G15/00 , G03G15/02
CPC分类号： G03G5/0618 , C07C251/20 , C07C2103/18
摘要： The present invention provides a novel trinitrofluorenonimine derivative represented by the general formula (1): ##STR1## wherein R.sup.0 is an alkyl group; and R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are the same or different and indicate a hydrogen atom, an alkyl, an alkoxy, an aryl, an aralkyl, a halogen atom or an alkyl halide. This derivative is superior in electron transferring capability and compatibility with binding resin. Accordingly, an electrophotosensitive material comprising this derivative as an electron transferring material is superior in sensitivity.
摘要翻译：本发明提供由通式（1）表示的新型三硝基芴酮亚胺衍生物：其中R 0为烷基; R 1，R 2，R 3，R 4和R 5相同或不同，表示氢原子，烷基，烷氧基，芳基，芳烷基，卤原子或烷基卤。该衍生物具有优异的电子转移能力和与粘合树脂的相容性。因此，包含该衍生物作为电子转移材料的电光敏材料的灵敏度优异。

6. 发明授权

US5616441A Tryptoanthorine derivative contained in electrophotosensitive material 失效
标题翻译：含有光敏材料的色氨酸衍生物
公开(公告)号：US5616441A
公开(公告)日：1997-04-01
申请号：US527776
申请日：1995-09-13
申请人： Hirofumi Kawaguchi , Yasufumi Mizuta , Syunichi Matsumoto , Nobuko Akiba , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
发明人： Hirofumi Kawaguchi , Yasufumi Mizuta , Syunichi Matsumoto , Nobuko Akiba , Toshiyuki Fukami , Ichiro Yamazato , Hisakazu Uegaito , Yuji Tanaka
IPC分类号： C07D487/04 , G03G5/06
CPC分类号： C07D487/04 , G03G5/0614 , G03G5/0651
摘要： According to the present invention, there is provided a novel tryptoanthorine derivative represented by the formula: ##STR1## wherein R.sup.1a, R.sup.1b, R.sup.1c, R.sup.1d, R.sup.2a, R.sup.2b, R.sup.2c, and R.sup.2d are the same or different and indicate a hydrogen atom, an alkyl group or a halogenated alkyl group; provided that R.sup.1a, R.sup.1b, R.sub.1c and R.sup.1d do not indicate a hydrogen atom, simultaneously. Tryptoanthorine and a derivative thereof are suitably used for an electrophotosensitive material because of their excellent electron transferring capability.
摘要翻译：根据本发明，提供了一种由下式表示的新颖的色氨酸衍生物：其中R1a，R1b，R1c，R1d，R2a，R2b，R2c和R2d相同或不同，表示氢原子，烷基或卤代烷基; 条件是R1a，R1b，R1c和R1d同时不表示氢原子。由于其优异的电子传递能力，所以色素和其衍生物适用于电光敏材料。

7. 发明授权

US06090514A Electrophotographic photoreceptor 有权
标题翻译：电子照相感光体
公开(公告)号：US06090514A
公开(公告)日：2000-07-18
申请号：US367897
申请日：1999-08-20
申请人： Mikio Kakui , Hirofumi Kawaguchi , Akihiko Kawahara , Kazunari Hamasaki , Yoshio Inagaki , Ayako Yashima
发明人： Mikio Kakui , Hirofumi Kawaguchi , Akihiko Kawahara , Kazunari Hamasaki , Yoshio Inagaki , Ayako Yashima
IPC分类号： G03G5/06
CPC分类号： G03G5/0666 , G03G5/0614 , G03G5/0657 , G03G5/0681 , G03G5/0696
摘要： The present invention provides an electrophotosensitive material comprising a conductive substrate and a single photosensitive layer containing a stilbene derivative (hole transferring material) represented by the general formula (1): ##STR1## (wherein R.sup.1, R.sup.2, R.sup.5 and R.sup.6 are the same or different and represent an alkyl group, an alkoxy group, an aryl group, an aralkyl group or a halogen atom; m, n, p and q are the same or different and represent an integer of 0 to 3, with the proviso that m and n represent a different integer when substituents represented by R.sup.1 and R.sup.2 are the same and that p and q represent a different integer when substituents represented by R.sup.5 and R.sup.6 are the same; and R.sup.3 and R.sup.4 are the same or different and represent a hydrogen atom or an alkyl group) and an electron transferring material, which is provided on the conductive substrate. This photosensitive material has high sensitivity and can be applied to any of positive and negative charging types with a single construction, and is also superior in optical characteristics.
摘要翻译： PCT No.PCT / JP98 / 00787 Sec。 371日期1999年8月20日 102（e）日期1999年8月20日PCT提交1998年2月25日PCT公布。公开号WO98 / 38551 日期：1998年9月3日本发明提供一种电光敏材料，其包含导电性基材和含有通式（1）表示的二苯乙烯衍生物（空穴转移材料）的单一感光层：（其中R1，R2，R5和R6为相同或不同，表示烷基，烷氧基，芳基，芳烷基或卤素原子; m，n，p和q相同或不同，表示0〜3的整数，条件是当由R 1和R 2表示的取代基相同时，m和n表示不同的整数，并且当由R 5和R 6表示的取代基相同时，p和q表示不同的整数;并且R 3和R 4相同或不同，表示氢原子或烷基）和电子转移材料，其设置在导电基板上。该感光材料具有高灵敏度，并且可以应用于具有单一结构的任何正和负电荷类型，并且还具有优异的光学特性。

8. 发明授权

US09231159B2 Method of manufacturing nitride semiconductor light emitting element having thick metal bump 有权
标题翻译：制造具有厚金属凸块的氮化物半导体发光元件的方法
公开(公告)号：US09231159B2
公开(公告)日：2016-01-05
申请号：US13457307
申请日：2012-04-26
申请人： Akinori Yoneda , Hirofumi Kawaguchi , Kouichiroh Deguchi
发明人： Akinori Yoneda , Hirofumi Kawaguchi , Kouichiroh Deguchi
IPC分类号： H01L33/00 , H01L33/38 , H01L33/44 , H01L33/40
CPC分类号： H01L33/62 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2224/0345 , H01L2224/03472 , H01L2224/0401 , H01L2224/05564 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/06102 , H01L2224/11462 , H01L2224/13007 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2933/0016 , H01L2933/0066
摘要： A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.
摘要翻译：制造倒装芯片氮化物半导体发光元件的方法包括提供氮化物半导体发光元件结构的步骤; 在所述氮化物半导体发光元件结构上形成绝缘保护层; 形成具有在n侧电极连接表面和p侧电极连接表面上方的开口的抗蚀剂图案; 蚀刻保护层以使用抗蚀剂图案作为掩模使n侧电极连接表面和p侧电极连接表面露出; 形成成为n侧电极和p侧电极的第一金属层，所述第一金属层形成为设置在n侧电极连接面，p侧电极连接面和抗蚀图案上的连续层 ; 通过使用第一金属层作为电解电镀的电极，通过电解电镀形成金属凸块的第二金属层; 并去除抗蚀剂图案。

9. 发明申请

US20130009195A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US20130009195A1
公开(公告)日：2013-01-10
申请号：US13580941
申请日：2011-02-04
申请人： Hirofumi Kawaguchi , Akinori Yoneda , Hiroshi Doi
发明人： Hirofumi Kawaguchi , Akinori Yoneda , Hiroshi Doi
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L33/40 , H01L33/14 , H01L33/32 , H01L33/382
摘要： A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.
摘要翻译：氮化物半导体发光元件具有：第一导电型半导体层，发光层和与第一导电型半导体层的不同导电类型的第二导电型半导体层的层压体; 以及形成在第一导电型半导体层上的层压结构的电极，电极包括具有导电区域和绝缘区域的第一层的导电区域。

10. 发明申请

US20060221253A1 Noise reducing apparatus and noise reducing method 审中-公开
标题翻译：降噪装置和降噪方法
公开(公告)号：US20060221253A1
公开(公告)日：2006-10-05
申请号：US11391686
申请日：2006-03-29
申请人： Noriyuki Kai , Hirofumi Honda , Hirofumi Kawaguchi
发明人： Noriyuki Kai , Hirofumi Honda , Hirofumi Kawaguchi
IPC分类号： H04N5/00 , H04N5/14
CPC分类号： H04N5/21
摘要： The movement of an image between the image information of a current frame and the image information of a frame which is one, two, or three frames prior to the current frame is detected. On the basis of the detection result, a noise reducing process is performed. Moreover, identity between the pixel information of the current frame about a pixel which is currently the target of the process and the pixel information of the current frame or the frame which is one, two, or three frames prior to the current frame about a plurality of pixels located near the target pixel is detected. On the basis of the detection result, the noise reducing process is performed.
摘要翻译：检测当前帧的图像信息与当前帧之前的一帧，两帧或三帧的帧的图像信息之间的图像的移动。在检测结果的基础上，进行噪声降低处理。此外，关于当前处理对象的像素的当前帧的像素信息与当前帧的像素信息或作为当前帧之前的一个，两个或三个帧的帧关于多个的像素信息检测位于目标像素附近的像素。在检测结果的基础上，进行降噪处理。

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