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    • 3. 发明授权
    • Pointer-type electronic clock
    • 指针式电子钟
    • US6002652A
    • 1999-12-14
    • US174
    • 1998-04-06
    • Isamu KobayashiKenji FujitaKenji Shimoda
    • Isamu KobayashiKenji FujitaKenji Shimoda
    • G04C3/14G04C9/00G04B9/00G04B19/04G04B19/24G04F5/00
    • G04C3/14G04C9/00
    • Heretofore, in an electronic clock in which a hand is moved a plurality of divisional times per minute and the hand takes one step for each one minute during a correction, when a pointer is stopped at a point other than an exact minute due to a battery replacement or the like, a time correction has been troublesome. The present invention solves the problem and provides a pointer-type electronic clock which can easily perform the time correction even if the clock is arranged so that a minute hand may be moved a plurality of times per minute. The pointer-type electronic clock has a minute hand that is moved at a plurality of divisional steps per minute in a time display state. The minute hand is moved at one step per minute in a correction state. The pointer-type electronic clock comprises minute hand position adjusting means for allowing the minute hand to be moved onto any one of each minute scale and to be then stopped when the minute hand is stopped or time is corrected. When a reduction of a source voltage or the like causes an hour/minute hand to be stopped, since the hand is always stopped at an exact minute position, the correction of the hour/minute hand due to the battery replacement or the like can be easily accomplished.
    • PCT No.PCT / JP97 / 01727 Sec。 371日期:1998年4月6日 102(e)日期1998年4月6日PCT提交1997年5月23日PCT公布。 公开号WO97 / 45776 日期1997年12月4日迄今为止,在电子时钟中,每分钟一只手移动多个分割时间,并且在校正期间每手一分钟一只手,当指针停止在除精确 由于电池更换等等,时间校正已经很麻烦了。 本发明解决了该问题,并且提供了一种指针式电子时钟,其可以容易地执行时间校正,即使时钟被布置成使得分针可以每分钟多次移动。 指针型电子钟具有在时间显示状态下以每分钟多个分割步长移动的分针。 在校正状态下,分针以每分钟一步的速度移动。 指针型电子钟包括分针指针位置调整装置,用于使分针移动到每一微小刻度中的任何一个刻度上,然后当分针停止或时间被校正时停止。 当源极电压等的降低导致小时/分钟的手停止时,由于手总是在精确的微小位置停止,所以由于电池更换等导致的小时/分针的校正可以是 轻松完成
    • 4. 再颁专利
    • Electronic watch
    • 电子手表
    • USRE41686E1
    • 2010-09-14
    • US09659042
    • 2000-09-07
    • Kenji FujitaIsamu KobayashiKiyotaka IgarashiAkiyoshi Murakami
    • Kenji FujitaIsamu KobayashiKiyotaka IgarashiAkiyoshi Murakami
    • G04B9/00G04B19/04G04C23/00
    • G04C10/04G04C10/00
    • In an electronic watch having an electrical generation means, an electrical power storage means which stores electrical energy generated by the electrical generation means, an oscillator circuit, a control section which operates in response to a clock of the oscillator circuit, and a display section which is controlled by the control section, and which displays the time and also selectively displays a function other than the time, a voltage detection means which detects the voltage of the electrical power storage means and a control section management means which, in response to a detection signal from the voltage detection means controls the operation of the control section are provided, and hysteresis is provided between the operation starting point and operation ending point of the control section, which control such operations as storage of hand positions.
    • 在具有发电装置的电子手表中,存储由发电装置产生的电能的电力存储装置,振荡电路,响应于振荡电路的时钟而动作的控制部,以及显示部, 由控制部控制,并且显示时间,并且还选择性地显示除了时间之外的功能,检测电力存储装置的电压的电压检测装置和响应于检测的控制部管理装置 提供来自电压检测装置的信号控制控制部分的操作,并且在控制部分的操作开始点和操作结束点之间提供滞后,其控制诸如手位置的存储的操作。
    • 5. 发明申请
    • Electronic Clinical Thermometer and Method of Producing the Same
    • 电子临床温度计及其生产方法
    • US20080031305A1
    • 2008-02-07
    • US11663731
    • 2005-09-09
    • Isamu Kobayashi
    • Isamu Kobayashi
    • G01K1/08G01K1/00
    • G01K1/083G01K13/002Y10T29/49085
    • A method of producing an electronic clinical thermometer is disclosed, the electronic clinical thermometer including a temperature-sensitive element, lead wire that is connected to the temperature-sensitive element, a body case having a probe part in which an insertion path for the lead wire to be inserted is formed, and a sensor cap having a cavity one end of which is opened and the other end is closed, both the lead wire projecting from the insertion path and the temperature-sensitive element being stored within the sensor cap, and the method includes a step for mounting the sensor cap on the probe part, in a state where the lead wire having the temperature-sensitive element mounted on the tip thereof projects from the insertion path of the probe part.
    • 公开了一种生产电子体温计的方法,所述电子体温计包括温度敏感元件,连接到所述感温元件的引线,具有探针部的主体壳体,所述探针部的所述引线的插入路径 被形成的传感器盖和具有一端的空腔的传感器盖,另一端封闭,从插入路径突出的引线和存储在传感器盖内的温度敏感元件两者, 方法包括在安装有尖端的温度敏感元件的引线从探针部分的插入路径突出的状态下将传感器盖安装在探针部上的步骤。
    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06472929B2
    • 2002-10-29
    • US09927371
    • 2001-08-13
    • Isamu KobayashiYoshiharu KatoTakahiro Yokoyama
    • Isamu KobayashiYoshiharu KatoTakahiro Yokoyama
    • G05F110
    • G05F3/242
    • A semiconductor device which is capable of shutting off the influence of noise introduced into a reference voltage while preventing an increase in die size. The semiconductor device including a reference potential generator, first and second filter, and first and second input circuit. The reference potential generator generates a reference potential in accordance with a first power supply. The first filter is connected to the first power supply and filters the reference potential to generate a first filtered reference potential. The second filter is connected to a second power supply and filters the reference potential to generate a second filtered reference potential. The first input circuit is connected to the first power supply and receives the first filtered reference potential to generate a first predetermined voltage. The second input circuit is connected to the second power supply and receives the second filtered reference potential to generate a second predetermined voltage.
    • 一种半导体器件,其能够在阻止芯片尺寸增大的同时,切断引入参考电压的噪声的影响。 该半导体器件包括参考电位发生器,第一和第二滤波器以及第一和第二输入电路。 参考电位发生器根据第一电源产生参考电位。 第一滤波器连接到第一电源并对参考电位进行滤波以产生第一滤波参考电位。 第二滤波器连接到第二电源并对参考电势进行滤波以产生第二滤波参考电位。 第一输入电路连接到第一电源并且接收第一滤波参考电位以产生第一预定电压。 第二输入电路连接到第二电源并接收第二滤波参考电位以产生第二预定电压。
    • 9. 发明授权
    • Semiconductor gate array device
    • 半导体门阵列器件
    • US6160275A
    • 2000-12-12
    • US692253
    • 1996-08-05
    • Yoji NishioYasuo KaminagaIsamu KobayashiYoshihiko YamamotoNozomi HorinoKousaku Hirose
    • Yoji NishioYasuo KaminagaIsamu KobayashiYoshihiko YamamotoNozomi HorinoKousaku Hirose
    • H01L27/118H01L27/10
    • H01L27/11807
    • In order to present a basic cell of a master slice type LSI having a high memory density and a high speed logic circuitry, a basic cell is composed of each pair of the PMOS 1, NMOS 4, PMOS 7, and NMOS 10, and three contact holes--besides the contact holes 17, as the contact holes within the MOS channel width W of each MOS, that are connected to the GND power lines 51 and 53, or the Vcc power lines 50 and 52--are formed in the direction perpendicular to each of the power lines. Additionally, in order to present a semiconductor integrated device having a static type RAM that has realized with its simple structure a shortening of the memory cycle, a RAM is constructed by having memory cells, in which each is composed of a pair of transfer MOSFETs, which both of the MOSFETs are turned on during the write-in operation and one of the MOSFETs is turned on during the read-out operation, is located in between a complementary data line and an input/output node that has a complementary relationship with an information storage part comprised by a pair of inverter circuits in which the inputs and outputs are mutually cross-connected. By constructing in this way, it becomes possible to speed up the write-in operation with accuracy by having a complementary write-in signal received from a pair of the complementary lines during the read-out operation, and it becomes possible to obtain read-out signals rapidly and to prevent write-in errors caused by the pre-read-out potential of the data line because the information storage part is connected only to one of the data lines through one of the transfer gates during the read-out operation.
    • 为了呈现具有高存储密度和高速逻辑电路的主片式LSI的基本单元,基本单元由每对PMOS 1,NMOS 4,PMOS 7和NMOS 10组成,并且三个 接触孔 - 除了接触孔17之外,因为连接到GND电源线51和53或Vcc电源线50和52的每个MOS的MOS沟道宽度W内的接触孔形成在垂直方向上 到每个电力线。 此外,为了呈现具有通过其简单结构实现的具有简化结构的静态型RAM的半导体集成器件,缩短了存储器周期,RAM通过具有存储单元构成,其中每个存储单元由一对转移MOSFET组成, 其中两个MOSFET在写入操作期间导通,并且在读出操作期间MOSFET中的一个导通,位于互补数据线与具有互补关系的输入/输出节点之间 信息存储部分由输入和输出相互交叉连接的一对反相器电路组成。 通过以这种方式构造,可以通过在读出操作期间具有从一对互补线接收的互补写入信号来准确地加速写入操作,并且可以获得读取操作, 并且防止由于数据线的预读出电位引起的写入错误,因为信息存储部分在读出操作期间仅通过一个传输门连接到一条数据线。